K. Arai

发表

Characterization of Electric Discharge Machining for Silicon Carbide Single Crystal

Hideaki Takahashi, S. Yamaguchi, Tomohisa Kato, 2008 .

Liquid-phase epitaxy on 6H-SiC Acheson seed crystals in closed vessel

W. Bahng, K. Arai, M. Khan, 2000 .

Aluminum or phosphorus co‐doping effects on the fluorescence and structural properties of neodymium‐doped silica glass

Takashi Handa, Kazuo Arai, Tatsutoku Honda, 1986 .

Nature of doping into pure silica glass by plasma torch CVD

H. Imai, H. Hosono, H. Namikawa, 1987 .

Fluorescence and its Nd3+ Concentration Dependence of Nd-Doped SiO2 Glasses Prepared by Plasma Torch CVD

Kazuo Arai, H. Namikawa, K. Arai, 1983 .

Ohmic Contacts for Power Devices on SiC

S. Tanimoto, Kazuo Arai, H. Okushi, 2004 .

Generation of E' centers and oxygen hole centers in synthetic silica glasses by γ irradiation

H. Imai, H. Hosono, J. Isoya, 1993 .

Preparation of Cerium-Activated Silica Glasses: Phosphorus and Aluminum Codoping Effects on Absorption and Fluorescence Properties.

A. Negishi, H. Namikawa, K. Arai, 1987 .

Influence of Processing and of Material Defects on the Electrical Characteristics of SiC-SBDs and SiC-MOSFETs

K. Fukuda, T. Yatsuo, T. Hatakeyama, 2010 .

Two‐photon processes in defect formation by excimer lasers in synthetic silica glass

Hideo Hosono, Hiroaki Imai, Yoshihiro Abe, 1988 .

Defect formation observed by AES in a-SiO2 films prepared by photochemical vapour deposition

H. Nonaka, S. Ichimura, K. Arai, 1990 .

Influences of postimplantation annealing conditions on resistance lowering in high-phosphorus-implanted 4H–SiC

K. Fukuda, J. Senzaki, K. Arai, 2003 .

Growth of homoepitaxial YBa2Cu3O7 − x films by molecular beam epitaxy

H. Nonaka, K. Arai, Takashi Shimizu, 1996 .

Lattice orientation of microcrystallites in μc-Si:H

A. Matsuda, K. Arai, Y. Toyoshima, 1989 .

High Temperature Rapid Thermal Oxidation and Nitridation of 4H-SiC in Diluted N2O and NO Ambient

K. Fukuda, K. Arai, R. Kosugi, 2005 .

Real‐time detection of higher hydrides on the growing surface of hydrogenated amorphous silicon by infrared reflection absorption spectroscopy

A. Matsuda, Kazunobu Tanaka, K. Arai, 1990 .

Homoepitaxial Growth on a 4H‐SiC C‐Face Substrate

K. Kojima, H. Okumura, K. Arai, 2006 .

Homoepitaxial growth of 4H-SiC on on-axis (0001) C-face substrates by chemical vapor depositon

K. Kojima, H. Okumura, K. Arai, 2004 .

Silicon carbide epitaxial layer growths on Acheson seed crystals from silicon melt

Tomohisa Kato, K. Arai, M. Khan, 2002 .

Effect of oxidation method and post-oxidation annealing on interface properties of metal–oxide–semiconductor structures formed on n-type 4H-SiC C(0001̄) face

W. Cho, K. Fukuda, J. Senzaki, 2000 .

ESR in GeS glasses

H. Namikawa, K. Arai, 1973 .

A Formation of SiO 2 /4H-SiC Interface by Oxidizing Deposited Poly-Si and High Temperature Hydrogen Annealing

T. Sekigawa, K. Fukuda, K. Arai, 1999 .

Response to “Comment on ‘Reduction of interface-state density in 4H–SiC n-type metal–oxide–semiconductor structures using high-temperature hydrogen annealing’ ” [Appl. Phys. Lett. 78, 4043 (2001)]

K. Fukuda, K. Arai, Seiji Suzuki, 2001 .

Development of a Practical High-Rate CVD System

H. Okumura, Tetsuo Takahashi, Y. Ishida, 2008 .

Effect of Reduced Pressure on 3C‐SiC Heteroepitaxial Growth on Si by CVD

H. Okumura, Tetsuo Takahashi, Y. Ishida, 2006 .

Rapid Oxidation of SiC Using Highly Concentrated Ozone and Characterization of Oxide Films

K. Fukuda, H. Nonaka, S. Ichimura, 2008 .

Influence of growth conditions on basal plane dislocation in 4H-SiC epitaxial layer

K. Kojima, H. Yamaguchi, K. Arai, 2004 .

High Throughput SiC Wafer Polishing with Good Surface Morphology

Tomohisa Kato, K. Arai, S. Nishizawa, 2007 .

