R. S. Kern

发表

A quasicontinuous wave, optically pumped violet vertical cavity surface emitting laser

F. Kish, C. Kuo, A. Nurmikko, 2000 .

Effect of Si doping on strain, cracking, and microstructure in GaN thin films grown by metalorganic chemical vapor deposition

Joel W. Ager, C. Walle, L. Romano, 2000 .

Dislocation reduction in GaN thin films via lateral overgrowth from trenches

Richard P. Schneider, C. P. Kuo, Shih-Yuan Wang, 1999 .

Optically Pumped Quasi‐Continuous Wave Violet Vertical Cavity Surface Emitting Lasers

Yoon-Kyu Song, Richard P. Schneider, Arto V. Nurmikko, 2000 .

Real‐time assessment of overlayer removal on GaN, AlN, and AlGaN surfaces using spectroscopic ellipsometry

R. Davis, D. Aspnes, R. S. Kern, 1996 .

High-power AlGaInN flip-chip light-emitting diodes

Michael R. Krames, S. A. Stockman, Paul S. Martin, 2001 .

Recombination dynamics in InGaN quantum wells

Yoon-Kyu Song, Arto V. Nurmikko, C. P. Kuo, 1996 .

Hall-effect characterization of III–V nitride semiconductors for high efficiency light emitting diodes

Robert M. Fletcher, R. Fletcher, D. Steigerwald, 1999 .

Performance of high-power AlInGaN light emitting diodes

S. A. Stockman, Paul S. Martin, Nathan F. Gardner, 2001 .

A vertical injection blue light emitting diode in substrate separated InGaN heterostructures

Yoon-Kyu Song, Arto V. Nurmikko, Michael R. Krames, 1999 .

Layer-by-layer growth of SiC at low temperatures

R. Davis, L. Rowland, Satoru Tanaka, 1993 .

Chapter 3 High-Brightness Nitride-Based Visible-Light-Emitting Diodes

R. Fletcher, C. Kuo, W. Götz, 1999 .

Low resistance Al/Ti/n-GaN ohmic contacts with improved surface morphology and thermal stability

J. Kwak, S. Mohney, R. S. Kern, 2000 .

TiN and ZrN based ohmic contacts to n-GaN

R. F. Karlicek, T. Jackson, S. Mohney, 1998, 1998 Fourth International High Temperature Electronics Conference. HITEC (Cat. No.98EX145).

Deposition and doping of silicon carbide by gas-source molecular beam epitaxy

R. Davis, R. S. Kern, 1997 .

Electrical characteristics of metal/AlN/n‐type 6H–SiC(0001) heterostructures

R. Davis, Satoru Tanaka, R. S. Kern, 1996 .

Aluminum nitride/silicon carbide multilayer heterostructure produced by plasma‐assisted, gas‐source molecular beam epitaxy

R. Davis, L. Rowland, Satoru Tanaka, 1993 .

Chemical Vapor Cleaning of 6H‐SiC Surfaces

R. Davis, R. Nemanich, S. King, 1999 .

Vicinal and on-axis surfaces of 6H-SiC(0001) thin films observed by scanning tunneling microscopy

R. Davis, Satoru Tanaka, J. Wendelken, 1996 .

Effects of gas flow ratio on silicon carbide thin film growth mode and polytype formation during gas-source molecular beam epitaxy

R. Davis, Satoru Tanaka, R. S. Kern, 1994 .

Gas-source molecular beam epitaxy of monocrystalline β–SiC on vicinal α(6H)–SiC

R. Davis, L. Rowland, Satoru Tanaka, 1993 .

An investigation into the early stages of oxide growth on gallium nitride

C. Kuo, S. Mohney, S. Wolter, 2000 .

Properties of the Heteroepitaxial AIN/SiC Interface

R. Davis, R. Nemanich, R. S. Kern, 1994 .

Growth of AlN and GaN thin films via OMVPE and gas source MBE and their characterization

R. Davis, Satoru Tanaka, R. S. Kern, 1997 .

In-Plane Optical Anisotropies of Al x Ga 1-x N films in their Regions of Transparency

R. Davis, D. Aspnes, R. S. Kern, 1996 .

Issues and Examples Regarding Growth of AlN, GaN and Al x Ga 1−x N Thin Films via OMVPE and Gas Source MBE

R. Davis, Satoru Tanaka, R. S. Kern, 1995 .

Initial Stages of Growth of Thin Films of III-V Nitrides and Silicon Carbide Polytypes by Molecular Beam Epitaxy

R. Davis, Satoru Tanaka, R. S. Kern, 1994 .

Aluminum nitride-silicon carbide solid solutions grown by plasma-assisted, gas-source molecular beam epitaxy

R. Davis, L. Rowland, Satoru Tanaka, 1998 .

Solid solutions of AlN and SiC grown by plasma-assisted, gas-source molecular beam epitaxy

R. Davis, L. Rowland, Satoru Tanaka, 1993 .

III–V Nitride semiconductors for high-performance blue and green light-emitting devices

Serge Rudaz, R. Fletcher, D. Steigerwald, 1997 .

INITIAL STAGE OF ALUMINUM NITRIDE FILM GROWTH ON 6H-SILICON CARBIDE BY PLASMA-ASSISTED, GAS-SOURCE MOLECULAR BEAM EPITAXY

Robert F. Davis, R. Scott Kern, Satoru Tanaka, 1995 .

Epitaxial growth of AlN by plasma-assisted, gas-source molecular beam epitaxy

R. Davis, L. Rowland, R. S. Kern, 1993 .

Growth of highly (0001)-oriented aluminum nitride thin films with smooth surfaces on silicon carbide by gas-source molecular beam epitaxy☆

Scott A. Smith, R. Davis, T. Zheleva, 1998 .

Growth and doping via gas-source molecular beam epitaxy of SiC and heterostructures and their microstructural and electrical characterization

R. Davis, Satoru Tanaka, K. Järrendahl, 1997 .

Gas-source molecular beam epitaxy of III–V nitrides

M. Paisley, R. Davis, K. Linthicum, 1997 .

Growth of SiC and III–V nitride thin films via gas-source molecular beam epitaxy and their characterization

R. Davis, L. Rowland, Satoru Tanaka, 1996 .

A VERTICAL CAVITY LIGHT EMITTING INGAN QUANTUM WELL HETEROSTRUCTURE

F. Kish, I. Ozden, A. Nurmikko, 1999 .

Reaction kinetics of silicon carbide deposition by gas-source molecular-beam epitaxy

R. Davis, L. Rowland, Satoru Tanaka, 1998 .

High-brightness AlGaInN light-emitting diodes

Richard P. Schneider, Richard Mann, Ghulam Hasnain, 2000, Photonics West - Optoelectronic Materials and Devices.

Effect of Si doping on the strain and defect structure of GaN thin films

C. Walle, L. Romano, W. Götz, 1999 .

Recent advances in the growth, doping and characterization of III–V nitride thin films

R. Davis, Satoru Tanaka, R. S. Kern, 1996 .

Microstructural evolution and defect formation during the initial stages of the growth of silicon carbide and aluminum nitride on α(6H)-SiC(0001) substrates

R. Davis, Satoru Tanaka, R. S. Kern, 1996 .

Homoepitaxial SiC Growth by Molecular Beam Epitaxy

R. Davis, Satoru Tanaka, K. Järrendahl, 1997 .