T. Kashima

发表

Control of Dislocations and Stress in AlGaN on Sapphire Using a Low Temperature Interlayer

H. Amano, I. Akasaki, Nobuaki Hayashi, 1999 .

Correlation between Dislocation Density and the Macroscopic Properties of GaN Grown by Metalorganic Vapor Phase Epitaxy.

H. Ota, H. Amano, I. Akasaki, 1999 .

Stress and Defect Control in GaN Using Low Temperature Interlayers

H. Amano, I. Akasaki, E. Chason, 1998 .

Mass transport and the reduction of threading dislocation in GaN

H. Amano, I. Akasaki, T. Kashima, 2000 .

Realization of crack-free and high-quality thick AlxGa1−xN for UV optoelectronics using low-temperature interlayer

Motoaki Iwaya, Isamu Akasaki, Nobuaki Hayashi, 2000 .

High-Quality AlxGa1−xN Using Low Temperature-Interlayer and its Application to UV Detector

H. Amano, I. Akasaki, A. Hirano, 2000 .

High-Quality Al x Ga 1−x N Using Low Temperature-Interlayer and its Application to UV Detector

H. Amano, A. Hirano, Nobuaki Hayashi, 1999 .

Improvement of Crystalline Quality of Group III Nitrides on Sapphire Using Low Temperature Interlayers

H. Amano, I. Akasaki, Nobuaki Hayashi, 1998 .

Control of crystalline quality of MOVPE-grown GaN and (Al, Ga)N/AlGaN MQW using In-doping and/or N2 carrier gas

H. Amano, I. Akasaki, T. Kashima, 2000 .

Control of strain in GaN using an In doping-induced hardening effect

H. Amano, I. Akasaki, T. Kashima, 2001 .

Structural characterization of Al1−xInxN lattice-matched to GaN

H. Amano, I. Akasaki, T. Kashima, 2000 .