High channel mobility in normally-off 4H-SiC buried channel MOSFETs

K. Adachi, K. Fukuda, S. Harada, 2001, IEEE Electron Device Letters.

Preparation of Cerium‐Activated Silica Glasses: Phosphorus and Aluminum Codoping Effects on Absorption and Fluorescence Properties

A. Negishi, H. Namikawa, K. Arai, 1987 .

Healing defects in SiC wafers by liquid-phase epitaxy in Si melts

K. Arai, M. Khan, S. Nishizawa, 2003 .

Fabrication of Mesa-Type pn Diodes without Forward Degradation on Ultra-High-Quality 6H-SiC Substrate

K. Fukuda, T. Yatsuo, Yasunori Tanaka, 2004 .

Study on electron trapping and interface states of various gate dielectric materials in 4H–SiC metal-oxide-semiconductor capacitors

W. Cho, K. Fukuda, J. Senzaki, 2000 .

In situ x-ray topography of silicon carbide during crystal growth by sublimation method

W. Bahng, Tomohisa Kato, H. Yamaguchi, 2000 .

Effect of growth condition on micropipe filling of 4H-SiC epitaxial layer

K. Kojima, H. Okumura, K. Arai, 2005 .

Breakdown Electric Field in 4H-SiC Epitaxial Layer Grown on Various Net-Doping Substrates

H. Okushi, T. Yatsuo, T. Shinohe, 2003 .

Fabrication of 4H-SiC Double-Epitaxial MOSFETs

Kenji Suzuki, K. Fukuda, T. Yatsuo, 2004 .

Direct observation of dislocations propagated from 4H–SiC substrate to epitaxial layer by X-ray topography

K. Kojima, H. Yamaguchi, K. Arai, 2004 .

Preparation of NdBa2Cu3O7−δ films in ultrahigh vacuum with a NO2 supersonic molecular beam

H. Nonaka, K. Arai, Takashi Shimizu, 1990 .

Nitrogen incorporation characteristics on a 4H-SiC epitaxial layer

K. Kojima, H. Okumura, K. Arai, 2006 .

In situ Observation of Clusters in Gas Phase during 4H-SiC Epitaxial Growth by Chemical Vapor Deposition Method

H. Okumura, Tetsuo Takahashi, Y. Ishida, 2004 .

Large Diameter and Long Length Growth of SiC Single Crystal

Tomohisa Kato, K. Arai, S. Nishizawa, 2004 .

In-situ Work Function Measurement of Molecular Beam Epitaxy Film Surface Using RHEED-Beam Excited Secondary Electron Peaks

H. Nonaka, S. Ichimura, K. Arai, 2002 .

Preparation of YBa_2Cu_3O_7−y films on SrTiO_3 and MgO by the dipping-pyrolysis process under low-p(O_2) heat treatment

S. Mizuta, W. Kondo, K. Arai, 1992 .

Preparation of high Jc Ba2YCu3O7−y‐Ag composite films on SrTiO3 (100) substrates by the dipping‐pyrolysis process

S. Mizuta, T. Kumagai, W. Kondo, 1992 .

Real time in situ observation of the film growth of hydrogenated amorphous silicon by infrared reflection absorption spectroscopy

A. Matsuda, Kazunobu Tanaka, K. Arai, 1990 .

Behavior of surface hydrogen on a-Ge:H

A. Matsuda, K. Arai, Y. Toyoshima, 1996 .

In-situ investigation of the growing a-Si:D surface by infrared reflection absorption spectroscopy

A. Matsuda, K. Arai, Y. Toyoshima, 1993 .

In situ characterization of the growing a-Si:H surface by IR spectroscopy

A. Matsuda, Kazunobu Tanaka, K. Arai, 1991 .

Ar (3P2) induced chemical vapor deposition of hydrogenated amorphous silicon

A. Matsuda, K. Arai, N. Washida, 1985 .

The Electrical Characteristics of Metal-Oxide-Semiconductor Field Effect Transistors Fabricated on Cubic Silicon Carbide

