A. Goryachko

发表

Influence of N2/H2 plasma treatment on chemical vapor deposited TiN multilayer structures for advanced CMOS technologies

E. Bugiel, D. Krüger, V. Melnik, 2003 .

The interaction of Pr2O3 with 4H-SiC(0001) surface

D. Schmeißer, A. Goryachko, I. Paloumpa, 2004 .

The Si(001)/C2H2 interaction to form a buffer layer for 3C-SiC growth

D. Schmeißer, K. Henkel, A. Goryachko, 2004 .

Oxynitrides on 4H–SiC(0 0 0 1)

D. Schmeißer, P. Hoffmann, A. Goryachko, 2005 .

New features of the Si()-c(4×4) reconstruction observed with STM: suggestion of the structure with lowered symmetry

A. Goryachko, P. Melnik, I. F. Koval', 2002 .

Development of spectroscopic ellipsometry as in-line control for Co SALICIDE process

D. Bolze, D. Wolansky, B. Tillack, 2004 .

Characterization of Ge gradients in SiGe HBTs by AES depth profile simulation

B. Tillack, D. Krüger, A. Goryachko, 2004 .

Improved Auger electron spectroscopy sputter depth profiling of W/WNx and WSix layers on Si substrates

R. Kurps, G. Weidner, D. Krüger, 2001 .

Thermal stability of Pr2O3 films grown on Si(100) substrate

R. Kurps, E. Bugiel, D. Krüger, 2002 .

Spectroscopic ellipsometry for in-line process control of SiGe:C HBT technology

Yuji Yamamoto, Bernd Tillack, D. Krüger, 2005 .

Scanning Kelvin probe and photoemission electron microscopy of organic source-drain structures

Juergen Reif, Carola Schwiertz, Klaus Müller, 2004 .

Microscopic and spectroscopic characterization of interfaces and dielectric layers for OFET devices

D. Schmeißer, K. Henkel, K. Müller, 2008 .