S. Kukushkin

发表

Effect of Chemical Treatment of a Silicon Surface on the Quality and Structure of Silicon-Carbide Epitaxial Films Synthesized by Atom Substitution

A. V. Osipov, I. P. Kalinkin, S. Kukushkin, 2018 .

The equilibrium state in the Si-O-C ternary system during SiC growth by chemical substitution of atoms

A. V. Osipov, S. Kukushkin, 2015 .

Peculiarities of crystallization of thin ferroelectric films of lead zirconate titanate

S. Kukushkin, I. P. Pronin, V. Ugolkov, 2011 .

AlGaAs and AlGaAs/GaAs/AlGaAs nanowires grown by molecular beam epitaxy on silicon substrates

N. Akopian, T. Kasama, G. Cirlin, 2017 .

On the Mechanism of the Vapor–Solid–Solid Growth of Au-Catalyzed GaAs Nanowires

N. V. Sibirev, S. Kukushkin, A. A. Koryakin, 2019, Semiconductors.

Epitaxial Silicon Carbide Films Grown by New Method of Replacement of Atoms on the Surface of High-resistivity (111) Oriented Silicon

A. V. Osipov, N. Beisenkhanov, S. Kukushkin, 2016 .

Studying Evolution of the Ensemble of Micropores in a SiC/Si Structure during Its Growth by the Method of Atom Substitution

A. V. Osipov, S. Kukushkin, K. Kotlyar, 2019, Physics of the Solid State.

Separation of III–N/SiC epitaxial heterostructure from a Si substrate and their transfer to other substrate types

A. V. Osipov, S. Kukushkin, A. V. Red’kov, 2017 .

Sequential structural characterization of layers in the GaN/AlN/SiC/Si(111) system by X-ray diffraction upon every growth stage

A. V. Osipov, S. Kukushkin, V. Ratnikov, 2013 .

Thin-film PZT/SiC structure on silicon substrate: Formation, structural features, and dielectric properties

A. V. Osipov, S. Kukushkin, E. Kaptelov, 2008 .

Structural and elastoplastic properties of $$\upbeta $$β-$$\hbox {Ga}_{2}\hbox {O}_{3}$$Ga2O3 films grown on hybrid SiC/Si substrates

A. V. Osipov, S. Kukushkin, V. Nikolaev, 2018 .

Study of the Anisotropic Elastoplastic Properties of β-Ga2O3 Films Synthesized on SiC/Si Substrates

A. V. Osipov, S. Kukushkin, V. Nikolaev, 2018 .

Epitaxial gallium oxide on a SiC/Si substrate

A. V. Osipov, S. Kukushkin, V. Nikolaev, 2016 .

International Conference “Mechanisms and Nonlinear Problems of Nucleation and Growth of Crystals and Thin Films” Dedicated to the Memory of Professor V.V. Slezov, an Outstanding Theoretical Physicist

S. Kukushkin, L. Davydov, 2019, Physics of the Solid State.

Plasma assisted molecular beam epitaxy of thin GaN films on Si(111) and SiC/Si(111) substrates: Effect of SiC and polarity issues

A. V. Osipov, S. Kukushkin, A. Mizerov, 2018 .

Role of elastic energy in the formation of ferroelectric barium strontium titanate films on sapphire

A. V. Osipov, A. Tumarkin, S. Kukushkin, 2015 .

Semipolar GaN(10–11) Epitaxial Layer Prepared on Nano‐Patterned SiC/Si(100) Template

S. Kukushkin, V. Smirnov, D. Kibalov, 2018, physica status solidi (b).

Drastic change in surface electronic properties and creation of a new carbon-based nanostructure on the vicinal SiC(111)-4° surface

S. Kukushkin, G. Benemanskaya, S. Timoshnev, 2020 .

MBE growth and Structural Properties of InAs and InGaAs Nanowires with Different Mole Fraction of In on Si and Strongly Mismatched SiC/Si(111) Substrates

A. V. Osipov, G. Cirlin, S. Kukushkin, 2018 .

MBE growth of ultrathin III–V nanowires on a highly mismatched SiC/Si(111) substrate

A. V. Osipov, G. Cirlin, S. Kukushkin, 2017 .

Epitaxial Growth of Cadmium Selenide Films on Silicon with a Silicon Carbide Buffer Layer

A. V. Osipov, S. Kukushkin, V. V. Antipov, 2018 .

MBE Growth and Optical Properties of GaN, InN, and A3 B5 Nanowires on SiC/Si(111) Hybrid Substrate