T. Kamiya, T. Ohshima, K. Kojima, 2003 .

Growth behavior and surface morphology of homoepitaxial YBa2Cu3O7−δ thin films on flux‐grown single crystals

K. Oka, H. Nonaka, K. Arai, 1994 .

Growth behavior of YBa2Cu3O7−δ and NdBa2Cu3O7−δ thin films observed by electron diffraction

H. Nonaka, K. Arai, Takashi Shimizu, 1991 .

Photochemical vapor deposition of amorphous silica films using disilane and perfluorosilanes: Defect structures and deposition mechanism

H. Nonaka, S. Ichimura, K. Arai, 1988 .

Photochemical hole‐burning study of 1,4‐dihydroxyanthraquinone doped in amorphous silica prepared by alcoholate method

H. Namikawa, A. Makishima, K. Arai, 1985 .

Preparation of High‐Jc MOD‐YBCO Films for Fault Current Limiters

I. Yamaguchi, T. Kumagai, W. Kondo, 2009 .

Evaluation of Residual Stress Distribution in Shot-Peened Steel by Synchrotron Radiation

Y. Akiniwa, Keisuke Tanaka, Kenji Suzuki, 2003 .

The post-annealing temperature dependences of electrical properties and surface morphologies for arsenic ion-implanted 4H-SiC at high temperature

H. Okushi, K. Fukuda, J. Senzaki, 2000 .

Electron-spin-echo envelope-modulation study of the distance between Nd3+ ions and Al3+ ions in the co-doped SiO2 glasses

S. Yamasaki, J. Isoya, H. Namikawa, 1996 .

Pressure effects on electrical conduction in glasses

H. Namikawa, K. Arai, K. Kumata, 1973 .

Electrical Properties of Silver Doped As-Se Glasses

H. Namikawa, K. Arai, S. Saitō, 1972 .

Glass Transition in Chalcogenide Glasses

K. Arai, S. Saitō, 1971 .

Reduction of interface-state density in 4H–SiC n-type metal–oxide–semiconductor structures using high-temperature hydrogen annealing

Kenji Fukuda, Seiji Suzuki, Kazuo Arai, 2000 .

Relationship between the Current Direction in the Inversion Layer and the Electrical Characteristics of Metal-Oxide-Semiconductor Field Effect Transistors on 3C-SiC

T. Ohshima, T. Kamiya, K. Kojima, 2004 .

Development of Oxidation Sources in Preparation of High-Tc Oxide Superconductor Thin Films Using the Molecular Beam Epitaxy Method

H. Nonaka, S. Ichimura, K. Arai, 1995 .

Preparation of oxide superconducting films in MBE using NO2 and O3 gases

H. Nonaka, S. Ichimura, K. Arai, 1991 .

Molecular structures and optical absorption edges of SeS melts

K. Arai, 1985 .

Observation of chemical reaction and liquid structure of SGe by Raman spectroscopy

K. Arai, 1983 .

Evaluation of the quality of commercial silicon carbide wafers by an optical non-destructive inspection technique

K. Fukuda, T. Hatakeyama, K. Arai, 2008 .

Deep UV Excitation Raman Spectroscopy of Homoepitaxial 4H-SiC Films Grown by Microwave Plasma Chemical Vapor Deposition

K. Fukuda, M. Okamoto, K. Arai, 2004 .

Effects of Densification on Electrical and Optical Properties of Chalcogenide Glasses

H. Namikawa, K. Arai, S. Saitō, 1973 .

Environment-resistive coating for the thin-film-based superconducting fault-current limiter Ag/Au–Ag/YBa2Cu3O7/CeO2/Al2O3

H. Matsui, I. Yamaguchi, T. Kumagai, 2010 .

Photoluminescence in Ge-S Glasses

H. Namikawa, K. Arai, U. Itoh, 1974 .

Effect of Gate Wet Reoxidation on Reliability and Channel Mobility of Metal-Oxide-Semiconductor Field-Effect Transistors Fabricated on 4H-SiC(000-1)

