Jisheng Han

发表

Anchoring ultra-fine TiO2–SnO2 solid solution particles onto graphene by one-pot ball-milling for long-life lithium-ion batteries

M. Ling, Jingxia Qiu, Sheng Li, 2015 .

Mechanism of Threshold Voltage Shift in ${p}$ -GaN Gate AlGaN/GaN Transistors

H. A. Moghadam, S. Dimitrijev, Baikui Li, 2018, IEEE Electron Device Letters.

Transition between amorphous and crystalline phases of SiC deposited on Si substrate using H3SiCH3

F. Iacopi, S. Dimitrijev, J. Zou, 2009 .

Pseudo-Hall Effect in Single Crystal n-Type 3C-SiC(100) Thin Film

A. Iacopi, S. Dimitrijev, D. Dao, 2017 .

Thickness dependence of the piezoresistive effect in p-type single crystalline 3C-SiC nanothin films

S. Dimitrijev, G. Walker, Li Wang, 2014 .

Experimental Investigation of Piezoresistive Effect in p-Type 4H–SiC

S. Dimitrijev, N. Nguyen, Yong Zhu, 2017, IEEE Electron Device Letters.

Utilizing large hall offset voltage for conversion free 4H-SiC strain sensor

N. Nguyen, Yong Zhu, D. Dao, 2018, 2018 IEEE Micro Electro Mechanical Systems (MEMS).

Highly sensitive p-type 4H-SiC van der Pauw sensor

S. Dimitrijev, N. Nguyen, D. Dao, 2018 .

Orientation dependence of the pseudo-Hall effect in p-type 3C-SiC four-terminal devices under mechanical stress

S. Dimitrijev, Li Wang, N. Nguyen, 2015 .

The effect of device geometry and crystal orientation on the stress-dependent offset voltage of 3C–SiC(100) four terminal devices

S. Dimitrijev, Li Wang, D. Dao, 2015 .

Pseudo-Hall effect in single crystal 3C-SiC(111) four-terminal devices

S. Dimitrijev, Li Wang, D. Dao, 2015 .

High temperature silicon-carbide-based flexible electronics for monitoring hazardous environments.

D. Dao, Hoang‐Phuong Phan, T. Dinh, 2020, Journal of hazardous materials.

The Power Law of Phonon-Limited Electron Mobility in the 2-D Electron Gas of AlGaN/GaN Heterostructure

Sima Dimitrijev, Jisheng Han, Xiangang Xu, 2016, IEEE Transactions on Electron Devices.

Demonstration of Electron/Hole Injections in the Gate of $p$-GaN/AlGaN/GaN Power Transistors and Their Effect on Device Dynamic Performance

S. Dimitrijev, N. Nguyen, Baikui Li, 2019, 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD).

Impact of carrier injections on the threshold voltage in p-GaN gate AlGaN/GaN power HEMTs

H. A. Moghadam, S. Dimitrijev, N. Nguyen, 2019, Applied Physics Express.

Effect of Hole-Injection on Leakage Degradation in a $p$ -GaN Gate AlGaN/GaN Power Transistor

H. A. Moghadam, S. Dimitrijev, Baikui Li, 2018, IEEE Electron Device Letters.

Mechanism of leakage current increase in p-GaN gate AlGaN/GaN power devices induced by ON-state gate bias

H. A. Moghadam, S. Dimitrijev, Baikui Li, 2018, Japanese Journal of Applied Physics.

Dependence of offset voltage in AlGaN/GaN van der Pauw devices under mechanical strain

H. A. Moghadam, S. Dimitrijev, N. Nguyen, 2019, Materials Letters.

A facile one-step preparation of hierarchically-structured TiO2 nanotube array photoanodes with enhanced photocatalytic activity

Porun Liu, Huijun Zhao, Jingxia Qiu, 2011 .

Energy-Localized Near-Interface Traps Active in the Strong-Accumulation Region of 4H-SiC MOS Capacitors

S. Dimitrijev, P. Tanner, Jisheng Han, 2019, IEEE Transactions on Electron Devices.

Hydrogen incorporation dependence on the thermal growth route in dielectric/SiC structures

S. Dimitrijev, G. Soares, F. Stedile, 2013 .

Influence of various NO annealing conditions on N-type and P-type 4H-SiC MOS capacitors

S. Dimitrijev, Yuming Zhang, Hongliang Lv, 2019, Journal of Materials Science: Materials in Electronics.

Growth and characterization of nitrogen-phosphorus hybrid passivated gate oxide film on N-type 4H-SiC epilayer

S. Dimitrijev, Yuming Zhang, Hongliang Lv, 2019, Journal of Crystal Growth.

Enhanced photoelectroctatlytic performance of etched 3C–SiC thin film for water splitting under visible light

S. Dimitrijev, William Wen, Yazhou Wang, 2014 .

Characterization of Non-Equilibrium Charge of MOS Capacitors on p-Type 4H SiC

S. Dimitrijev, K. Cheong, Jisheng Han, 2004 .

Chemically derived graphene quantum dots for high-strain sensing

M. Lobino, Shujun Wang, P. Tanner, 2022, Journal of Materials Science & Technology.

Simulation of a Short-Channel 4H-SiC UMOSFET with Buried p Epilayer for Low Oxide Electric Field and Switching Loss

S. Dimitrijev, Z. Wen, Zhanwei Shen, 2018, 2018 1st Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia).

Power-switching applications beyond silicon: Status and future prospects of SiC and GaN devices

Sima Dimitrijev, Hamid Amini Moghadam, Jisheng Han, 2015 .