A. V. Osipov, E. Nikitina, G. Cirlin, 2018, Advances in Condensed Matter Physics.

The Gorsky effect in the synthesis of silicon-carbide films from silicon by topochemical substitution of atoms

A. V. Osipov, S. Kukushkin, A. Osipov, 2017 .

Dielectric Function and Magnetic Moment of Silicon Carbide Containing Silicon Vacancies

A. V. Osipov, S. Kukushkin, A. Osipov, 2022, Materials.

Theory and practice of SiC growth on Si and its applications to wide-gap semiconductor films

A. V. Osipov, S. Kukushkin, A. Osipov, 2014 .

Influence of a Nanoporous Silicon Layer on the Practical Implementation and Specific Features of the Epitaxial Growth of GaN Layers on SiC/por-Si/c-Si Templates

H. Leiste, S. Kukushkin, I. Arsentyev, 2020, Semiconductors.

Epitaxial growth of zinc oxide by the method of atomic layer deposition on SiC/Si substrates

A. V. Osipov, S. Kukushkin, A. I. Romanychev, 2016 .

Determination of migration mechanisms and their influence on the structure of films

S. Kukushkin, V. Rubets, 1992 .

Investigation of the Physicomechanical Characteristics of Nanoscale Films by Nanoindentation

A. V. Osipov, S. Kukushkin, A. Redkov, 2018, Mechanics of Solids.

The Influence of the Porosity of Silicon Layer on the Elastic Properties of Hybrid SiC/Si Substrates

A. V. Osipov, S. Kukushkin, A. A. Koryakin, 2021, Technical Physics Letters.

Pore- and delamination-induced mismatch strain relaxation and conditions for the formation of dislocations, cracks, and buckles in the epitaxial AlN(0001)/SiC/Si(111) heterostructure

A. V. Osipov, S. Kukushkin, R. Telyatnik, 2015 .

The Mechanical Properties of a SiC Composite Coating on Graphite Produced by the Atom-Substitution Method

A. V. Osipov, S. Kukushkin, A. Redkov, 2022, Technical Physics Letters.

A new insight into the mechanism of low-temperature Au-assisted growth of InAs nanowires

S. Kukushkin, R. Reznik, K. Kotlyar, 2019, CrystEngComm.

Ascending Si diffusion into growing GaN nanowires from the SiC/Si substrate: up to the solubility limit and beyond

A. V. Osipov, J. Tomm, S. Kukushkin, 2020, Nanotechnology.

Effect of SiC buffer layer on GaN growth on Si via PA-MBE

A. V. Osipov, S. Kukushkin, A. Mizerov, 2017 .

Elastic Properties of GaN and AlN Films Formed on SiC/Si Hybrid Substrate, a Porous Basis

A. V. Osipov, S. Kukushkin, A. S. Grashchenko, 2020, Mechanics of Solids.

Study of Elastic Properties of SiC Films Synthesized on Si Substrates by the Method of Atomic Substitution

A. V. Osipov, S. Kukushkin, A. S. Grashchenko, 2019, Physics of the Solid State.

Study of SiC buffer layer thickness influence on photovoltaic properties of n-GaN NWs/SiC/p-Si heterostructure

A. V. Osipov, A. Bolshakov, A. Mozharov, 2019, Materials Science in Semiconductor Processing.

The use of SiC/Si hybrid substrate for MBE growth of thick GaN layers

A. V. Osipov, G. Cirlin, S. Kukushkin, 2019 .

On the Growth of Thin-Film AlGaN/GaN Epitaxial Heterostructures on Hybrid Substrates Containing Layers of Silicon Carbide and Porous Silicon

E. Nikitina, Alias Radam, S. Kukushkin, 2022, Semiconductors.

Growth and optical properties of filamentary GaN nanocrystals grown on a hybrid SiC/Si(111) substrate by molecular beam epitaxy

I. P. Soshnikov, A. V. Osipov, E. Nikitina, 2016 .

The use of SiC/Si(111) hybrid substrate for MBE growth of GaN nanowires

A. V. Osipov, E. Nikitina, G. Cirlin, 2016 .

MBE growth and optical properties of GaN nanowires on SiC/Si(111) hybrid substrate

A. V. Osipov, E. Nikitina, G. Cirlin, 2016, 2016 International Conference Laser Optics (LO).

Influence of elastic stresses on the vapor-solid-solid growth mechanism of Au-catalyzed GaAs nanowires