K. Fukuda, T. Hatakeyama, J. Senzaki, 2008 .

Impact ionization coefficients of 4H silicon carbide

N. Sano, T. Hatakeyama, K. Kojima, 2004 .

Analysis of Dislocation Structures in 4H‐SiC by Synchrotron X‐Ray Topography

T. Sekiguchi, T. Hatakeyama, Takuma Suzuki, 2016 .

Effects of ozone treatment of 4H–SiC(0001) surface

H. Okushi, K. Fukuda, K. Koike, 2000 .

Pre-Growth Treatment of 4H-SiC Substrates by Hydrogen Etching at Low Pressure

H. Okumura, Tetsuo Takahashi, Y. Ishida, 2000 .

Experimental Verification of the Cluster Effect on Giant Step Bunching on 4H-SiC (0001) Surfaces

H. Okumura, Tetsuo Takahashi, Y. Ishida, 2010 .

An evidence of solid-phase chemical equilibration of donor concentration in a-Si:H

H. Okushi, Kazunobu Tanaka, K. Arai, 1991 .

Relationship between channel mobility and interface state density in SiC metal–oxide–semiconductor field-effect transistor

Kenji Fukuda, Ryoji Kosugi, Shinsuke Harada, 2002 .

Compact supersonic molecular beam source with a liquid nitrogen trap

H. Nonaka, K. Arai, Takashi Shimizu, 1991 .

Application of NO2 Supersonic Molecular Beam to Oxide Superconductor Fabrication in MBE

H. Nonaka, K. Arai, Takashi Shimizu, 1991 .

Investigation of Degradation of Inversion Channel Mobility of SiC MOSFET due to the Increase of Channel Doping

Makoto Kato, K. Fukuda, T. Hatakeyama, 2005 .

Origin of Giant Step Bunching on 4H-SiC (0001) Surfaces

H. Okumura, Tetsuo Takahashi, Y. Ishida, 2008 .

Dislocation constraint by etch back process of seed crystal in the SiC sublimation growth

Tomohisa Kato, K. Arai, S. Nishizawa, 2001 .

Parameters required to simulate electric characteristics of SiC devices for n-type 4H-SiC

Takashi Shinohe, Hideharu Matsuura, Mitsuhiro Kushibe, 2004 .

Dependence of acceptor levels and hole mobility on acceptor density and temperature in Al-doped p-type 4H-SiC epilayers

T. Hatakeyama, K. Kojima, T. Shinohe, 2004 .

Shape Transformation of 4H-SiC Microtrenches by Hydrogen Annealing

T. Yatsuo, Yasunori Tanaka, Y. Ishida, 2009 .

1200 V, 35 A SiC-BGSIT with improved blocking gain of 480

Tsutomu Yatsuo, Koji Yano, Akio Takatsuka, 2010, 2010 22nd International Symposium on Power Semiconductor Devices & IC's (ISPSD).

Proposal of the Thermal Equilibrium Model for SiC Hydrogen Etching Phenomena

H. Okumura, Tetsuo Takahashi, Y. Ishida, 2006 .

Evaluation of Refilled Channel Regions in 4H-SiC Buried Gate Static Induction Transistors

T. Yatsuo, Yasunori Tanaka, K. Arai, 2010 .

Epitaxial Growth of High-Quality 4H-SiC Carbon-Face by Low-Pressure Hot-Wall Chemical Vapor Deposition

K. Kojima, K. Arai, J. Nishio, 2003 .

Crystalline Quality of Channel Regions in SiC Buried Gate Static Induction Transistors (SiC-BGSITs)

T. Yatsuo, Yasunori Tanaka, K. Arai, 2010 .

Short-Circuit Operation of SiC Buried Gate Static Induction Transistors (SiC BGSITs)

Tsutomu Yatsuo, Koji Yano, Akio Takatsuka, 2009 .

1270V, 1.21mΩ·cm2 SiC Buried Gate Static Induction Transistors (SiC-BGSITs)

Tsutomu Yatsuo, Koji Yano, Akio Takatsuka, 2008 .

Thermal oxidation of (0001) 4H-SiC at high temperatures in ozone-admixed oxygen gas ambient

K. Fukuda, K. Arai, R. Kosugi, 2003 .

Improvement of charge trapping by hydrogen post-oxidation annealing in gate oxide of 4H–SiC metal–oxide–semiconductor capacitors

Kenji Fukuda, Ryoji Kosugi, Seiji Suzuki, 2000 .

