D. Hansen

发表

Chemical role of oxygen plasma in wafer bonding using borosilicate glasses

T. Kuech, P. D. Moran, C. Albaugh, 2001 .

Plasma Induced Chemical Changes at Silica Surfaces During Pre-Bonding Treatments

T. Kuech, P. D. Moran, C. Albaugh, 2001 .

Transfer of n-type GaSb onto GaAs substrate by hydrogen implantation and wafer bonding

T. E. Haynes, M. Nastasi, T. Kuech, 2000 .

Lateral epitaxial overgrowth of GaN using diethyl gallium chloride in metal organic vapor phase epitaxy

Rong Zhang, T. Kuech, S. Gu, 2002 .

Low-Pressure Chemical Vapor Deposition of Borosilicate Glasses and their Application to Wafer Bonding

T. Kuech, P. D. Moran, D. Hansen, 1999 .

Chemical investigations of GaAs wafer bonded interfaces

T. Kuech, P. D. Moran, C. Albaugh, 2001 .

Epitaxial Lateral Overgrowth of GaN with Chloride-Based Growth Chemistries in Both Hydride and Metalorganic Vapor Phase Epitaxy

Rong Zhang, Youdou Zheng, B. Shen, 1998 .

InGaAs heteroepitaxy on GaAs compliant substrates: X-ray diffraction evidence of enhanced relaxation and improved structural quality

R. Matyi, L. Mawst, T. Kuech, 1999 .

Homoepitaxial Chemical Vapor Deposition of up to 150 μm Thick 4H-SiC Epilayers in a 10×100 mm Batch Reactor

Jie Zhang, G. Chung, D. Hansen, 2016 .

Lateral epitaxial overgrowth of GaSb on GaSb and GaAs substrates by metalorganic chemical vapor deposition

C. K. Inoki, T. Kuech, T. Kuan, 2000 .

Photoluminescence of erbium-implanted GaN and in situ-doped GaN:Er

Rong Zhang, T. Kuech, D. Hansen, 1998 .

Development of a glass-bonded compliant substrate

R. Matyi, T. Kuech, S. Babcock, 1998 .

Stacking faults created by the combined deflection of threading dislocations of Burgers vector c and c+a during the physical vapor transport growth of 4H–SiC

Balaji Raghothamachar, Michael Dudley, Fangzhen Wu, 2011 .

Effect of Doping Concentration Variations in PVT-Grown 4H-SiC Wafers

G. Chung, M. Dudley, B. Raghothamachar, 2016, Journal of Electronic Materials.

Basal plane dislocation multiplication via the Hopping Frank-Read source mechanism in 4H-SiC

M. Loboda, M. Dudley, B. Raghothamachar, 2012 .

Synchrotron Topography Studies of Growth and Deformation-Induced Dislocations in 4H-SiC

M. Loboda, G. Chung, M. Dudley, 2012 .

Direct Observation of Stacking Fault Nucleation from Deflected Threading Dislocations with Burgers Vector c+a in PVT Grown 4H-SiC

M. Loboda, G. Chung, M. Dudley, 2014 .

Simulation of Grazing-Incidence Synchrotron X-ray Topographic Images of Threading c+a Dislocations in 4H-SiC

M. Loboda, G. Chung, Yi Chen, 2012 .

High Quality 150 mm 4H SiC Wafers for Power Device Production

Edward Sanchez, Ian Manning, Kevin Moeggenborg, 2015 .

Deflection of Threading Dislocations with Burgers Vector c/c+a Observed in 4H-SiC PVT–Grown Substrates with Associated Stacking Faults

M. Loboda, M. Dudley, B. Raghothamachar, 2012 .

Formation Mechanism of Stacking Faults in PVT 4H-SiC Created by Deflection of Threading Dislocations with Burgers Vector c+a

M. Loboda, M. Dudley, B. Raghothamachar, 2011 .

Characterization of 100 mm Diameter 4H-Silicon Carbide Crystals with Extremely Low Basal Plane Dislocation Density

Ning Zhang, Balaji Raghothamachar, Michael Dudley, 2010 .

Analysis of Dislocation Behavior in Low Dislocation Density, PVT-Grown, Four-Inch Silicon Carbide Single Crystals

Balaji Raghothamachar, Michael Dudley, Yu Zhang, 2010 .

A Study of Nitrogen Incorporation in PVT Growth of n+ 4H SiC

M. Loboda, G. Chung, D. Hansen, 2006 .

Free carrier distribution profiling of 4H-SiC substrates using a commercial optical scanner

G. Chung, A. Bolotnikov, K. Hobart, 2007 .

Influence of Crystal Growth Conditions on Nitrogen Incorporation During PVT Growth of SiC

M. Loboda, D. Hansen, 2008 .

Carrier Lifetime Analysis by Microwave Photoconductive Decay (μ-PCD) for 4H SiC Epitaxial Wafers

M. Loboda, G. Chung, D. Hansen, 2007 .

Large Area 4H SiC Products for Power Electronic Devices

Jie Zhang, G. Chung, D. Hansen, 2016 .