S. Kukushkin, A. A. Koryakin, 2018, Journal of Physics: Conference Series.

New Semipolar Aluminum Nitride Thin Films: Growth Mechanisms, Structure, Dielectric and Pyroelectric Properties

A. V. Osipov, S. Kukushkin, I. P. Pronin, 2019, Ferroelectrics.

TEM investigation of semipolar GaN layers grown on Si(001) offcut substrates

D. Kirilenko, S. Kukushkin, L. Sorokin, 2015 .

Aluminum and gallium nitrides on a silicon substrate with an intermediate silicon carbide nanolayer for ultraviolet devices

A. V. Osipov, S. Kukushkin, M. Shcheglov, 2011 .

Elastic interaction of point defects in cubic and hexagonal crystals

A. V. Osipov, S. Kukushkin, R. Telyatnik, 2016 .

CARBON-BASED NANOSTRUCTURE CREATED BY Ba AND Cs ATOMIC LAYER DEPOSITION ON THE VICINAL 3 CSiC ( 111 ) SURFACES

A. V. Osipov, S. Kukushkin, G. Benemanskaya, 2017 .

An interpolation model for the equation of state in binary systems

A. V. Osipov, S. Kukushkin, 2000, physics/0012042.

Luminescence spectra of hexagonal forms of silicon carbide in mosaic films grown by solid-state epitaxy

S. Kukushkin, M. Kompan, N. Feoktistov, 2009 .

SEMIPOLAR GALLIUM NITRIDE ON SILICON: TECHNOLOGY AND PROPERTIES

A. Ioffe, S. Kukushkin, V. Bessolov, 2014 .

Stability of the surface of an elastically strained multicomponent film in a system with chemical reactions

S. Kukushkin, A. Redkov, A. Osipov, 2015, Physics of the Solid State.

Vacancy Growth of a Faceted Pore in a Crystal via Chernov Mechanism

S. Kukushkin, A. Osipov, A. V. Redkov, 2020, Mechanics of Solids.

A quantum-mechanical model of dilatation dipoles in topochemical synthesis of silicon carbide from silicon

S. Kukushkin, A. Osipov, 2017 .

Elastic interaction of point defects in cubic and hexagonal crystals

S. Kukushkin, R. Telyatnik, A. Osipov, 2016, Physics of the Solid State.

The evolution of vacant porosity in alkali halide single crystals

S. Kukushkin, A. Shapurko, 1992 .

Formation of composite SiC-C coatings on graphite via annealing Si-melt in CO

S. Kukushkin, A. Redkov, A. S. Grashchenko, 2021 .

Microscopic Description of the Mechanism of Transition between the 2H and 4H Polytypes of Silicon Carbide

S. Kukushkin, A. Osipov, 2019, Physics of the Solid State.

A new mechanism of elastic energy relaxation in heteroepitaxy of monocrystalline films: Interaction of point defects and dilatation dipoles

S. Kukushkin, A. Osipov, 2013 .

A new method for the synthesis of epitaxial layers of silicon carbide on silicon owing to formation of dilatation dipoles

S. Kukushkin, A. Osipov, 2013 .

Photoemission studies of the vicinal SiC(100) 4° surface and the Cs/SiC(100) 4° interface

S. Kukushkin, G. Benemanskaya, P. Dementev, 2016 .

The C 1s core level spectroscopy of carbon atoms at the surface SiC/Si(111)-4° layer and Cs/SiC/Si(111)-4° interface

S. Kukushkin, G. Benemanskaya, M. N. Lapushkin, 2016 .

Induced surface states of the ultrathin Ba/3C-SiC(111) interface

S. Kukushkin, G. Benemanskaya, P. Dementev, 2016 .

Synchrotron-radiation photoemission study of the ultrathin Ba/3C–SiC(111) interface

B. Senkovskiy, S. Kukushkin, G. Benemanskaya, 2016 .

Growing III–V Semiconductor Heterostructures on SiC/Si Substrates

S. Kukushkin, A. S. Grashchenko, A. V. Red’kov, 2019, Technical Physics Letters.

A New Type of Carbon Nanostructure on a Vicinal SiС(111)-8° Surface

S. Kukushkin, G. Benemanskaya, S. Timoshnev, 2019, Technical Physics Letters.

Synthesis of epitaxial silicon carbide films through the substitution of atoms in the silicon crystal lattice: A review

