C. Wetzel

H. Amano, I. Akasaki, C. Wetzel, 1998, Compound Semiconductors 1997. Proceedings of the IEEE Twenty-Fourth International Symposium on Compound Semiconductors.

Dynamics of bound-exciton luminescences from epitaxial GaN

B. Meyer, R. Heitz, C. Wetzel, 1996 .

Quantitative Chemical Mapping of InGaN Quantum Wells from Calibrated High-Angle Annular Dark Field Micrographs

F. M. Morales, E. Alves, T. Ben, 2015, Microscopy and Microanalysis.

INTEGRATION OF N- AND P-CONTACTS TO GaN-BASED LIGHT EMITTING DIODES

C. Wetzel, T. Detchprohm, W. Hou, 2011 .

Junction temperature analysis in green light emitting diode dies on sapphire and GaN substrates

Theeradetch Detchprohm, Joel L. Plawsky, Christian Wetzel, 2008 .

Piezoelectric Polarization in GaInN/GaN Heterostructures and Some Consequences for Device Design

H. Amano, I. Akasaki, C. Wetzel, 2000 .

Junction Temperature Measurements and Thermal Modeling of GaInN/GaN Quantum Well Light-Emitting Diodes

Theeradetch Detchprohm, Joel L. Plawsky, Mingwei Zhu, 2008 .

Junction temperature, spectral shift, and efficiency in GaInN-based blue and green light emitting diodes

Theeradetch Detchprohm, Joel L. Plawsky, Christian Wetzel, 2010 .

High Quality Interfaces in a-Si:H/a-Sic:H Superlattices

C. Wetzel, N. Bernhard, R. Schwarz, 1990 .

Very strong nonlinear optical absorption in green GaInN/GaN multiple quantum well structures

C. Wetzel, J. Senawiratne, T. Detchprohm, 2008 .

Superluminescence in Green Emission GaInN/GaN Quantum Well Structures under Pulsed Laser Excitation

S. Tomasulo, C. Wetzel, J. Senawiratne, 2007 .

Optical transitions in piezoelectrically polarized GaInN/GaN quantum wells

S. Kamiyama, J. Nelson, H. Amano, 2002 .

Absorption spectroscopy and band structure in polarized GaN/AlxGa1-xN quantum wells

H. Amano, I. Akasaki, C. Wetzel, 2001 .

Antimicrobial effects and dissolution properties of silver copper mixed layers

C. Wetzel, G. Gotzmann, C. Jorsch, 2017 .

Final LDRD Report: Nanoengineering for Solid-State Lighting

S. Report, Shawn-Yu Lin, E. Schubert, 2009 .

High temperature characteristics of monolithically integrated LED and MOS‐channel HEMT in GaN using selective epi removal

R. F. Karlicek, T. Chow, J. Waldron, 2015 .

Radiation damage mechanisms for luminescence in Eu-doped GaN

C. G. Stevens, J. Morse, T. Felter, 2005 .

The conduction band spin splitting in type-I strained and unstrained (GaIn)As/InP quantum wells

V. Härle, B. Meyer, F. Scholz, 1994 .

UV light emitter on bulk semipolar (11–22) GaN

K. Evans, C. Wetzel, T. Detchprohm, 2011, CLEO: 2011 - Laser Science to Photonic Applications.

Composition dependence of the in‐plane effective mass in lattice‐mismatched, strained Ga1−xInxAs/InP single quantum wells

H. Linke, V. Härle, P. Sobkowicz, 1993 .

Localized Donors in Gan: Spectroscopy Using Large Pressures

E. Haller, H. Amano, I. Akasaki, 1997 .

Loss of Quantum Efficiency in Green Light Emitting Diode Dies at Low Temperature

E. Schubert, C. Wetzel, J. Senawiratne, 2006 .

Quality assessment of corneal storage media and their components

C. Wetzel, R. Funk, K. Engelmann, 2013, Graefe's Archive for Clinical and Experimental Ophthalmology.

Piezoelectric Level Splitting in GaInN/GaN Quantum Wells

H. Amano, I. Akasaki, T. Takeuchi, 1998 .

Elastic Variation of Quasi-One-Dimensional Cubic-Phase GaN at Nanoscale

E. Peterson, C. Wetzel, S. Brueck, 2019, Crystal Growth & Design.

Stabilization and Sterilization of Pericardial Scaffolds by Ultraviolet and Low-Energy Electron Irradiation