Temperature dependences of channel mobility and threshold voltage in 4H- and 6H-SiC MOSFETs

W. Cho, K. Fukuda, S. Harada, 2000 .

Depth profiling of the strain distribution in the surface layer using X-ray diffraction at small glancing angle of incidence

K. Arai, Y. Fujii, E. Yanase, 2005 .

Sin2 ψ stress measurement method with maintaining probing depth

K. Zolotarev, K. Arai, K. Nishio, 2001 .

Thin film growth behavior of YBa2Cu307−δ in sequential deposition with high-purity ozone gas

H. Nonaka, K. Arai, Takashi Shimizu, 1993 .

Reduction of incorporation of B, Al, Ti and N in 4H-SiC epitaxial-layer grown by chemical vapor deposition at higher growth temperature

Tetsuo Takahashi, K. Arai, M. Kushibe, 2001 .

Uniformity of 4H–SiC epitaxial layers grown on 3-in diameter substrates

K. Kojima, Tetsuo Takahashi, Y. Ishida, 2003 .

Homoepitaxial 4H-SiC films grown by microwave plasma chemical vapor deposition

K. Fukuda, M. Okamoto, K. Arai, 2002 .

Reaction kinetics of oxygen-deficient centers with diffusing oxygen molecules in silica glass

H. Imai, H. Hosono, K. Arai, 1994 .

Oxidation in preparation of oxide superconducting films by MBE using NO2 and O3 gases

H. Nonaka, S. Ichimura, K. Arai, 1992 .

Preparation of Nd-Doped SiO2 Glasses by Axial Injection Plasma Torch CVD and Their Fluorescence Properties

H. Namikawa, K. Arai, K. Kumata, 1984 .

Preparation of Nd-Doped SiO2 Glass by Plasma Torch CVD

H. Namikawa, K. Arai, Hiroaki Tanaka, 1982 .

Preparation of Nd−Al co-doped SiO2 glass by plasma torch CVD and its fluorescence properties

A. Negishi, Akihiro Noda, H. Namikawa, 1985 .

Enlargement Growth of Large 4H-SiC Bulk Single Crystal

H. Okumura, Tomohisa Kato, K. Arai, 2011 .

Shape of SiC Bulk Single Crystal Grown by Sublimation

Shin-ichi Nishizawa, Yasuo Kitou, Naoki Oyanagi, 2000 .

Influence of lattice polarity of nitrogen and aluminum doping on 4H-SiC epitaxial layer

K. Kojima, H. Okumura, K. Arai, 2006 .

Characterization of p-type 4H-SiC epitaxial layer grown on (11-20) substrate

Y. Ishida, K. Arai, Takaya Suzuki, 2001 .

Flux-Controlled Sublimation Growth by an Inner Guide-Tube

W. Bahng, Tomohisa Kato, K. Arai, 2002 .

Analyses of High Leakage Currents in Al+ Implanted 4H SiC pn Diodes Caused by Threading Screw Dislocations

K. Fukuda, N. Iwamuro, H. Okumura, 2010 .

Comparative Study of Heteroepitaxially and Homoepitaxially Grown 3C-SiC Films

H. Tsuchida, I. Kamata, H. Okumura, 2002 .

Modeling of SiC-CVD on Si-face/C-face in a horizontal hot-wall reactor

K. Kojima, M. Pons, K. Arai, 2005 .

High-Quality SiC Bulk Single Crystal Growth Based on Simulation and Experiment

W. Bahng, Tomohisa Kato, H. Yamaguchi, 2004 .

Effect of heat transfer on macroscopic and microscopic crystal quality in silicon carbide sublimation growth

Tomohisa Kato, K. Arai, S. Nishizawa, 2007 .

Stress Analysis of SiC Bulk Single Crystal Growth by Sublimation Method

Tomohisa Kato, K. Arai, S. Nishizawa, 2003 .

Effects of Annealing Conditions on Resistance Lowering of High-Phosphorus-Implanted 4H-SiC

K. Fukuda, J. Senzaki, K. Arai, 2004 .

Effect of Additional Silane on In Situ H2 Etching prior to 4H-SiC Homoepitaxial Growth

K. Kojima, H. Okumura, K. Arai, 2007 .

Single Contact-Material MESFETs on 4H-SiC

H. Okushi, S. Tanimoto, M. Hoshi, 2004 .

Improvements in Electrical Properties of n-Type-Implanted 4H-SiC Substrates Using High-Temperature Rapid Thermal Annealing

K. Fukuda, S. Harada, J. Senzaki, 2002 .

Enlargement of SiC Single Crystal: Enhancement of Lateral Growth using Tapered Graphite Lid