S. Kukushkin, N. Feoktistov, A. Osipov, 2014 .

Pyroelectric and piezoelectric responses of thin AlN films epitaxy-grown on a SiC/Si substrate

D. Kiselev, S. Kukushkin, I. P. Pronin, 2016 .

Stress-driven nucleation of coherent islands: theory and experiment

F. Schmitt, P. Hess, S. Kukushkin, 2002 .

Self‐Consistent Modeling of Nucleation and Growth of 2D Islands on the Top Facet of Self‐Catalyzed GaAs Nanowires

S. Kukushkin, A. Koryakin, 2021, physica status solidi (b).

New phase formation on solid surfaces and thin film condensation

S. Kukushkin, A. Osipov, 1996 .

Type IIA photosensitivity and formation of pores in optical fibers under intense ultraviolet irradiation

M. Shlyagin, S. Kukushkin, A. Chtcherbakov, 2007 .

Soliton model of island migration in thin films

S. Kukushkin, A. Osipov, 1995 .

Kinetics of the late stage of first-order phase transitions under laser irradiation

S. Kukushkin, A. G. Ambrok, E. Kalashnikov, 2002 .

Evolution of Phase Composition and Associated Properties in the Process of Growth of Nanostructured Films

S. Kukushkin, A. Osipov, 2000 .

Diffusional coalescence of island films on the real crystal surface in the case of layer-by-layer growth of islands. III: analysis of the model

S. Kukushkin, T. Sakalo, 1994 .

Diffusional coalescence of island films on the real crystal surface in the case of layer-by-layer growth of islands—IV. Theory and experiment

S. Kukushkin, T. Sakalo, 1994 .

Microscopic theory of epitaxial film growth on vicinal surfaces

S. Kukushkin, A. Osipov, 1993 .

Diffusional coalescence of island films on the real crystal surface in the case of layer-by-layer growth of islands—I. An isolated system

S. Kukushkin, T. Sakalo, 1993 .

Diffusional coalescence of island films on the real crystal surface in the case of layer-by-layer growth of islands. II. An open system. Undamped sources of deposited atoms

S. Kukushkin, T. Sakalo, 1993 .

On the theory of non-isothermal coalescence (coarsening) in the decomposition of supersaturated solid solutions

S. Kukushkin, V. Slyozov, 1992 .

The nucleation of coherent semiconductor islands during the Stranski-Krastanov growth induced by elastic strains

P. Hess, S. Kukushkin, F. Schmitt, 2002 .

Growth of faceted pores in a multi-component crystal by applying mechanical stress

S. Kukushkin, A. Redkov, A. Osipov, 2020 .

Kinetics of the initial stage of first-order phase transitions

S. Kukushkin, I. P. Pronin, E. Kaptelov, 1998 .

Kinetics of first-order phase transitions in the asymptotic stage

S. Kukushkin, A. Osipov, 1998 .

Evolution processes in multicomponent and multiphase films

S. Kukushkin, 1992 .

Evolution of phase composition and associated properties in the process of growth of thin films

S. Kukushkin, A. Osipov, 1999 .

Formation and evolution of the phase composition and associated properties during the growth of thin films

S. Kukushkin, A. Osipov, 1997 .

Perturbation theory in the kinetics of first-order phase transitions

S. Kukushkin, A. V. Osipov, 1997 .

Self-organization in the process of multicomponent film nucleation

S. Kukushkin, A. Osipov, 1997 .

Evolutionary processes in ensembles of disperse particles on the surfaces of solids. Mechanisms of initial stages of formation of thin multicomponent films. I: Conservative systems

A. Tybulewicz, S. Kukushkin, 1993 .

Dynamic Interaction of Steps and Nanoislands during Growth of a Multicomponent Crystal

S. Kukushkin, A. Redkov, 2021, Crystal Growth & Design.

Vacancy Growth of a Faceted Pore in a Crystal via Chernov Mechanism

S. Kukushkin, A. Redkov, A. Osipov, 2020 .

Misfit dislocation locking and rotation during gallium nitride growth on SiC/Si substrates

S. Kukushkin, E. Konenkova, V. Panteleev, 2017 .

Polarization switching kinetics in ferroelectrics

S. Kukushkin, A. Osipov, 2001 .

Mechanism of Formation of Carbon–Vacancy Structures in Silicon Carbide during Its Growth by Atomic Substitution