S. Tugtekin, M. Hacker, M. Schulz-Siegmund, 2018, Tissue engineering. Part C, Methods.

Surface modification of polyurethane and silicone for therapeutic medical technics by means of electron beam

C. Wetzel, R. Funk, Jessy Schönfelder, 2010 .

Ultrasensitive tunability of the direct bandgap of 2D InSe flakes via strain engineering

S. Louie, Y. Li, Cheng‐Yan Xu, 2018, 1801.07538.

Exploring swift-heavy ion irradiation of InGaN/GaN multiple quantum wells for green-emitters: the use of Raman and photoluminescence to assess the irradiation effects on the optical and structural properties

T. Monteiro, C. Wetzel, M. Correia, 2021, Journal of Materials Chemistry C.

Biological relevance of ion energy in performance of human endothelial cells on ion-implanted flexible polyurethane surfaces.

C. Wetzel, R. Funk, E. Richter, 2009, Journal of biomedical materials research. Part A.

Optimization of High-Quality AlN Epitaxially Grown on (0001) Sapphire by Metal-Organic Vapor-Phase Epitaxy

Y. Xi, F. Mont, J. Smart, 2007 .

X-Ray Photoelectron Diffraction Measurements of Hexagonal GaN(0004) Thin Films

E. Haller, J. Liesegang, C. Fadley, 1997 .

Communicating Two States in Perovskite Revealed by Time-Resolved Photoluminescence Spectroscopy

T. Ye, Hanying Li, Sufei Shi, 2018, Scientific Reports.

Determination of piezoelectric fields in strained GaInN quantum wells using the quantum-confined Stark effect

Shigeru Nakagawa, Isamu Akasaki, Hiroshi Amano, 1998 .

Structural properties of InN on GaN grown by metalorganic vapor-phase epitaxy

Isamu Akasaki, Hiroshi Amano, Shugo Nitta, 1999 .

Optical band gap in Ga1−xInxN (0

Isamu Akasaki, Hiroshi Amano, Christian Wetzel, 1998 .

Application of microwave detection of the Shubnikov–de Haas effect in two‐dimensional systems

H. Linke, P. Ramvall, B. Meyer, 1993 .

Temperature dependence of the quantum efficiency in green light emitting diode dies

E. Schubert, C. Wetzel, J. Senawiratne, 2007 .

Infrared reflection of GaN and AlGaN thin film heterostructures with AlN buffer layers

Eugene E. Haller, Isamu Akasaki, Hiroshi Amano, 1996 .

Investigation on zirconium-coated polyurethane surfaces with regard to biocompatibility

N. Özkucur, C. Wetzel, R. Funk, 2008 .

PRESSURE INDUCED DEEP GAP STATE OF OXYGEN IN GAN

E. Haller, J. Ager, R. Molnar, 1997 .

Enhanced Light Emission from the Ridge of Two-Dimensional InSe Flakes.

Shengbai Zhang, Cheng‐Yan Xu, R. Sankar, 2018, Nano letters.

Properties of GaN grown at high rates on sapphire and on 6H–SiC

Eugene E. Haller, Christian Wetzel, W. L. Hansen, 1996 .

Light-emitting diode development on polar and non-polar GaN substrates

Edward A. Preble, Theeradetch Detchprohm, Peter D. Persans, 2008 .

Optimization of green and deep green GaInN/GaN light emitting diodes for homogeneity

C. Wetzel, T. Detchprohm, J. Nelson, 2005 .

Observation of photoluminescence from Al1−xInxN heteroepitaxial films grown by metalorganic vapor phase epitaxy

H. Amano, I. Akasaki, T. Takeuchi, 1998 .

Reduction of Etch Pit Density in Organometallic Vapor Phase Epitaxy-Grown GaN on Sapphire by Insertion of a Low-Temperature-Deposited Buffer Layer between High-Temperature-Grown GaN

Motoaki Iwaya, Isamu Akasaki, Hiroshi Amano, 1998 .