W. Bahng, S. Nishino, H. Yamaguchi, 2000 .

Influence of stacking faults on the performance of 4H–SiC Schottky barrier diodes fabricated on (112̄0) face

K. Kojima, N. Ohtani, M. Katsuno, 2002 .

Significant Improvement of Inversion Channel Mobility in 4H-SiC MOSFET on (11-20) Face Using Hydrogen Post-Oxidation Annealing

K. Fukuda, S. Harada, J. Senzaki, 2002 .

Comprehensive Study of Impact Ionization Coefficients of 4H-SiC

N. Sano, T. Hatakeyama, K. Kojima, 2004 .

Epitaxial Growth of (11-20) 4H-SiC Using Substrate Grown in the [11-20] Direction

K. Fukuda, J. Senzaki, K. Kojima, 2002 .

Reverse characteristics of pn diodes on 4H–SiC(000-1) C and (11-20) face

K. Fukuda, T. Yatsuo, K. Kojima, 2004 .

High-Rate Epitaxial Growth of 4H-SiC Using a Vertical-Type, Quasi-Hot-Wall CVD Reactor

K. Kojima, Tetsuo Takahashi, Y. Ishida, 2002 .

Impact of Oxidation Conditions and Surface Defects on the Reliability of Large-Area Gate Oxide on the C-Face of 4H-SiC

K. Fukuda, T. Hatakeyama, Takuma Suzuki, 2010 .

Evaluation of 4H-SiC Thermal Oxide Reliability Using Area-Scaling Method

K. Fukuda, J. Senzaki, Atsushi Shimozato, 2009 .

N-channel MOSFETs fabricated on homoepitaxy-grown 3C-SiC films

T. Kamiya, T. Ohshima, K. Kojima, 2003, IEEE Electron Device Letters.

3 kV Normally-Off 4H-SiC Buried Gate Static Induction Transistors (SiC-BGSITs)

T. Yatsuo, Yasunori Tanaka, K. Arai, 2014 .

Influence of C/Si Ratio on the 4H-SiC (0001) Epitaxial Growth and a Keynote for High-Rate Growth

K. Kojima, H. Okumura, Tetsuo Takahashi, 2004 .

Investigation of In-Grown Dislocations in 4H-SiC Epitaxial Layers

K. Kojima, H. Okumura, Tomohisa Kato, 2006 .

Defect and Growth Analysis of SiC Bulk Single Crystals with High Nitrogen Doping

Tomohisa Kato, K. Arai, S. Nishizawa, 2007 .

Determination of Etch Rate Behavior of 4H–SiC Using Chlorine Trifluoride Gas

Y. Fukai, H. Okumura, Tomohisa Kato, 2007 .

Measurement of Hall Mobility in 4H-SiC for Improvement of the Accuracy of the Mobility Model in Device Simulation

Seiji Imai, Takashi Shinohe, Mitsuhiro Kushibe, 2003 .

4H Silicon Carbide Etching Using Chlorine Trifluoride Gas

Y. Fukai, H. Okumura, Tomohisa Kato, 2008 .

Etching Rate Behavior of 4H-Silicon Carbide Using Chlorine Trifloride Gas

Y. Fukai, H. Okumura, Tomohisa Kato, 2008 .

Effect of Surface Orientation and Off-Angle on Surface Roughness and Electrical Properties of p-Type Impurity Implanted 4H-SiC Substrate after High Temperature Annealing

K. Fukuda, K. Kojima, K. Arai, 2006 .

Fabrication of 1.2kV, 100A, 4H-SiC(0001) and (000-1) Junction Barrier Schottky Diodes with Almost Same Schottky Barrier Height

K. Fukuda, T. Yatsuo, H. Okumura, 2010 .

Electrical Properties of pn Diodes on 4H-SiC(000-1) C-Face and (11-20) Face

K. Fukuda, T. Yatsuo, K. Kojima, 2004 .

4H-SiC Carbon-Face Epitaxial Layers Grown by Low-Pressure Hot-Wall Chemical Vapor Deposition

K. Kojima, H. Okumura, Tetsuo Takahashi, 2004 .

Simulation of High-Temperature SiC Epitaxial Growth Using Vertical, Quasi-Hot-Wall CVD Reactor

Tetsuo Takahashi, Y. Ishida, K. Arai, 2002 .