S. Kukushkin, A. V. Osipov, 2018, Physics of the Solid State.

Techniques for Polytypic Transformations in Silicon Carbide

S. Kukushkin, A. Osipov, 2019, Physics of the Solid State.

Structural and elastoplastic properties of β -Ga 2 O 3 ﬁlms grown on hybrid SiC/Si substrates

S. Kukushkin, V. Nikolaev, I. Soshnikov, 2018 .

Kinetics of the initial stage in a first-order phase transformation in thin films

S. Kukushkin, I. P. Pronin, E. Kaptelov, 1997 .

Self-Organization of the Composition of AlxGa1 – xN Films Grown on Hybrid SiC/Si Substrates

E. Ubyivovk, S. Kukushkin, K. Kotlyar, 2021, Physics of the Solid State.

Morphological stability criterion for a spherical crystallization front in a multicomponent system with chemical reactions

S. Kukushkin, A. Redkov, A. Osipov, 2014 .

Structural characterization of GaN epilayers on silicon: Effect of buffer layers

S. Kukushkin, L. Sorokin, A. Kalmykov, 2011 .

New method for growing silicon carbide on silicon by solid-phase epitaxy: Model and experiment

S. Kukushkin, A. Osipov, 2008 .

Theory of Phase Transformations in the Mechanics of Solids and its Applications for Description of Fracture, Formation of Nanostructures and Thin Semiconductor Films Growth

S. Kukushkin, A. Osipov, 2012 .

Phase transitions and the nucleation of catalytic nanostructures under the action of chemical, physical, and mechanical factors

S. Kukushkin, A. Osipov, 2008 .

Kinetics of non-isothermal nucleation of thin films

S. Kukushkin, A. Osipov, 1995 .

Quantum mechanical theory of epitaxial transformation of silicon to silicon carbide

S. Kukushkin, A. Osipov, 2017 .

Growth and structure of GaN layers on silicon carbide synthesized on a Si substrate by the substitution of atoms: A model of the formation of V-defects during the growth of GaN

A. Tsatsul'nikov, S. Troshkov, S. Kukushkin, 2015 .

Critical current in high-temperature superconductors with disordered tilt grain boundaries

I. Ovid’ko, S. Kukushkin, A. V. Osipov, 2000 .

Nucleation of pores in brittle solids under load

S. Kukushkin, 2005 .

Optical Properties of GaN/SiC/por-Si/Si(111) Hybrid Heterostructures

E. Nikitina, S. Kukushkin, P. Seredin, 2020, Semiconductors.

Semipolar AlN on Si(100)

S. Kukushkin, V. Bessolov, E. Konenkova, 2017 .

First-order phase transition through an intermediate state

S. Kukushkin, A. Osipov, 2014 .

Growth, structure, and morphological stability of nuclei growing from eutectic melts

S. Kukushkin, A. Osipov, 1997 .

Epitaxial growth of cadmium sulfide films on silicon

S. Kukushkin, V. V. Antipov, A. Osipov, 2016 .

Kinetic model of coherent island formation in the case of self-limiting growth

F. Schmitt, P. Hess, S. Kukushkin, 2001 .

Strength and structural properties of AlN films grown on SiC/Si substrates synthesized by atomic substitution

S. Kukushkin, A. S. Grashchenko, A. Osipov, 2019, Journal of Physics: Conference Series.

Epitaxial growth of cadmium telluride films on silicon with a buffer silicon carbide layer

S. Kukushkin, V. V. Antipov, A. Osipov, 2017 .

Epitaxial silicon carbide on a 6″ silicon wafer

S. Kukushkin, N. Feoktistov, A. Lukyanov, 2014 .

Chloride vapor-phase epitaxy of gallium nitride on silicon: Effect of a silicon carbide interlayer

S. Kukushkin, M. Kompan, M. Shcheglov, 2008 .

Spintronic Properties of the Interface between Si(111) and 3C–SiC(111) Grown by the Method of Coordinated Substitution of Atoms

S. Kukushkin, A. Osipov, E. V. Osipova, 2022, Technical Physics Letters.

Spiral growth of a multicomponent crystal from vapor of its components

S. Kukushkin, A. Redkov, A. Osipov, 2020 .

Stability of the surface of an elastically strained multicomponent film in a system with chemical reactions

S. Kukushkin, A. Redkov, A. Osipov, 2015 .

Synchrotron-based photoemission study of electronic structure of the Cs/GaN ultrathin interface

