S. Nitta

发表

Control of Dislocations and Stress in AlGaN on Sapphire Using a Low Temperature Interlayer

H. Amano, I. Akasaki, Nobuaki Hayashi, 1999 .

State-of-the-art and prospects for intense red radiation from core–shell InGaN/GaN nanorods

A. N. Smirnov, H. Amano, V. Davydov, 2020, Scientific Reports.

Lattice bow in thick, homoepitaxial GaN layers for vertical power devices

Y. Kumagai, M. Boćkowski, H. Amano, 2020 .

V-shaped dislocations in a GaN epitaxial layer on GaN substrate

M. Boćkowski, H. Amano, A. Tanaka, 2019, AIP Advances.

m‐Plane GaN Schottky Barrier Diodes Fabricated With MOVPE Layer on Several Off‐Angle m‐Plane GaN Substrates

H. Amano, A. Tanaka, S. Nitta, 2018 .

Facet dependence of leakage current and carrier concentration in m‐plane GaN Schottky barrier diode fabricated with MOVPE

H. Amano, S. Nitta, K. Nagamatsu, 2017 .

m-Plane GaInN Light Emitting Diodes Grown on Patterned a-Plane Sapphire Substrates

Naoki Shibata, Yoshiki Saito, Shugo Nitta, 2009 .

Correlation between nanopipes formed from screw dislocations during homoepitaxial growth by metal-organic vapor-phase epitaxy and reverse leakage current in vertical p–n diodes on a free-standing GaN substrates

H. Amano, S. Nitta, S. Usami, 2019, Japanese Journal of Applied Physics.

Correlation between dislocations and leakage current of p-n diodes on a free-standing GaN substrate

H. Amano, Y. Sugawara, Y. Ishikawa, 2018 .

Effect of V/III ratio on the surface morphology and electrical properties of m –plane (101¯0) GaN homoepitaxial layers

H. Amano, S. Bae, S. Nitta, 2017 .

Impact of high-temperature implantation of Mg ions into GaN

H. Amano, S. Chichibu, S. Nitta, 2020, Japanese Journal of Applied Physics.

Suppression of Green Luminescence of Mg‐Ion‐Implanted GaN by Subsequent Implantation of Fluorine Ions at High Temperature

Kevin J. Chen, H. Amano, S. Chichibu, 2020, physica status solidi (b).

Insight into the performance of multi-color InGaN/GaN nanorod light emitting diodes

H. Amano, V. Davydov, M. Pristovsek, 2018, Scientific Reports.

Impact of gate electrode formation process on Al2O3/GaN interface properties and channel mobility

N. Taoka, H. Amano, M. Shimizu, 2021, Applied Physics Express.

Low interface state densities at Al2O3/GaN interfaces formed on vicinal polar and non-polar surfaces

N. Taoka, H. Amano, S. Nitta, 2020 .

Vertical GaN-on-GaN nanowire Schottky barrier diodes by top-down fabrication approach

Kevin J. Chen, H. Amano, Tao Chen, 2021 .

Dielectric Ruduced Surface Field Effect on Vertical GaN-on-GaN Nanowire Schottky Barrier Diodes

Kevin J. Chen, H. Amano, Tao Chen, 2020, 2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD).

Vertical GaN p–n diode with deeply etched mesa and the capability of avalanche breakdown

H. Amano, S. Nitta, S. Usami, 2019, Applied Physics Express.

Deeply and vertically etched butte structure of vertical GaN p–n diode with avalanche capability

H. Amano, S. Nitta, S. Usami, 2019, Japanese Journal of Applied Physics.

Control of strain in GaN by a combination of H2 and N2 carrier gases

H. Amano, I. Akasaki, S. Nitta, 2001 .

Low leakage Mg-compensated GaN Schottky diodes on free-standing GaN substrate for high energy $\alpha$-particle detection

G. Ng, H. Amano, J. Kennedy, 2020, 2020 4th IEEE Electron Devices Technology & Manufacturing Conference (EDTM).

Growth of hexagonal boron nitride on sapphire substrate by pulsed-mode metalorganic vapor phase epitaxy

H. Amano, Ho‐Jun Lee, M. Pristovsek, 2018 .

Interface amorphization in hexagonal boron nitride films on sapphire substrate grown by metalorganic vapor phase epitaxy

H. Amano, M. Pristovsek, S. Nitta, 2018 .

Change of high-voltage conduction mechanism in vertical GaN–on–GaN Schottky diodes at elevated temperatures

