Y. Toyoda

Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer

H. Amano, I. Akasaki, N. Sawaki, 1986 .

Non-contact temperature measurement of silicon wafers based on the combined use of transmittance and radiance

T. Iuchi, Y. Toyoda, T. Seo, 2014 .

InGaAsP/InP horizontal cavity surface‐emitting lasers radiating in two opposite directions

Y. Toyoda, K. Mutoh, S. Wakabayashi, 1992 .

Characterization of silicon ion-implanted GaN and AlGaN

T. Inada, Y. Toyoda, Tohru Nakamura, 2012 .

Temperature dependence of p-polarized transmittance of a semitransparent silicon wafer and its application to non-contact temperature measurement

T. Iuchi, Y. Toyoda, 2011, SICE Annual Conference 2011.

The Resistivity Change due to ESR of Donor Electrons in P-Doped Silicon at Intermediate Region of Impurity Conduction. I

Y. Toyoda, Y. Hayashi, 1972 .