S. Kukushkin, G. Benemanskaya, S. Timoshnev, 2018 .

Dislocation Reactions in a Semipolar Gallium Nitride Layer Grown on a Vicinal Si(001) Substrate Using Aluminum Nitride and 3C–SiC Buffer Layers

M. Gutkin, S. Kukushkin, A. Kalmykov, 2019, Physics of the Solid State.

Spin Polarization and Magnetic Moment in Silicon Carbide Grown by the Method of Coordinated Substitution of Atoms

S. Kukushkin, A. Osipov, 2021, Materials.

Epitaxial Growth of Zinc Sulfide by Atomic Layer Deposition on SiC/Si Hybrid Substrates

S. Kukushkin, V. V. Antipov, A. Osipov, 2019, Technical Physics Letters.

Properties of SiC Films Obtained by the Method of Substitution of Atoms on Porous Silicon

S. Kukushkin, I. Soshnikov, A. S. Grashchenko, 2018 .

Drift mechanism of mass transfer on heterogeneous reaction in crystalline silicon substrate

S. Kukushkin, A. Osipov, 2017 .

Dielectric and pyroelectric properties of AlN single-crystal layers grown by chloride-hydride epitaxy

S. Kukushkin, I. P. Pronin, A. Solnyshkin, 2022, Ferroelectrics.

Epitaxial Silicon Carbide on Silicon. Method of Coordinated Substitution of Atoms (A Review)

S. Kukushkin, A. Osipov, 2022, Russian Journal of General Chemistry.

Dielectric and polar properties of aluminum nitride single crystals

S. Kukushkin, I. P. Pronin, A. Solnyshkin, 2021 .

Influence of Orientation of a Silicon Substrate with a Buffer Silicon Carbide Layer on Dielectric and Polar Properties of Aluminum Nitride Films

D. Kiselev, S. Kukushkin, I. P. Pronin, 2019, Physics of the Solid State.

SUBSTRATES FOR EPITAXY OF GALLIUM NITRIDE: NEW MATERIALS AND TECHNIQUES

V. Nevolin, S. Kukushkin, V. Bessolov, 2008 .

Structural properties and parameters of epitaxial silicon carbide films, grown by atomic substitution on the high-resistance (111) oriented silicon

N. Beisenkhanov, S. Kukushkin, D. Bakranova, 2017 .

Raman Investigation of Different Polytypes in SiC Thin Films Grown by Solid-Gas Phase Epitaxy on Si (111) and 6H-SiC Substrates

S. A. Grudinkin, T. Perova, N. Feoktistov, 2010 .

MBE growth and properties of GaAs, AlGaAs and InAs nanowires on SiC/Si(111) hybrid substrate

D. Kirilenko, G. Cirlin, S. Kukushkin, 2018, Journal of Physics: Conference Series.

A New Method for Relaxation of Elastic Stresses During the Growth of Heteroepitaxial Films

S. Kukushkin, M. Shcheglov, S. Sharofidinov, 2023, Mechanics of Solids.

Growth Mechanism of Semipolar AlN Layers by HVPE on Hybrid SiC/Si(110) Substrates

S. Kukushkin, M. Shcheglov, S. Sharofidinov, 2022, Materials.

Pendeo-epitaxy of stress-free AlN layer on a profiled SiC/Si substrate

A. Lipovskii, D. Karpov, S. Kukushkin, 2016 .

Semipolar AlN and GaN on Si(100): HVPE technology and layer properties

S. Kukushkin, V. Bessolov, E. Konenkova, 2017 .

Nanoscale Single-Crystal Silicon Carbide on Silicon and Unique Properties of This Material

S. Kukushkin, A. Osipov, 2021, Inorganic Materials.

Epitaxial Growth of Bulk Semipolar AlN Films on Si(001) and Hybrid SiC/Si(001) Substrates

S. Kukushkin, A. Redkov, S. Sharofidinov, 2020, Technical Physics Letters.

Development of Burton–Cabrera–Frank Theory for the Growth of a Non-Kossel Crystal via Chemical Reaction

S. Kukushkin, A. Redkov, 2020 .

Method for Controlling the Polarity of Gallium Nitride Layers in Epitaxial Synthesis of GaN/AlN Heterostructures on Hybrid SiC/Si Substrates

S. Kukushkin, K. Shubina, T. N. Berezovskaya, 2019, Physics of the Solid State.

A New Method of Growing AlN, GaN, and AlGaN Bulk Crystals Using Hybrid SiC/Si Substrates

