D. U. Lee

发表

Irradiation-induced shrinkage and expansion mechanisms of SiO2 circle membrane nanopores

T. W. Kim, J. Shin, J. Y. Lee, 2009, Nanotechnology.

Microstructural and optical properties of InAs/GaAs quantum dots embedded in modulation-doped AlxGa1-xAs/GaAs heterostructures

Junyeong Lee, T. W. Kim, D. U. Lee, 2002 .

Microstructural, electrical, and optical properties of SnO2 nanocrystalline thin films grown on InP (100) substrates for applications as gas sensor devices

Y. Yoon, T. W. Kim, D. U. Lee, 2000 .

Microstructural and optical properties of ZnO thin films grown on InSb (111) substrates

Y. Yoon, T. W. Kim, Jihoon Lee, 2001 .

Efficiency stabilization in deep-blue organic light-emitting devices with a double emitting layer acting as electron and hole trapping layers

Young Kwan Kim, Seulki Han, D. U. Lee, 2008 .

Improvement of the crystallinity in PbTiO3 films grown on indium tin oxide-coated glass by metalorganic chemical vapor deposition using the continuous cooling process

Y. Yoon, S. Yom, Chan-soo Kim, 1996 .

Structural and optical properties of PbTiO3 films grown on indium tin oxide-coated glass by metalorganic chemical vapor deposition using the continuous cooling process

Y. Yoon, S. Yom, T. W. Kim, 1995 .

The dependence of the electron carrier occupation in the subband on the As mole fraction in modulation-doped InAsxP1-x/InP strained single quantum wells

Jae-Hwan Kim, T. W. Kim, D. U. Lee, 1998 .

MAGNETOTRANSPORT, MAGNETO-OPTICAL, AND ELECTRONIC SUBBAND STUDIES IN INXGA1-XAS/INYAL1-XAS MODULATION-DOPED STRAINED DOUBLE QUANTUM WELLS

K. Yoo, T. W. Kim, Jeongyong Lee, 1997 .

Electronic property variations due to an embedded potential barrier layer in modulation-doped step quantum wells

Tae Whan Kim, B. McCombe, K. Yoo, 2002 .

Microstructural and electronic properties of Ni thin films grown on p-InP (100) substrates

Y. Yoon, K. Yoo, D. U. Lee, 2002 .

Enhancement of the intersubband Stark effect in strained InxGa1−xAs/InyAl1−yAs asymmetric coupled double quantum wells

T. W. Kim, D. U. Lee, 2000 .

Strain effects in lattice-mismatched InxGa1-xAs/InyAl1-yAs coupled double quantum wells

Tae Whan Kim, Juno Lee, D. U. Lee, 1998 .

Microstructural, magnetotransport, and electronic subband studies of InAs

D. U. Lee, S. O. Kang, Taewhan Kim, 2002 .

Existence and atomic arrangement of the CuPt-type ordered structure near the ZnTe/GaAs heterointerface due to residual impurities

T. W. Kim, Jeongyong Lee, H. Park, 2001 .

The dependence of the carrier density and the mobility on the spacer-layer thickness in modulation-doped AlxGa1−xAs/InyGa1−yAs/GaAs asymmetric single quantum wells

Hye Jin Lim, D. Kim, T. W. Kim, 2001 .

Microstructural and interfacial properties of the Ru/p-InP(100) heterostructures

Y. Yoon, T. W. Kim, Jihoon Lee, 2001 .

Electronic parameters of the two-dimensional electron gas in modulation- doped single quantum wells due to an embedded deep step layer

B. McCombe, K. Yoo, T. W. Kim, 2001 .

The dependence of the exciton transition and the Fermi energy on the InyGa1−yAs well width in modulation-doped AlxGa1−xAs/InyGa1−yAs/GaAs strained single quantum wells

D. U. Lee, Junyeong Lee, H. Kim, 2000 .

Lattice mismatch and atomic structure studies on InxGa1−xAs/InyAl1−yAs coupled double-step quantum wells

T. W. Kim, D. U. Lee, Junyeong Lee, 2000 .

The interfacial layer formation of the Ag/InP heterointerfaces

Y. Yoon, T. W. Kim, D. U. Lee, 1998 .

Magnetotransport, magneto‐optical, and electronic subband studies in InxGa1−xAs/In0.52Al0.48As one‐side‐modulation‐doped asymmetric step quantum wells

K. Yoo, T. W. Kim, D. U. Lee, 1996 .

Determination of the subband carrier densities in a strained GaAs/In0.15Ga0.85As/Al0.22Ga0.78As single quantum well using photoluminescence

T. W. Kim, D. U. Lee, M. Jung, 1996 .

Effect of thermal annealing in the microstructural and the optical properties of uncapped InAs quantum dots grown on GaAs buffer layers

T. W. Kim, D. U. Lee, M. D. Kim, 2005 .

Strain effects and atomic arrangements of 60° and 90° dislocations near the ZnTe/GaAs heterointerface

Tae Whan Kim, Hyunki Lee, H. Park, 2001 .

