D. Gräf

发表

Reaction of water with hydrofluoric acid treated silicon(111) and (100) surfaces

M. Grundner, D. Gräf, R. Schulz, 1989 .

The impact of nitrogen on the defect aggregation in silicon

W. Ammon, E. Dornberger, D. Gräf, 2001 .

Extraction of the carrier generation and recombination lifetime from the forward characteristics of advanced diodes

E. Simoen, C. Claeys, A. Poyai, 2003 .

Influence of Cu on the native oxide growth of Si

M. Grundner, D. Gräf, L. Mühlhoff, 1991 .

Characterization of Crystal Quality by Crystal Originated Particle Delineation and the Impact on the Silicon Wafer Surface

W. Ammon, D. Gräf, U. Lambert, 1998 .

Influence of HF‐H2O2 treatment on Si(100) and Si(111) surfaces

D. Gräf, A. Schnegg, S. Bauer-Mayer, 1993 .

Silicon Surface Treatments and their Impact on Chemical Composition and Morphology

D. Gräf, A. Ehlert, P. Wagner, 1993 .

Internal oxidation of vacancy agglomerates in Czochralski silicon wafers during high-temperature anneals

H. Richter, J. Vanhellemont, D. Gräf, 1998 .

Cation valencies and distribution in the spinels NiMn2O4 and MzNiMn2-zO4 (M = Li, Cu) studied by XPS

D. Gräf, P. Weissbrodt, J. Töpfer, 1992 .

Reaction of hydrofluoric acid and water with the GaAs(100) surface

M. Grundner, D. Gräf, R. Schulz, 1990 .

Oxidation of HF-treated Si wafer surfaces in air

R. Schulz, M. Grundner, D. Gräf, 1990 .

A Method for Studying the Grown‐In Defect Density Spectra in Czochralski Silicon Wafers

H. Richter, D. Gräf, U. Lambert, 1997 .

Reaction of NH4F/HF solutions on Si (100) and Si (111) surfaces

D. Gräf, A. Schnegg, S. Bauer-Mayer, 1993 .

On the Mechanism of Defect Suppression in Nitrogen-Doped Silicon Single Crystals

E. Dornberger, D. Gräf, R. Hölzl, 2001 .

Impact of Chemomechanical Polishing on the Chemical Composition and Morphology of the Silicon Surface

D. Gräf, P. Wagner, A. Schnegg, 1995 .

Rheology of a ferrofluid based on nanodisc cobalt particles

S. Odenbach, D. Borin, D. Gräf, 2009 .

Improvement of Czochralski Silicon Wafers By High‐Temperature Annealing

D. Gräf, U. Lambert, A. Ehlert, 1995 .

Key influence of the thermal history on process-induced defects in Czochralski silicon wafers

T. Grabolla, D. Gräf, U. Lambert, 1997 .

Comparison of high temperature annealed Czochralski silicon wafers and epitaxial wafers

D. Gräf, U. Lambert, A. Ehlert, 1996 .

Influence of Residual Point Defect Supersaturation on the Formation of Grown‐In Oxide Precipitate Nuclei in CZ‐Si

H. Richter, J. Vanhellemont, E. Dornberger, 1998 .

Grown‐in Oxide Precipitate Nuclei in Czochralski Silicon Substrates and Their Role in Device Processing

H. Richter, J. Vanhellemont, W. Ammon, 1999 .

New wet cleaning strategies for obtaining highly reliable thin oxides

M. Heyns, P. Mertens, D. Gräf, 1993 .

Measurement, modelling and simulation of defects in as-grown Czochralski silicon

S. Senkader, J. Vanhellemont, D. Gräf, 1997 .

On the Impact of Grown-in Silicon Oxide Precipitate Nuclei on Silicon Gate Oxide Integrity

J. Vanhellemont, D. Gräf, M. Depas, 1996 .

Influence of boron concentration on the oxidation-induced stacking fault ring in Czochralski silicon crystals

W. Ammon, E. Dornberger, D. Gräf, 1997 .