G. Ng, H. Amano, S. Nitta, 2020, Applied Physics Express.

Experimental demonstration of GaN IMPATT diode at X-band

H. Amano, M. Arai, S. Nitta, 2021 .

Tungsten carbide layers deposited on graphite substrates via a wet powder process as anti-parasitic-reaction coatings for reactor components in GaN growth

H. Amano, S. Nitta, D. Nakamura, 2020 .

Photoluminescence of InGaN/GaN multiple quantum wells grown by mass transport

J. Bergman, H. Amano, I. Akasaki, 2001 .

Vertical GaN-on-GaN Schottky Diodes as α-Particle Radiation Sensors

N. G. Ing, H. Amano, J. Kennedy, 2020, Micromachines.

Scalable synthesis of multilayer h-BN on AlN by metalorganic vapor phase epitaxy: nucleation and growth mechanism

H. Amano, M. Pristovsek, S. Nitta, 2019, 2D Materials.

Mass transport and the reduction of threading dislocation in GaN

H. Amano, I. Akasaki, T. Kashima, 2000 .

Ohmic contact on low-doping-density p-type GaN with nitrogen-annealed Mg

H. Amano, S. Nitta, Y. Honda, 2021, Applied Physics Letters.

Improved device performance of vertical GaN-on-GaN nanorod Schottky barrier diodes with wet-etching process

Kevin J. Chen, H. Amano, Tao Chen, 2022, Applied Physics Letters.

Metalorganic vapor phase epitaxy growth of crack-free AlN on GaN and its application to high-mobility AlN/GaN superlattices

H. Amano, I. Akasaki, S. Nitta, 2001 .

Optical properties of neodymium ions in nanoscale regions of gallium nitride: erratum

T. Ohshima, A. Greentree, H. Amano, 2020, Optical Materials Express.

An Accurate Approach to Develop Small Signal Circuit Models for AlGaN/GaN HEMTs Using Rational Functions and Dependent Current Sources

A. Wakejima, H. Amano, Sourajeet Roy, 2022, IEEE Journal of the Electron Devices Society.

Tuning the p-type doping of GaN over three orders of magnitude via efficient Mg doping during halide vapor phase epitaxy

H. Amano, S. Nitta, N. Fujimoto, 2022, Journal of Applied Physics.

Decomposition of trimethylgallium and adduct formation in a metalorganic vapor phase epitaxy reactor analyzed by high‐resolution gas monitoring system

H. Amano, S. Nitta, K. Nagamatsu, 2017 .

In-plane GaN/AlGaN heterostructure fabricated by selective mass transport planar technology

H. Amano, I. Akasaki, M. Iwaya, 2002 .

Mass Transport of AlxGa1—xN

S. Kamiyama, H. Amano, I. Akasaki, 2002 .

Photon extraction enhancement of praseodymium ions in gallium nitride nanopillars

T. Ohshima, A. Greentree, H. Amano, 2022, Scientific reports.

Effect of substrate misorientation on the concentration of impurities and surface morphology of an epitaxial GaN layer on N-polar GaN substrate by MOVPE

H. Amano, M. Pristovsek, S. Nitta, 2019, Journal of Crystal Growth.

Direct evidence of Mg diffusion through threading mixed dislocations in GaN p–n diodes and its effect on reverse leakage current

H. Amano, S. Nitta, S. Usami, 2019, Applied Physics Letters.

Optical characterization of InGaN/GaN MQW structures without in phase separation

J. Bergman, H. Amano, I. Akasaki, 2001 .

Epitaxial Combination of 2D Hexagonal Boron Nitride with Single-Crystalline Diamond Substrate.

H. Kawarada, H. Amano, M. Pristovsek, 2020, ACS applied materials & interfaces.

Growth of GaN on ZrB2 substrate by metal-organic vapor phase epitaxy

S. Kamiyama, H. Amano, I. Akasaki, 2003 .

Indium Incorporation into InGaN Quantum Wells Grown on GaN Narrow Stripes

H. Amano, V. Holý, E. Grzanka, 2019, Materials.

Strain relief by In-doping and its effect on the surface and on the interface structures in (Al)GaN on sapphire grown by metalorganic vapor-phase epitaxy

H. Amano, I. Akasaki, S. Nitta, 2000 .

Effect of dislocations on the growth of p‐type GaN and on the characteristics of p–n diodes

A. Tanaka, H. Amano, S. Nitta, 2017 .

Progress in Modeling Compound Semiconductor Epitaxy: Unintentional Doping in GaN MOVPE

K. Shiraishi, H. Amano, Y. Kangawa, 2021 .

Structural properties of InN on GaN grown by metalorganic vapor-phase epitaxy

Isamu Akasaki, Hiroshi Amano, Shugo Nitta, 1999 .

