C. Bjorkman

发表

Integration of wet-chemical processing with low-temperature plasma-assisted processes for the formation of device-quality Si/SiO 2 interfaces on Si(111) surfaces

H. Kurz, G. Lucovsky, T. Yasuda, 1994 .

A Low-Temperature Process for Device Quality Si/SiO 2 Interfaces on Si(111)

H. Kurz, G. Lucovsky, T. Yasuda, 1993 .

Minimizing charge-up damage during dielectric etchers hardware and process development stages

J. Werking, R. Lindley, D. Galley, 1999, 1999 4th International Symposium on Plasma Process-Induced Damage (IEEE Cat. No.99TH8395).

Chemical Stability of SC1-Cleaned Hydrogen Terminated Si(100) Surfaces

M. Hirose, C. Bjorkman, J. Alay, 1995 .

Correlation between midgap interface state density and thickness‐averaged oxide stress and strain at Si/SiO2 interfaces formed by thermal oxidation of Si

J. T. Fitch, G. Lucovsky, C. H. Bjorkman, 1990 .

The Influence of Crystal Orientation and Processing Conditions on the Energy Distribution of Traps at the Si-SiO2 Interface

G. Lucovsky, T. Yasuda, Y. Ma, 1993 .

The effect of post-deposition thermal processing on MOS gate oxides formed by remote PECVD

G. Lucovsky, C. Bjorkman, S. S. Kim, 1990 .

Influence of surface roughness on the electrical properties of Si–SiO2 interfaces and on second‐harmonic generation at these interfaces

H. Kurz, G. Lucovsky, T. Yasuda, 1993 .

Chemically Modified Second Harmonic Generation at Surfaces on Vicinal Si(111) Wafers

H. Kurz, G. Lucovsky, T. Yasuda, 1992 .

Analysis of infrared attenuated total reflection spectra from thin SiO2 films on Si

S. Miyazaki, M. Hirose, C. Bjorkman, 1995 .

Second‐harmonic generation in Si–SiO2 heterostructures formed by chemical, thermal, and plasma‐assisted oxidation and deposition processes

H. Kurz, G. Lucovsky, T. Yasuda, 1993 .

Infrared Spectra of Ultra-Thin SiO2 Grown on Si Surfaces

S. Miyazaki, M. Hirose, C. Bjorkman, 1993 .

Optical anisotropy of singular and vicinal Si–SiO2 interfaces and H‐terminated Si surfaces

G. Lucovsky, T. Yasuda, D. Aspnes, 1994 .

Intrinsic stress and stress gradients at the SiO2/Si interface in structures prepared by thermal oxidation of Si and subjected to rapid thermal annealing

Fred H. Pollak, J. T. Fitch, G. Lucovsky, 1989 .

Atomic Scale Morphology of Hydrogen-Terminated Si(100) Surfaces Studied by Fourier-Transform Infrared Attenuated Total Reflection Spectroscopy and Scanning Probe Microscopies

S. Miyazaki, M. Hirose, C. Bjorkman, 1995 .

Understanding the evolution of trench profiles in the via-first dual damascene integration scheme

C. Bjorkman, B. Tang, T. Kropewnicki, 2001 .

Magnetic field optimization in a dielectric magnetically enhanced reactive ion etch reactor to produce an instantaneously uniform plasma

R. Lindley, C. Bjorkman, H. Shan, 1998 .

Deposition of Heavily-Doped μc-Silicon Thin Films by Remote Plasma-Enhanced Chemical-Vapor Deposition Process (remote PECVD)

M. J. Williams, G. Lucovsky, C. Bjorkman, 1990 .

Local atomic structure at thermally grown Si/SiO2 interfaces

G. Lucovsky, F. Pollak, C. Bjorkman, 1989 .

Deconvolution of Thickness-Averaged Structural and Optical Properties of Thermally Grown and Rpecvd SiO 2 Films

G. Lucovsky, C. Bjorkman, C. Shearon, 1993 .

The Effects of Intrinsic In-Plane Stress on the Local Atomic Structure of Thermally Grown SiO 2

G. Lucovsky, C. Bjorkman, J. Fitch, 1988 .

Strain Dependent Diffusion During Dry Thermal Oxidation of Crystalline Si

G. Lucovsky, C. Bjorkman, 1993 .