G. Yang

发表

Lateral current spreading in GaN-based light-emitting diodes utilizing tunnel contact junctions

S. Jeon, Y. Song, H. Jang, 2001 .

Ultralow threshold current vertical-cavity surface-emitting lasers obtained with selective oxidation

P. Dapkus, M. MacDougal, G. Yang, 1995 .

Selective etching of AlGaAs/GaAs structures using the solutions of citric acid/H2O2 and de-ionized H2O/buffered oxide etch

Jong-hee Kim, G. Yang, D. Lim, 1998 .

Effects of current spreading under oxide current aperture in vertical‐cavity surface‐emitting lasers

P. Dapkus, M. MacDougal, G. Yang, 1996 .

TEMPERATURE AND EMISSION ANGLE DEPENDENCE OF PHOTOLUMINESCENCE FROM AN INGAAS/GAAS QUANTUM WELL IN A MICROCAVITY STRUCTURE

G. Yang, D. Lim, K. Lim, 1998 .

Enhanced luminous efficacy in phosphor-converted white vertical light-emitting diodes using low index layer.

J. Baek, J. Ha, S. Jeon, 2013, Optics express.

Ultralow threshold current lasers

P. Dapkus, M. MacDougal, Chao-Kun Lin, 1996, Summaries of papers presented at the Conference on Lasers and Electro-Optics.

Self-organized growth of InGaAs/GaAs/AlGaAs quantum dot heterostructures by metalorganic chemical vapor deposition

E. Suh, G. Yang, D. Lim, 1998 .

Growth and characterization of GaN thin films on Si(111) substrates using SiC intermediate layer

W. Lee, E. Suh, K. Nahm, 1999 .

Wavelength Tuning of Vertical-Cavity Surface-Emitting Lasers by an Internal Device Heater

Ho-Jin Jang, Y. Song, G. Sung, 2008, IEEE Photonics Technology Letters.

Characteristics of Wavelength Tunable Vertical-Cavity Surface-Emitting Laser Using Mesa Heater for Detecting Application

G. Sung, Y. Song, H. Jang, 2009 .

Polarization-Stable Single-Mode Tunable VCSELs Using an Internal Mesa Heater

Y. Song, H. Jang, G. Yang, 2009, IEEE Photonics Technology Letters.

Comparative analysis of characteristics of Si, Mg, and undoped GaN

C. S. Oh, W. Lee, E. Suh, 2000 .

Microcavity effects on the spontaneous emission from InGaAs/GaAs quantum wells

P. Dapkus, M. MacDougal, G. Yang, 1995 .

Delta-Doping of Si in GaN by Metalorganic Chemical Vapor Deposition

Hyung Jae Lee, Jong-hee Kim, G. Yang, 1999 .

Microstructural characterization of InGaN/GaN multiple quantum wells with high indium composition

Jeong Yong Lee, C. Humphreys, Nikhil Sharma, 2001 .

GaN-based light-emitting diodes using tunnel junctions

M. S. Cho, S. Jeon, G. Yang, 2002 .

Photoluminescence characterization of biaxial tensile strained GaAs

E. Suh, Hyung Jae Lee, G. Yang, 1997 .

Phase separation and stacking fault of InxGa1−xN layers grown on thick GaN and sapphire substrate by metalorganic chemical vapor deposition

Jeongyong Lee, G. Yang, H. K. Cho, 2000 .

Structural properties of Si and Mg doped and undoped Al0.13Ga0.87N layers grown by metalorganic chemical vapor deposition

S. Jeon, G. Yang, H. K. Cho, 2001 .

Superlattice-like stacking fault and phase separation of InxGa1−xN grown on sapphire substrate by metalorganic chemical vapor deposition

K. Kim, G. Yang, H. K. Cho, 2000 .

Thermal treatment effect of the GaN buffer layer on the photoluminescence characteristics of the GaN epilayer

E. Suh, G. Yang, Ju-Jin Kim, 1999 .

Formation mechanism of V defects in the InGaN/GaN multiple quantum wells grown on GaN layers with low threading dislocation density

Jeongyong Lee, G. Yang, H. Cho, 2001 .

Enhanced optical output power by the silver localized surface plasmon coupling through side facets of micro-hole patterned InGaN/GaN light-emitting diodes.

Ah Hyun Park, E. Suh, T. Cuong, 2014, Optics express.

