T. Ushiki

Tantalum nitride metal gate FD-SOI CMOS FETs using low resistivity self-grown bcc-tantalum layer

T. Ohmi, S. Sugawa, H. Shimada, 2001 .

New aspects and mechanism of kink effect in static back-gate transconductance characteristics in fully-depleted SOI MOSFETs on high-dose SIMOX wafers

T. Ohmi, K. Kotani, T. Ushiki, 2000 .

Gate oxide reliability concerns in gate-metal sputtering deposition process: an effect of low-energy large-mass ion bombardment

T. Ohmi, Mo-Chiun Yu, M. Morita, 1999 .

Improvement of gate oxide reliability for tantalum-gate MOS devices using xenon plasma sputtering technology

T. Ohmi, Mo-Chiun Yu, M. Morita, 1998 .

Reduction of plasma-induced gate oxide damage using low-energy large-mass ion bombardment in gate-metal sputtering deposition

T. Ohmi, Mo-Chiun Yu, M. Morita, 1998, 1998 IEEE International Reliability Physics Symposium Proceedings. 36th Annual (Cat. No.98CH36173).

Ion energy, ion flux, and ion species effects on crystallographic and electrical properties of sputter-deposited Ta thin films

T. Ohmi, T. Ushiki, T. Shinohara, 1997 .

Chemical reaction concerns of gate metal with gate dielectric in Ta gate MOS devices: an effect of self-sealing barrier configuration interposed between Ta and SiO/sub 2/

T. Ohmi, I. Ohshima, T. Ushiki, 2000 .

Threshold voltage adjustment in SOI MOSFETs by employing tantalum for gate material

T. Ohmi, H. Shimada, T. Ushiki, 1995, Proceedings of International Electron Devices Meeting.

Tantalum-gate thin-film SOI nMOS and pMOS for low-power applications

Tadahiro Ohmi, T. Ushiki, Hisayuki Shimada, 1997 .

Reliable tantalum-gate fully-depleted-SOI MOSFET technology featuring low-temperature processing

Tadahiro Ohmi, Mizuho Morita, T. Ushiki, 1997 .

Improving Accuracy of Planar Tracking by Resolving Resolution Inconsistencies

Takayuki Okatani, Eisuke Ito, Tomohiro Ushiki, 2013, IPSJ Trans. Comput. Vis. Appl..