T. Ifstrom

A 150-V multiple up-drain VDMOS, CMOS, and bipolar process in 'direct-bonded' silicon on insulator on silicon

C. Harendt, H. Graf, T. Ifstrom, 1992, IEEE Electron Device Letters.

A 100-V lateral DMOS transistor with a 0.3-micrometer channel in a 1-micrometer silicon-film-on-insulator-on-silicon

B. Hofflinger, U. Apel, C. Harendt, 1991 .

A Smart Power Process in "Direct-Bondedd'' Silicon on Insulator with 150 V VDMOS, CMOS and Bipolar Transistors

C. Harendt, H. Graf, T. Ifstrom, 1992, ESSDERC '92: 22nd European Solid State Device Research conference.