K. Sekine

发表

Highly robust ultrathin silicon nitride films grown at low-temperature by microwave-excitation high-density plasma for giga scale integration

T. Ohmi, Y. Saito, M. Hirayama, 2000 .

Silicon nitride film growth for advanced gate dielectric at low temperature employing high-density and low-energy ion bombardment

T. Ohmi, M. Hirayama, K. Sekine, 1999 .

Device performance of sub-50 nm CMOS with ultra-thin plasma nitrided gate dielectrics

Y. Tsunashima, T. Yamamoto, H. Ishiuchi, 2002, Digest. International Electron Devices Meeting,.

Transition of erase mechanism for MONOS memory depending on SiN composition and its impact on cycling degradation

N. Yasuda, K. Sekine, S. Fujii, 2010, 2010 IEEE International Reliability Physics Symposium.

The Growth of Thin Silicon Oxide and Silicon Nitride Films at Low Temperature (400 $^{\circ}{\hbox{C}}$ ) and High Growth Rates for Semiconductor Device Fabrication by an Advanced Low Electron Temperature Microwave-Excited High-Density Plasma System

R. Kaihara, T. Ohmi, S. Sugawa, 2010, IEEE Transactions on Semiconductor Manufacturing.

Behavior of incorporated nitrogen in plasma-nitrided silicon oxide formed by chemical vapor deposition

S. Onoue, K. Sekine, R. Fujitsuka, 2016 .

Practical Work Function Tuning Based on Physical and Chemical Nature of Interfacial Impurity in Ni-FUSI/SiON and HfSiON Systems

M. Sato, J. Koga, Y. Tsuchiya, 2006, 2006 International Electron Devices Meeting.

Highly reliable ultrathin silicon oxide film formation at low temperature by oxygen radical generated in high-density krypton plasma

T. Ohmi, Y. Saito, M. Hirayama, 2001 .

Universal thermal activation process and current induced degradation on dielectric breakdown in HfSiO(N)

M. Takayanagi, K. Eguchi, I. Hirano, 2004 .

Improvement of turbomolecular pumps for ultraclean, low-pressure, and high-gas-flow processing

T. Shibata, T. Ohmi, K. Sekine, 1998 .

Fabrication of HfSiON gate dielectrics by plasma oxidation and nitridation, optimized for 65 nm mode low power CMOS applications

Y. Tsunashima, M. Takayanagi, M. Sato, 2003, 2003 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.03CH37407).

Effects of Electron Current and Hole Current on Dielectric Breakdown in HfSiON Gate Stacks

M. Takayanagi, K. Eguchi, I. Hirano, 2012 .

Low-Temperature Formation of Silicon Nitride Film by Direct Nitridation Employing High-Density and Low-Energy Ion Bombardment

T. Ohmi, M. Hirayama, K. Sekine, 1999 .

Low-temperature growth of high-integrity silicon oxide films by oxygen radical generated in high-density krypton plasma

M. Hirayama, K. Sekine, T. Ohmi, 1999, International Electron Devices Meeting 1999. Technical Digest (Cat. No.99CH36318).

Physical origin of suppressed effective work function modulation at boron segregated NiSi∕SiON interface

J. Koga, A. Nishiyama, Y. Tsuchiya, 2008 .

High-integrity ultra-thin silicon nitride film grown at low temperature for extending scaling limit of gate dielectric

T. Ohmi, Y. Saito, M. Hirayama, 1999, 1999 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.99CH36325).

Time-dependent dielectric breakdown (TDDB) distribution in n-MOSFET with HfSiON gate dielectrics under DC and AC stressing

Masakazu Goto, Kikuo Yamabe, Yuichiro Mitani, 2013, Microelectron. Reliab..

Impact of Polarity of Gate Bias and Hf Concentration on Breakdown of HfSiON/ $\hbox{SiO}_{2}$ Gate Dielectrics

Y. Tsunashima, M. Sato, K. Eguchi, 2007, IEEE Transactions on Electron Devices.

Native Oxide Growth Behavior on Silicon Surface with Various Resistivity in Ultrapure Water and CuF 2 Solution

T. Ohmi, K. Sekine, Yuji Saito, 1997 .

Influence of Traps and Carriers on Reliability in HfSiON/ $\hbox{SiO}_{2}$ Stacks

Y. Mitani, I. Hirano, K. Sekine, 2009, IEEE Transactions on Device and Materials Reliability.

Effects of Nitrogen Concentration and Post-treatment on Reliability of HfSiON Gate Dielectrics in Inversion States

Yoshitaka Tsunashima, Kazuhiro Eguchi, Katsuyuki Sekine, 2005 .

Nitrogen profile control by plasma nitridation technique for poly-Si gate HfSiON CMOSFET with excellent interface property and ultra-low leakage current

K. Sekine, S. Inumiya, Y. Tsunashima, 2003, IEEE International Electron Devices Meeting 2003.

Advantage of radical oxidation for improving reliability of ultra-thin gate oxide

T. Ohmi, S. Sugawa, M. Hirayama, 2000, 2000 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.00CH37104).

Thermochemical understanding of dielectric breakdown in HfSiON with current acceleration

T. Yamaguchi, I. Hirano, M. Takayanagi, 2005, 2005 IEEE International Reliability Physics Symposium, 2005. Proceedings. 43rd Annual..

Novel TDDB mechanism for p-FET accelerated by hydrogen from HfSiON film

I. Hirano, Y. Mitani, Y. Nakasaki, 2010, 2010 IEEE International Reliability Physics Symposium.

Impact of Very Low Hf Concentration (Hf=6%) Cap Layer on Performance and Reliability Improvement of HfSiON -CMOSFET with EOT Scalable to 1nm

Y. Tsunashima, M. Sato, K. Eguchi, 2006, 2006 International Electron Devices Meeting.

Physical Understanding of Gate-Depletion Phenomena in Poly-Si/HfSiON Stacks Based on $C$–$V$ Differentiation Analysis

M. Saitoh, T. Saito, K. Sekine, 2007, IEEE Transactions on Electron Devices.