Stacking Fault Formation via 2D Nucleation in PVT Grown 4H-SiC

M. Loboda, G. Chung, M. Dudley, 2015 .

Flux growth and luminescence of Ho : YAl3(BO3)4 and PrAl3(BO3)4 crystals

D. Hansen, N. Leonyuk, K. Bray, 1998 .

Experimental test for elastic compliance during growth on glass-bonded compliant substrates

Luke J. Mawst, Thomas F. Kuech, Darren Hansen, 2000 .

Realization and Characterization of Ultrathin GaAs‐on‐Insulator Structures

R. Matyi, T. Kuech, J. Redwing, 1999 .

Volume production of high quality SiC substrates and epitaxial layers: Defect trends and device applications

Balaji Raghothamachar, Michael Dudley, Jie Zhang, 2012 .

Measurement of Critical Thickness for the Formation of Interfacial Dislocations and Half Loop Arrays in 4H-SiC Epilayer via X-Ray Topography

Jie Zhang, M. Loboda, G. Chung, 2014 .

Boule Shape Dependence of Shear and von-Mises Stress Distributions in Bulk SiC during Sublimation Growth

M. Loboda, D. Hansen, R. Drachev, 2010 .

Defect Reduction in SiC Growth Using Physical Vapor Transport

Jie Zhang, M. Loboda, G. Chung, 2010 .

Current Status of the Quality of 4H-SiC Substrates and Epilayers for Power Device Applications

M. Dudley, J. Zhang, E. Sanchez, 2016 .

Basal Plane Dislocation Multiplication via the Hopping Frank-Read Source Mechanism and Observations of Prismatic Glide in 4H-SiC

M. Loboda, M. Dudley, B. Raghothamachar, 2012 .

Study of V and Y Shape Frank-Type Stacking Faults Formation in 4H-SiC Epilayer

Jie Zhang, M. Loboda, G. Chung, 2014 .

The Nucleation and Propagation of Threading Dislocations with C-Component of Burgers Vector in PVT-Grown 4H-SiC

M. Loboda, G. Chung, M. Dudley, 2013 .

Synchrotron X-Ray Topography Studies of the Propagation and Post-Growth Mutual Interaction of Threading Growth Dislocations with C-Component of Burgers Vector in PVT-Grown 4H-SiC

M. Loboda, M. Dudley, B. Raghothamachar, 2012 .

SiC Substrate Doping Profiles Using Commercial Optical Scanners

G. Chung, K. Hobart, O. Glembocki, 2006 .

Progress in Large-Area 4H-SiC Epitaxial Layer Growth in a Warm-Wall Planetary Reactor

Jie Zhang, M. Loboda, G. Chung, 2014 .

Progress of SiC Epitaxy on 150mm Substrates

Jie Zhang, D. Hansen, K. Moeggenborg, 2015 .

Characterization of V-shaped Defects in 4H-SiC Homoepitaxial Layers

Jie Zhang, M. Loboda, G. Chung, 2015, Journal of Electronic Materials.

Defect Reduction Paths in SiC Epitaxy

Jie Zhang, M. Loboda, G. Chung, 2014 .

Quantitative Comparison Between Dislocation Densities in Offcut 4H-SiC Wafers Measured Using Synchrotron X-ray Topography and Molten KOH Etching

M. Loboda, G. Chung, M. Dudley, 2013, Journal of Electronic Materials.

Combined Application of Section and Projection Topography to Defect Analysis in PVT-Grown 4H-SiC

M. Loboda, G. Chung, M. Dudley, 2012 .

Experimental verification of the model for formation of double Shockley stacking faults in highly doped regions of PVT-grown 4H–SiC wafers

G. Chung, M. Dudley, B. Raghothamachar, 2016 .

Thermo-Mechanical Modeling of a Representative Battery Pack for Electric Vehicles

D. Hansen, Greg Becker, L. Durfee, 2021, 2021 20th IEEE Intersociety Conference on Thermal and Thermomechanical Phenomena in Electronic Systems (iTherm).

Synchrotron X-Ray Topography Analysis of Double Shockley Stacking Faults in 4H-SiC Wafers

G. Chung, M. Dudley, B. Raghothamachar, 2016 .

Studies of the Origins of Half Loop Arrays and Interfacial Dislocations Observed in Homoepitaxial Layers of 4H-SiC

Jie Zhang, M. Loboda, G. Chung, 2015 .

Studies of the Origins of Half-Loop Arrays and Interfacial Dislocations Observed in Homoepitaxial Layers of 4H-SiC

M. Loboda, G. Chung, M. Dudley, 2015, Journal of Electronic Materials.

Photoluminescence and photoluminescence excitation spectroscopy of in situ Er-doped and Er-implanted GaN films grown by hydride vapor phase epitaxy

S. G. Bishop, Rong Zhang, Xiuling Li, 1999 .