Etching-induced damage in heavily Mg-doped p-type GaN and its suppression by low-bias-power inductively coupled plasma-reactive ion etching

H. Amano, S. Nitta, A. Tanaka, 2021 .

Thermodynamic analysis of the gas phase reaction of Mg-doped GaN growth by HVPE using MgO

K. Shiraishi, H. Amano, M. Araidai, 2020, Japanese Journal of Applied Physics.

Crystal Growth of High‐Quality AlInN/GaN Superlattices and of Crack‐Free AlN on GaN: Their Possibility of High Electron Mobility Transistor

H. Amano, I. Akasaki, Tetsuya Nakamura, 2001 .

Vertical GaN p+-n junction diode with ideal avalanche capability grown by halide vapor phase epitaxy

H. Amano, S. Nitta, N. Fujimoto, 2021, Applied Physics Letters.

Electrical properties and structural defects of p-type GaN layers grown by halide vapor phase epitaxy

H. Amano, S. Nitta, N. Fujimoto, 2021, Journal of Crystal Growth.

Halide vapor phase epitaxy of p-type Mg-doped GaN utilizing MgO

H. Amano, S. Nitta, N. Fujimoto, 2020, Applied Physics Express.

Comparing high-purity c- and m-plane GaN layers for Schottky barrier diodes grown homoepitaxially by metalorganic vapor phase epitaxy

H. Amano, M. Pristovsek, S. Nitta, 2018, Japanese Journal of Applied Physics.

Observation of photoluminescence from Al1−xInxN heteroepitaxial films grown by metalorganic vapor phase epitaxy

H. Amano, I. Akasaki, T. Takeuchi, 1998 .

Morphological study of InGaN on GaN substrate by supersaturation

H. Amano, M. Pristovsek, S. Nitta, 2019, Journal of Crystal Growth.

Insight into the performance of multi-color InGaN/GaN nanorod light emitting diodes

A. N. Smirnov, H. Amano, V. Davydov, 2018, Scientific Reports.

Electrical properties of GaN metal-insulator-semiconductor field-effect transistors with Al2O3/GaN interfaces formed on vicinal Ga-polar and nonpolar surfaces

N. Taoka, H. Amano, S. Nitta, 2020 .

InGaN/GaN multiple quantum wells grown by metalorganic vapor phase epitaxy with mass transport

J. Bergman, H. Amano, I. Akasaki, 2000 .

A-plane GaN growth on (11-20) 4H-SiC substrate with an ultrathin interlayer

H. Amano, S. Nitta, Y. Honda, 2017 .

Defect and Stress Control of Algan and Fabrication of High-Efficiency Uv-Led

S. Kamiyama, H. Amano, I. Akasaki, 2000 .

The Effect of Isoelectronic In-Doping on the Structural and Optical Properties of (Al)GaN Grown by Metalorganic Vapor Phase Epitaxy

H. Amano, I. Akasaki, S. Nitta, 2000 .

Effect on GaN/Al0.17Ga0.83N and Al0.05Ga0.95N/Al0.17Ga0.83N Quantum Wells by Isoelectronic In-Doping during Metalorganic Vapor Phase Epitaxy.

H. Amano, I. Akasaki, S. Nitta, 2000 .

Strain relief and its effect on the properties of GaN using isoelectronic In doping grown by metalorganic vapor phase epitaxy

H. Amano, I. Akasaki, S. Nitta, 1999 .

Crystalline and Electrical Properties of AlInN/GaN and AlN/GaN superlattices on GaN Grown by Metalorganic Vapor Phase Epitaxy

S. Kamiyama, H. Amano, I. Akasaki, 2001 .

Mosaic Structure of Ternary Al 1-xInxN Films on GaN Grown by Metalorganic Vapor Phase Epitaxy

H. Amano, I. Akasaki, S. Nitta, 1999 .

Electrical properties of strained AlN/GaN superlattices on GaN grown by metalorganic vapor phase epitaxy

S. Kamiyama, H. Amano, I. Akasaki, 2002 .

Control of crystalline quality of MOVPE-grown GaN and (Al, Ga)N/AlGaN MQW using In-doping and/or N2 carrier gas

H. Amano, I. Akasaki, T. Kashima, 2000 .

On the Bandstructure in GaInN/GaN Heterostructures - Strain, Band Gap and Piezoelectric Effect

H. Amano, I. Akasaki, T. Takeuchi, 1998 .

Control of strain in GaN using an In doping-induced hardening effect

H. Amano, I. Akasaki, T. Kashima, 2001 .

Narrow Excitonic Lines in Core–Shell Nanorods With InGaN/GaN Quantum Wells Intersected by Basal Stacking Faults

A. N. Smirnov, H. Amano, V. Davydov, 2019, physica status solidi (b).

Localization and transient emission properties in InGaN/GaN quantum wells of different polarities within core-shell nanorods.

