B. Freer

发表

X-Ray Scattering Studies of Sio X /Si/Ge(001)

C. Hsu, P. Pershan, S. Kosowsky, 1993 .

X‐ray scattering studies of the SiO2/Si(001) interfacial structure

P. Pershan, J. Bevk, B. Freer, 1991 .

Cooperative quantum confinement of excitons bound to isoelectronic impurity complexes in Si1−xGex/Si superlattices

D. Hall, J. Bevk, B. Freer, 1991 .

Isoelectronic bound exciton emission from Si‐rich silicon‐germanium alloys

L. Feldman, D. Hall, B. Weir, 1990 .

The effect of dose rate on ion implanted impurity profiles in silicon

C. Magee, B. Freer, A. Tasch, 1996 .

An X-ray scattering study of SiOx/Si/Ge(001)

P. Pershan, S. Kosowsky, J. Bevk, 1995 .

X‐ray reflectivity studies of SiO2/Si(001)

P. Pershan, J. Bevk, B. Freer, 1991 .

Native oxidation of the Si(001) surface: Evidence for an interfacial phase

A. Ourmazd, G. Renaud, P. Hahn, 1991 .

EFFECT OF IMPLANT TEMPERATURE ON TRANSIENT ENHANCED DIFFUSION OF BORON IN REGROWN SILICON AFTER AMORPHIZATION BY SI+ OR GE+ IMPLANTATION

B. Freer, K. Jones, L. Rubin, 1997 .

Magnetoresistance and the spin flop transition in pure single - Crystal La2CuO4+y

M. Kastner, R. Birgeneau, T. Thio, 1989 .

Low‐temperature homoepitaxy on Si(111)

L. Feldman, B. Weir, D. Eaglesham, 1991 .

Ordered monolayer structures of boron in Si(111) and Si(100)

L. Feldman, B. Weir, A. Levi, 1991 .

An examination of the effect of dose rate on ion implanted impurity profiles in silicon

C. Magee, B. Freer, A. Tasch, 1995 .