S. Kukushkin, S. Sharofidinov, 2019, Physics of the Solid State.

Structural characterization of GaN/AIN layers on 3C-SiC/Si(111) by TEM

S. Kukushkin, L. Sorokin, A. Kalmykov, 2011 .

Metal organic vapor phase epitaxy growth of (Al)GaN heterostructures on SiC/Si(111) templates synthesized by topochemical method of atoms substitution

P. Brunkov, S. Troshkov, S. Kukushkin, 2017 .

A New Trigonal (Rhombohedral) SiC Phase: Ab Initio Calculations, a Symmetry Analysis and the Raman Spectra

S. Kukushkin, Yu. E. Kitaev, A. Redkov, 2018, Physics of the Solid State.

Transmission electron microscopy study of semi-polar gallium nitride layer grown by hydride-chloride vapour-phase epitaxy on SiC/(001)Si heterostructure

S. Kukushkin, L. Sorokin, A. Kalmykov, 2013 .

Ion and electron emission characteristics at potential barrier modulation

S. Kukushkin, E. Moos, I. A. Seltzer, 2008 .

Comparative Ellipsometric Analysis of Silicon Carbide Polytypes 4H, 15R, and 6H Produced by a Modified Lely Method in the Same Growth Process

A. Markov, V. Luchinin, S. Kukushkin, 2020, Technical Physics Letters.

The Mechanism of Growth of GaN Films by the HVPE Method on SiC Synthesized by the Substitution of Atoms on Porous Si Substrates

S. Kukushkin, I. Soshnikov, A. Redkov, 2018 .

Anomalous Properties of the Dislocation-Free Interface between Si(111) Substrate and 3C-SiC(111) Epitaxial Layer

S. Kukushkin, A. Osipov, 2020, Materials.

Two-Stage Conversion of Silicon to Nanostructured Carbon by the Method of Coordinated Atomic Substitution

S. Kukushkin, N. Feoktistov, A. Osipov, 2019, Physics of the Solid State.

Anisotropy of the solid-state epitaxy of silicon carbide in silicon

S. Kukushkin, A. Osipov, 2013 .

X-ray reflectometry and simulation of the parameters of SiC epitaxial films on Si(111), grown by the atomic substitution method

S. Kukushkin, D. Bakranova, K. Nussupov, 2017 .

Structural heteroepitaxy during topochemical transformation of silicon to silicon carbide

V. Egorov, E. Egorov, S. Kukushkin, 2017 .

Determining polytype composition of silicon carbide films by UV ellipsometry

S. Kukushkin, A. Osipov, 2016 .

Nanoindentation and deformation properties of nanoscale silicon carbide films on silicon substrate

S. Kukushkin, A. S. Grashchenko, A. Osipov, 2014 .

Thin-film heteroepitaxy by the formation of the dilatation dipole ensemble

S. Kukushkin, A. Osipov, 2012 .

Structural and optical properties of high quality ZnO thin film on Si with SiC buffer layer

Anirban Mitra, Bipin Kumar Gupta, B. K. Gupta, 2012 .

SEM, Dielectric, Pyroelectric, and Piezoelectric Response of Thin Epitaxial AlN Films Grown on SiC/Si Substrate

D. M. Krasovitsky, D. Kiselev, S. Ksenich, 2015 .

Photoluminescence spectra of n-ZnO/p-GaN:(Er + Zn) and p-AlGaN:(Er + Zn) heterostructures

R. V. Kuz’min, M. M. Mezdrogina, S. Kukushkin, 2008 .

A new method for Synthesis of Epitaxial Films of Silicon Carbide on Sapphire Substrates (α-Al2O3)

S. D. Fedotov, S. Timoshenkov, S. Kukushkin, 2018, Reviews on Advanced Materials Science.

Vacancy growth of monocrystalline SiC from Si by the method of self-consistent substitution of atoms

S. Kukushkin, A. Redkov, A. S. Grashchenko, 2021, Catalysis Today.

Photoelectric Properties of GaN Layers Grown by Plasma-Assisted Molecular-Beam Epitaxy on Si(111) Substrates and SiC/Si(111) Epitaxial Layers

E. Nikitina, M. Sobolev, S. Kukushkin, 2019, Semiconductors.

MBE synthesis and properties of GaN NWs on SiC/Si substrate and InGaN nanostructures on Si substrate