Current and optical low-frequency noise of GaInN/GaN green light emitting diodes

Michael S. Shur, Christian Wetzel, Sergey L. Rumyantsev, 2007, SPIE International Symposium on Fluctuations and Noise.

Wavelength-resolved low-frequency noise of GaInN/GaN green light emitting diodes

Michael S. Shur, Sergey L. Rumyantsev, Christian Wetzel, 2006 .

Inclined dislocation-pair relaxation mechanism in homoepitaxial green GaInN/GaN light-emitting diodes

C. Wetzel, T. Detchprohm, S. You, 2010 .

Electric Fields in Polarized GaInN / GaN heterostructures 2

H. Amano, I. Akasaki, T. Takeuchi, 2003 .

Physical vapor deposition of zirconium or titanium thin films on flexible polyurethane highly support adhesion and physiology of human endothelial cells.

C. Wetzel, R. Funk, E. Richter, 2008, Journal of biomedical materials research. Part A.

Quantized states in Ga 1 − x In x N / GaN heterostructures and the model of polarized homogeneous quantum wells

Isamu Akasaki, Christian Wetzel, Tetsuya Takeuchi, 2000 .

Green light emitting diodes on a-plane GaN bulk substrates

Edward A. Preble, Theeradetch Detchprohm, Christian Wetzel, 2008 .

GaN On 6H-SiC – Structural And Optical Properties

B. Meyer, C. Wetzel, K. Pressel, 1994 .

GaN epitaxial layers grown on 6H‐SiC by the sublimation sandwich technique

K. Pressel, Christian Wetzel, Bruno K. Meyer, 1994 .

Optical investigation of deep defects in GaN epitaxial layers grown on 6H-SiC

B. Meyer, R. Heitz, C. Wetzel, 1996 .

Time Resolved Photoluminescence Spectroscopy on GaN Epitaxial Layers

J. Pankove, B. Meyer, R. Heitz, 1995 .

Defect and Stress Control of Algan and Fabrication of High-Efficiency Uv-Led

S. Kamiyama, H. Amano, I. Akasaki, 2000 .

Improvement of Crystalline Quality of Group III Nitrides on Sapphire Using Low Temperature Interlayers

H. Amano, I. Akasaki, Nobuaki Hayashi, 1998 .

Fine Structure of the 3.42 eV Emission Band in GaN

Eugene E. Haller, W. Walukiewicz, Christian Wetzel, 1995 .

Piezoelectric Franz-Keldysh effect in strained GaInN/GaN heterostructures

Isamu Akasaki, Hiroshi Amano, Christian Wetzel, 1999 .

Optical properties of GaInN/GaN heterostructures and quantum wells

I. Akasaki, C. Wetzel, H. Amano, 1998, Semiconducting and Insulating Materials 1998. Proceedings of the 10th Conference on Semiconducting and Insulating Materials (SIMC-X) (Cat. No.98CH36159).

On the Bandstructure in GaInN/GaN Heterostructures - Strain, Band Gap and Piezoelectric Effect

H. Amano, I. Akasaki, T. Takeuchi, 1998 .

Piezoelectric Quantization in GaInN thin Films and Multiple Quantum Well Structures

H. Amano, I. Akasaki, T. Takeuchi, 1998 .

Very high quality AlN grown on (0001) sapphire by metal-organic vapor phase epitaxy

Y. Xi, J. Kim, F. Mont, 2006 .

Recombination dynamics in strained In1-xGaxAs/InP-quantum well structures

A. Kohl, V. Härle, B. Meyer, 1994 .

Electron-phonon scattering in Si doped GaN

J. Ager, W. Walukiewicz, C. Wetzel, 1996 .

PHOTOLUMINESCENCE STUDIES OF GaN AND AlGaN LAYERS UNDER HYDROSTATIC PRESSURE

E. Haller, H. Amano, I. Akasaki, 1995 .