A. N. Smirnov, H. Amano, V. Davydov, 2018, Nanoscale.

m-Plane GaN Films Grown on Patterned a-Plane Sapphire Substrates with 3-inch Diameter

Naoki Shibata, Yoshiki Saito, Shugo Nitta, 2009 .

Photoluminescence properties of implanted Praseodymium into Gallium Nitride at elevated temperatures

T. Ohshima, H. Amano, H. Okada, 2020 .

Low Voltage High-Energy α-Particle Detectors by GaN-on-GaN Schottky Diodes with Record-High Charge Collection Efficiency

Hiroshi Amano, Geok Ing Ng, Abhinay Sandupatla, 2019, Sensors.

Computational fluid dynamics simulation study of the gas flow balance in a vertical HVPE reactor with a showerhead for low cost bulk GaN crystal growth

H. Amano, S. Nitta, Qiang Liu, 2019, Japanese Journal of Applied Physics.

Facet-controlled three-step growth of high-quality GaN on sapphire substrates by mass-production-type metalorganic vapor phase epitaxy

Kiyoshi Takahashi, Y. Koyama, S. Nitta, 2004 .

Ammonia decomposition and reaction by high-resolution mass spectrometry for group III – Nitride epitaxial growth

H. Amano, M. Pristovsek, S. Nitta, 2019, Journal of Crystal Growth.

Beyond ab initio reaction simulator: An application to GaN metalorganic vapor phase epitaxy

Y. Kangawa, S. Nitta, A. Kusaba, 2022, Applied Physics Letters.

Analysis of trimethylgallium decomposition by high-resolution mass spectrometry

H. Amano, M. Pristovsek, S. Nitta, 2020, Japanese Journal of Applied Physics.

“Regrowth-free” fabrication of high-current-gain AlGaN/GaN heterojunction bipolar transistor with N-p-n configuration

H. Amano, S. Nitta, A. Tanaka, 2022, Applied Physics Express.

Dependence of DAP Emission Properties on Impurity Concentrations in N-/B-co-doped 6H-SiC

S. Kamiyama, H. Amano, I. Akasaki, 2007 .

Evaluation of excess In during metal organic vapor-phase epitaxy growth of InGaN by monitoring via in situ laser scattering

H. Amano, A. Tamura, S. Nitta, 2016 .

Structural Properties of Nitrides Grown by Omvpe on Sapphire Substrate

H. Amano, I. Akasaki, T. Takeuchi, 1997 .

Anomalous features in the optical properties of Al1−xInxN on GaN grown by metal organic vapor phase epitaxy

Isamu Akasaki, Hiroshi Amano, Shugo Nitta, 2000 .

Structural and optical properties of AlInN and AlGaInN on GaN grown by metalorganic vapor phase epitaxy

H. Amano, I. Akasaki, T. Takeuchi, 1998 .

Improved breakdown voltage in vertical GaN Schottky barrier diodes on free-standing GaN with Mg-compensated drift layer

G. Ng, S. Abhinay, S. Nitta, 2020, Japanese Journal of Applied Physics.

Surface Kinetics in Halide Vapor Phase Epitaxial Growth of Gan Layers on Gan (0001) Freestanding Substrates

H. Amano, S. Nitta, Y. Honda, 2022, SSRN Electronic Journal.

Impacts of off-angle and off-direction on surface morphology of GaN grown by metalorganic vapor phase epitaxy on (0001) GaN substrate

S. Nitta, Y. Honda, Y. Ando, 2023, Journal of Crystal Growth.

High In content nitride sub-micrometer platelet arrays for long wavelength optical applications

H. Amano, Yutaka Furusawa, M. Pristovsek, 2022, Applied Physics Letters.

MOVPE growth and characterization of Al1−xInxN/GaN multiple layers

H. Amano, I. Akasaki, Tetsuya Nakamura, 2002 .

Structural characterization of Al1−xInxN lattice-matched to GaN

H. Amano, I. Akasaki, T. Kashima, 2000 .

Structural Properties of Al 1- xIn xN Ternary Alloys on GaN Grown by Metalorganic Vapor Phase Epitaxy

H. Amano, I. Akasaki, T. Takeuchi, 1998 .