N. Kryzhanovskaya, G. Cirlin, S. Kukushkin, 2020, Journal of Physics: Conference Series.

Photoelectric characteristics of silicon carbide–silicon structures grown by the atomic substitution method in a silicon crystal lattice

S. Kukushkin, E. Kalinina, A. S. Grashchenko, 2017 .

Evolution of the symmetry of intermediate phases and their phonon spectra during the topochemical conversion of silicon into silicon carbide

S. Kukushkin, Yu. E. Kitaev, A. Osipov, 2017 .

IR spectra of carbon-vacancy clusters in the topochemical transformation of silicon into silicon carbide

S. A. Grudinkin, S. Kukushkin, N. Feoktistov, 2017 .

Dependencies of photoelectric properties of SiC/Si structures grown by the method of atoms substitution on synthesis time

S. Kukushkin, A. S. Grashchenko, N. Feoktistov, 2017 .

Optical and electrical properties of thin carbide-containing films on silicon

S. Gordeev, S. Kukushkin, S. B. Korchagina, 2006 .

Nonequilibrium heteroepitaxy of silicon carbide on silicon

S. Gordeev, S. Kukushkin, S. B. Korchagina, 2005 .

Aluminum nitride on silicon: Role of silicon carbide interlayer and chloride vapor-phase epitaxy technology

S. Kukushkin, M. Shcheglov, L. Sorokin, 2010 .

HETEROEPITAXY OF GALLIUM NITRIDE LAYERS: THE ROLE OF INITIAL STAGES IN FILM FORMATION

A. Ioffe, S. Kukushkin, 2003 .

Relaxational Liquid Epitaxy with Reverse Mass Transport and Its Potential for Preparing Thin Films of A3B5 Semiconductors

M. Lebedev, S. Kukushkin, V. Bessolov, 1993 .

Nanoindentation of GaN/SiC thin films on silicon substrate

S. Kukushkin, A. Redkov, A. S. Grashchenko, 2017 .

Initial stages of growth of diamond island films on crystalline silicon

S. A. Grudinkin, V. Afanas’ev, N. Feoktistov, 2002 .

Mechanisms of epitaxial growth of SiC films by the method of atom substitution on the surfaces (100) and (111) of Si single crystals and on surfaces of Si films grown on single crystals Al2O3

S. Kukushkin, A. Osipov, 2018, IOP Conference Series: Materials Science and Engineering.

Carrier mobility in undoped SiC layers grown on silicon by a new epitaxial technique

S. Kukushkin, N. Feoktistov, S. Obukhov, 2013 .

Photoemission Studies of the Electronic Structure of GaN Grown by Plasma Assisted Molecular Beam Epitaxy

S. Kukushkin, G. Benemanskaya, A. Mizerov, 2019, Physics of the Solid State.

Infrared spectroscopy of silicon carbide layers synthesized by the substitution of atoms on the surface of single-crystal silicon

S. A. Grudinkin, S. Kukushkin, V. Golubev, 2015 .

Magnetic Properties of Thin Epitaxial SiC Layers Grown by the Atom-Substitution Method on Single-Crystal Silicon Surfaces

S. Kukushkin, L. Klyachkin, A. Malyarenko, 2021, Semiconductors.

Nucleation of CdSe thin films: the kinetic model

S. Kukushkin, A. Redkov, A. Koryakin, 2018, Journal of Physics: Conference Series.

Coating of a Nanostructured Profiled Si Surface with a SiC Layer

S. Kukushkin, A. S. Grashchenko, A. Osipov, 2020, Technical Physics Letters.

Misfit dislocation locking and rotation during gallium nitride growth on SiC/Si substrates

S. Kukushkin, V. Bessolov, E. Konenkova, 2017, Physics of the Solid State.

Initial stages of the GaN growth on oxidized silicon

S. Kukushkin, V. Bessolov, E. Konenkova, 2001 .

GaN growth via HVPE on SiC/Si substrates: growth mechanisms

S. Kukushkin, A. Redkov, S. Sharofidinov, 2017 .

Thin-film condensation processes

S. Kukushkin, S. A. Kukushkin, A. Osipov, 1998 .

Thermodynamics and kinetics of switching effects in ferroelectrics

A. V. Osipov, S. Kukushkin, S. A. Kukushkin, 2002 .

Terahertz emission from silicon carbide nanostructures

S. Kukushkin, L. Klyachkin, A. Malyarenko, 2023, Semiconductors.