H. Umeda

Thickness dependent integrity of gate oxide on SOI

S. Maegawa, T. Ipposhi, Y. Inoue, 2003 .

Layout-Independent Transistor with Stress-Controlled and Highly Manufacturable Shallow Trench Isolation Process

Y. Inoue, T. Yamashita, Y. Horiba, 2007 .

Vox/Eox-Driven Breakdown of Ultrathin SiON Gate Dielectrics in p-Type Metal Oxide Semiconductor Field Effect Transistors under Low-Voltage Inversion Stress

J. Yugami, H. Umeda, S. Tsujikawa, 2007 .

Control of Nitrogen Depth Profile and Chemical Bonding State in Silicon Oxynitride Films Formed by Radical Nitridation

Tadahiro Ohmi, Shimpei Tsujikawa, Akinobu Teramoto, 2005 .

X-ray Photoelectron Spectroscopic Study of Nitrogen Depth Profile in Radical Nitrided Silicon Oxynitride Film

T. Ohmi, T. Hattori, A. Teramoto, 2007 .

Control of Nitrogen Depth Profile near Silicon Oxynitride/Si(100) Interface Formed by Radical Nitridation

T. Ohmi, T. Hattori, S. Sugawa, 2006 .

Time-dependent dielectric breakdown of SiO2 films in a wide electric field range

H. Umeda, Y. Ohno, K. Kobayashi, 2001, Microelectron. Reliab..

XPS Study of H-Terminated Silicon Surface under Inert Gas and UHV Annealing

A. Teramoto, H. Umeda, M. Inoue, 2005 .

Study of oxide breakdown under very low electric field

K. Shiga, Akinobu Teramoto, K. Azamawari, 1999, 1999 IEEE International Reliability Physics Symposium Proceedings. 37th Annual (Cat. No.99CH36296).

Precise Control of Nitrogen Profiles and Nitrogen Bond States for Highly Reliable N 2 O ‐ Grown Oxynitride

H. Sayama, A. Teramoto, H. Tamura, 2000 .

Densification of chemical vapor deposition silicon dioxide film using oxygen radical oxidation

T. Ohmi, T. Hattori, A. Teramoto, 2012 .