Microstructural and interband transition properties of vertically stacked InAs/GaAs self-assembled quantum dots embedded in modulation-doped heterostructures

Hyunki Lee, T. W. Kim, D. U. Lee, 2001 .

Microstructural and interband transition studies of multiple stacked layers of Si-doped InAs self-assembled quantum dot arrays inserted into GaAs barriers

Hong-Lee Park, D. U. Lee, H. Kim, 2001 .

Formation mechanism of ZnSiO3 nanoparticles embedded in an amorphous interfacial layer between a ZnO thin film and an n-Si (001) substrate due to thermal treatment

J. Yuk, Jeongyong Lee, J. Jung, 2008 .

Formation mechanism of CdTe self-assembled quantum dots embedded into ZnTe barriers

T. W. Kim, H. Park, D. U. Lee, 2002 .

Coalescence and electron activation energy in CdTe/ZnTe nanostructures

T. W. Kim, H. Park, D. U. Lee, 2002 .

Microstructural and optical studies of multiply stacked CdSe/ZnSe quantum-dot structures with a large ZnSe spacer thickness

J. Furdyna, T. W. Kim, S. Lee, 2002 .

Optical parameters in SnO2 nanocrystalline textured films grown on p-InSb (111) substrates

Y. Yoon, T. W. Kim, H. Park, 2002 .

Structural and optical properties of undoped and doped ZnSe/GaAs strained heterostructures

T. W. Kim, Sungsam Lee, Hyung-seok Park, 1997 .

Structural properties of lattice matched Zn0.92Mg0.08S0.12Se0.88/GaAs heterostructures

Hyoung-Min Park, T. W. Kim, D. U. Lee, 1999 .

Dependence of the activation energies on the well width in CdTe/ZnTe strained single quantum wells

T. W. Kim, H. Park, D. U. Lee, 2002 .

Dependence of optical gain and interband transitions on the CdTe well width and temperature for CdTe/ZnTe single quantum wells

J. T. Woo, H. L. Park, J. H. You, 2009 .

Structural, electrical, and optical properties of SnO2 nanocrystalline thin films grown on p-InSb (111) substrates

Y. Yoon, T. W. Kim, Jihoon Lee, 2001 .

Dependence of the structural, the electrical, and the optical properties on the Ar/O2 flow-rate ratios for SnO2 thin films grown on p-InP (1 0 0) substrates at low temperature

Y. Yoon, T. W. Kim, Jihoon Lee, 2001 .

Atomic arrangements of a CuAu-I type ordered structure in strained InxGa1 − xAs/InyAl1 − yAs multiple quantum wells

J. Y. Lee, T. W. Kim, D. U. Lee, 2005 .

Atomic arrangements and formation mechanisms of the CuPt-type ordered structure in CdxZn1−xTe epilayers grown on GaAs substrates

T. W. Kim, H. Park, D. U. Lee, 2001 .

Existence of a CuAu-I-type ordered structure in lattice-mismatched InxGa1-xAs/InyAl1-yAs multiple quantum wells

T. W. Kim, D. U. Lee, Junyeong Lee, 2001 .

Coexisting phenomena of the CuPt-type and the Cu3Au-type ordered structures near ZnTe/ZnSe heterointerfaces in ZnxCd1-xTe/ZnSySe1-y quantum wells

T. W. Kim, Jeongyong Lee, D. U. Lee, 2001 .

The role and mechanism of a ZnTe buffer layer on the structural properties of the strained CdxZn1-xTe/ZnTe double quantum wells

T. W. Kim, Jeongyong Lee, H. Park, 1998 .

Simultaneous existence and atomic arrangement of CuPt-type and CuAu-I type ordered structures near ZnTe/ZnSe heterointerfaces

Tae Whan Kim, D. U. Lee, H. S. Lee, 2002 .

Coexistence behavior of the CuPtB-type and the CuAu–I-type ordered structures in highly strained CdxZn1−xTe/GaAs heterostructures

Tae Whan Kim, H. Park, D. U. Lee, 2001 .

Microstructural and optical properties of SnO2 thin films grown on heavily doped n-InP(100) substrates

Y. Yoon, T. W. Kim, D. U. Lee, 2001 .

Charge transfer and electronic subband studies in a strained In0.15Ga0.85As/Al0.22Ga0.78As single quantum well

T. W. Kim, D. U. Lee, T. H. Park, 1996 .

Surface and microstructural properties of SnO2 thin films grown on p-InP (100) substrates at low temperature

Y. Yoon, T. W. Kim, D. U. Lee, 2000 .

Magnetic properties of Mn+-implanted and annealed Si1−xGex thin films grown on p-Si (100) substrates

T. Kang, D. U. Lee, D. Fu, 2008 .