Electrical Characteristics of Ti/4H-SiC Slicidation Schottky Barrier Diode

K. Fukuda, T. Yatsuo, H. Okumura, 2008 .

Fabrication of 1.4-kV mesa-type p+–n diodes with avalanche breakdown and without forward degradation on high-quality 6H-SiC substrate

Kenji Fukuda, Tsutomu Yatsuo, Shin-ichi Nishizawa, 2003 .

Growth and Evaluation of High Quality SiC Crystal by Sublimation Method

Tomohisa Kato, H. Yamaguchi, K. Arai, 2002 .

Numerical Simulation of Heat and Mass Transfer in SiC Sublimation Growth

Tomohisa Kato, K. Arai, S. Nishizawa, 2002 .

In-situ Observation of SiC Bulk Single Crystal Growth by X-Ray Topography

Tomohisa Kato, H. Yamaguchi, K. Arai, 2000 .

X-ray Topographic Study of SiC Crystal at High Temperature

W. Bahng, Tomohisa Kato, H. Yamaguchi, 2000 .

SiC Single Crystal Growth Rate Measurement by In-Situ Observation using the Transmission X-Ray Technique

Tomohisa Kato, H. Yamaguchi, K. Arai, 2000 .

In-situ observation of silicon carbide sublimation growth by X-ray topography

Tomohisa Kato, H. Yamaguchi, K. Arai, 2001 .

Significant Improvement in Reliability of Thermal Oxide on 4H-SiC (0001) Face Using Ammonia Post-Oxidation Annealing

K. Fukuda, J. Senzaki, Atsushi Shimozato, 2010 .

Reliability of 4H-SiC(000-1) MOS Gate Oxide Using N2O Nitridation

Kenji Fukuda, Takuma Suzuki, Takashi Shinohe, 2009 .

Gate Oxide with High Dielectric Breakdown Strength after Undergoing a Typical Power MOSFET Fabrication Process

H. Okushi, S. Tanimoto, M. Hoshi, 2003 .

4.3 mΩcm2, 1100 V 4H-SiC Implantation and Epitaxial MOSFET

Makoto Kato, K. Fukuda, T. Yatsuo, 2006 .

Critical Reliability Issues for SiC Power MOSFETs Operated at High Temperature

S. Tanimoto, M. Hoshi, K. Arai, 2007 .

A 4.3−mΩcm2, 1100‐V normally‐off IEMOSFET on SiC

Kenji Fukuda, Tsutomu Yatsuo, Shinsuke Harada, 2008 .

8.5-m cm 600-V Double-Epitaxial MOSFETs in 4H-SiC

K. Fukuda, T. Yatsuo, S. Harada, 2004 .

Control of the Surface Morphology on Low Off Angled 4H-SiC Homoepitaxal Growth

K. Kojima, H. Okumura, K. Arai, 2009 .

Competitive Growth between Deposition and Etching in 4H-SiC CVD Epitaxy Using Quasi-Hot Wall Reactor

H. Okumura, Tetsuo Takahashi, Y. Ishida, 2000 .

Single Material Ohmic Contacts Simultaneously Formed on the Source/P-Well/Gate of 4H-SiC Vertical MOSFETs

H. Okushi, T. Yatsuo, S. Tanimoto, 2003 .

Impact Ionization Coefficients of 4H-SiC

N. Sano, T. Hatakeyama, K. Kojima, 2004 .

Defect Characterization of 4H-SiC Bulk Crystals Grown on Micropipe Filled Seed Crystals

K. Kojima, Tomohisa Kato, K. Arai, 2005 .

2-Inch 4H-SiC Homoepitaxial Layer Grown on On-Axis C-Face Substrate by CVD Method

H. Akinaga, A. Ohi, K. Kojima, 2005 .

High-quality schottky and ohmic contacts in planar 4H-SiC metal semiconductor field-effect transistors and device performance

H. Okushi, S. Tanimoto, K. Arai, 2004 .

A constant incidence angle method to estimate the subsurface distribution of residual stress by high-energy X-rays from synchrotron radiation source

Y. Akiniwa, Keisuke Tanaka, K. Arai, 2002 .

Investigation of Residual Impurities in 4H-SiC Epitaxial Layers Grown by Hot-Wall Chemical Vapor Deposition

K. Kojima, Tetsuo Takahashi, Y. Ishida, 2002 .

High-temperature post-oxidation annealing on the low-temperature oxide/4H-SiC(0001)

Kenji Fukuda, Ryoji Kosugi, Seiji Suzuki, 2002 .