J. B. Mckitterick

Bonding of silicon wafers for silicon‐on‐insulator

W. Maszara, G. Goetz, A. Caviglia, 1988 .

An analytic model for thin SOI transistors

J. B. McKitterick, A. Caviglia, J. B. Mckitterick, 1989 .

Radiation-induced charge effects in buried oxides with different processing treatments

C. A. Pennise, H. E. Boesch, G. Goetz, 1993 .

First-principles calculation of the dielectric properties of GaAs: Dielectric constant, effective charges, and piezoelectric constant

J. B. Mckitterick, 1983 .

Total Dose Radiation Hardness of Bonded Soi Wafers

W. Maszara, G. Goetz, A. Caviglia, 1992, 1992 IEEE International SOI Conference.

Radiation-induced defect centers in bonded and etchback SOI materials

Daniel M. Fleetwood, Marty R. Shaneyfelt, P. S. Winokur, 1993 .

Electron and hole trapping in irradiated SIMOX, ZMR and BESOI buried oxides

J. B. McKitterick, P. Roitman, Robert E. Stahlbush, 1992 .

Paramagnetic defect centers in BESOI and SIMOX buried oxides

Daniel M. Fleetwood, Marty R. Shaneyfelt, P. S. Winokur, 1993 .

225 C high temperature silicon-on-insulator (SOI) ASICs for harsh environments

J.C. Tsang, J.B. McKitterick, J.M. O'Connor, 1998, IWIPP Proceedings. IEEE International Workshop on Integrated Power Packaging (Cat. No.98EX203).

A 90 V breakdown high temperature SOI lateral power nMOSFET

J.C. Tsang, J.B. McKitterick, J.A. Zolnier, 1998, 1998 Fourth International High Temperature Electronics Conference. HITEC (Cat. No.98EX145).