Effect of buffer layers and stacking faults on the reduction of threading dislocation density in GaN overlayers grown by metalorganic chemical vapor deposition

G. Yang, Kisoo Kim, P. W. Yu, 2001 .

Al concentration control of epitaxial AlGaN alloys and interface control of GaN/AlGaN quantum well structures

Jong-hee Kim, G. Yang, K. Lim, 2000 .

Selective Oxidation of AlGaAs/GaAs Structure and Its Application to Vertical Cavity Lasers

Jong-Hee Kim, Kee Young Lim, Hyung Jae Lee, 1998 .

GaN tunnel junction as a current aperture in a blue surface-emitting light-emitting diode

C. S. Oh, J. Yang, S. Jeon, 2002 .

ANALYSIS OF GAAS PROPERTIES UNDER BIAXIAL TENSILE STRESS

G. Yang, Kisoo Kim, H. Lee, 1998 .

Effect of Al‐rich surface on Se δ‐doped GaAs grown by low‐pressure metalorganic chemical vapor deposition

Y. Shin, G. Yang, D. Lim, 1996 .

Submilliampere threshold current InGaAs-GaAs-AlGaAs lasers and laser arrays grown on nonplanar substrates

M. H. MacDougal, P. D. Dapkus, K. Uppal, 1995 .

Generation of misfit dislocations in high indium content InGaN layer grown on GaN

G. Yang, H. Cho, 2002 .

Observation of inversion domain boundaries in Mg-doped AlGaN layers grown by metalorganic chemical vapor deposition

G. Yang, H. Cho, 2002 .

Influence of Mg doping on structural defects in AlGaN layers grown by metalorganic chemical vapor deposition

S. Jeon, G. Yang, H. Cho, 2001 .

Microstructural Defects in Mg-doped AlGaN Layers Grown by Metalorganic Chemical Vapor Deposition

G. Yang, H. Cho, 2002 .

Conductive layer near the GaN/sapphire interface and its effect on electron transport in unintentionally doped n-type GaN epilayers

C. S. Oh, M. G. Cheong, E. Suh, 2000 .

Growth of crack‐free GaN films on Si(111) substrate and improvement of the crystalline quality using SixNy inserting layer

G. Yang, Tae Ki Kim, K. Lim, 2005 .

GaN-Based Light-Emitting Diodes on Micro-Lens Patterned Sapphire Substrate

E. Suh, G. Yang, Tae Ki Kim, 2008 .

An improvement of light extraction efficiency for GaN-based light emitting diodes by selective etched nanorods in periodic microholes.

Hyun Ho Park, Mun Seok Jeong, Gye Mo Yang, 2013, Optics express.

Effects of growth rate of a GaN buffer layer on the properties of GaN on a sapphire substrate

C. S. Oh, A. Yoshikawa, G. Yang, 1999 .

Improved Light Extraction of GaN-Based Light-Emitting Diodes by an Ion-Damaged Current Blocking Layer

G. Yang, Seunghwan Kim, WoogKim Sun, 2012 .

Effect of growth interruptions on the light emission and indium clustering of InGaN/GaN multiple quantum wells

C. Humphreys, N. Sharma, G. Yang, 2001 .

Investigation of properties of InGaN-based vertical-type solar cells with emission wavelengths in ultraviolet-blue-green regions

Hyun Ho Park, Dong Sun Lee, Seong Ran Jeon, 2014 .

The study on the growth and properties of Mg doped and Mg Si codoped p-type GaN

G. Yang, H. Lee, Ki Soo Kim, 1999 .

Structural and optical investigation of InGaN/GaN multiple quantum well structures with various indium compositions

Gye Mo Yang, Jeong Yong Lee, G. Yang, 2001 .

Codoping characteristics of Zn with Mg in GaN

Junyeong Lee, Gye Mo Yang, C. J. Youn, 2000 .

Large bandgap bowing of InxGa1–xN films and growth of blue/green InxGa1–xN/GaN MQWs on highly tensile strained GaN/Si(111) hetero structures

G. Yang, Tae Ki Kim, K. Lim, 2006 .

Solid Incorporation of AlGaN and Influence of Growth Interruption on GaN/AlGaN Quantum Well Structures Grown by MOCVD

G. Yang, Ju-Jin Kim, Sang-Sik Choi, 1999 .

Enhancement of Light Extraction from GaN-Based Light-Emitting Diodes by Coating Surface with Al2O3 Powder

G. Yang, Tae Ki Kim, J. Son, 2009 .