Demonstration of p-type 3C-SiC grown on 150 mm Si(1 0 0) substrates by atomic-layer epitaxy at 1000 °C

A. Iacopi, L. Hold, S. Dimitrijev, 2011 .

Growth of 3C―SiC on 150-mm Si(100) substrates by alternating supply epitaxy at 1000 °C

A. Iacopi, L. Hold, S. Dimitrijev, 2011 .

Ultrathin Fe2O3 nanoflakes using smart chemical stripping for high performance lithium storage

S. Dimitrijev, Xingxing Gu, Yazhou Wang, 2017 .

Transient-Current Method for Measurement of Active Near-Interface Oxide Traps in 4H-SiC MOS Capacitors and MOSFETs

Sima Dimitrijev, Hamid Amini Moghadam, Daniel Haasmann, 2015, IEEE Transactions on Electron Devices.

Comparative study on slow-state near interface hole traps in NO and Ar annealed N-type 4H-SiC MOS capacitors by ultraviolet light

S. Dimitrijev, Yuming Zhang, Hongliang Lv, 2018, Journal of Materials Science: Materials in Electronics.

Growth of 2-inch diamond films on 4H–SiC substrate by microwave plasma CVD for enhanced thermal performance

Ming Li, Yan Peng, K. Cheong, 2023, Vacuum.

Deep void formation mechanism in Si(100) during its carbonization reaction with C2H2

S. Dimitrijev, Li Wang, J. Zou, 2007 .

High-Performance Diamond Phototransistor with Gate Controllable Gain and Speed.

Yan Peng, K. Cheong, Lei Ge, 2023, The journal of physical chemistry letters.

Nucleation growth mechanism of diamond on 4H-SiC substrate by microwave plasma chemical vapor deposition

Yan Peng, K. Cheong, Xiaotong Han, 2022, Materials Today Communications.

Temperature and doping dependence of the Raman scattering in 4H-SiC

S. Dimitrijev, Xiufang Chen, Xiaobo Hu, 2016 .

Description and Verification of the Fundamental Current Mechanisms in Silicon Carbide Schottky Barrier Diodes

S. Dimitrijev, P. Tanner, Jisheng Han, 2019, Scientific Reports.

Thermoresistance of p‐Type 4H–SiC Integrated MEMS Devices for High‐Temperature Sensing

S. Dimitrijev, N. Nguyen, D. Dao, 2019, Advanced Engineering Materials.

Ultra-high strain in epitaxial silicon carbide nanostructures utilizing residual stress amplification

A. R. Kermany, N. Nguyen, D. Dao, 2017, 1701.02791.

Power-switching applications beyond silicon: Status and future prospects of SiC and GaN devices

S. Dimitrijev, H. A. Moghadam, S. Dimitrijev, 2014, 2014 29th International Conference on Microelectronics Proceedings - MIEL 2014.

Robust TiO2/BDD heterojunction photoanodes for determination of chemical oxygen demand in wastewaters

Huijun Zhao, Jingxia Qiu, Shanqing Zhang, 2011 .

Surface-Passivation Effects on the Performance of 4H-SiC BJTs

Jisheng Han, S Dimitrijev, S. Dimitrijev, 2011, IEEE Transactions on Electron Devices.

Electrical characterization of SiC MOS capacitors: A critical review

H. A. Moghadam, S. Dimitrijev, P. Tanner, 2020 .

Active defects in MOS devices on 4H-SiC: A critical review

Sima Dimitrijev, Hamid Amini Moghadam, Jisheng Han, 2016, Microelectron. Reliab..

Charge Trapping Properties of 3C- and 4H-SiC MOS Capacitors With Nitrided Gate Oxides

peixiong zhao, L. Feldman, S. Dimitrijev, 2009, IEEE Transactions on Nuclear Science.

Effects of nitrogen incorporation on the interfacial layer between thermally grown dielectric films and SiC

L. Hold, S. Dimitrijev, C. Radtke, 2009 .

Sequential thermal treatments of SiC in NO and O2: Atomic transport and electrical characteristics

L. Hold, S. Dimitrijev, C. Radtke, 2007 .

Oxidation, MOS Capacitors, and MOSFETs

Kuan Yew Cheong, Sima Dimitrijev, Barry Harrison, 2004 .

Fabrication of Ohmic Contact on N-Type SiC by Laser Annealed Process: A Review

K. Cheong, Yingxin Cui, Xiangang Xu, 2023, Crystals.

Electrical and physical characterization of gate oxides on 4H-SiC grown in diluted N2O

H. B. Harrison, Kuan Yew Cheong, H. Barry Harrison, 2003 .

Charge retention in metal–oxide–semiconductor capacitors on SiC used as nonvolatile-memory elements

H. B. Harrison, Kuan Yew Cheong, H. Barry Harrison, 2002 .

The fabrication and characterization of 4H—SiC power UMOSFETs

Hui Guo, Qingwen Song, Yimen Zhang, 2013 .

Properties of Nitrided Oxides on SiC

H. B. Harrison, Kuan Yew Cheong, Sima Dimitrijev, 2004 .

A method for extraction of electron mobility in power HEMTs

H. A. Moghadam, S. Dimitrijev, G. Walker, 2015 .

The Role of Near-Interface Traps in Modulating the Barrier Height of SiC Schottky Diodes

S. Dimitrijev, P. Tanner, Jisheng Han, 2019, IEEE Transactions on Electron Devices.

Investigation of electron-hole generation in MOS capacitors on 4H SiC

Kuan Yew Cheong, Sima Dimitrijev, Jisheng Han, 2003 .

Direct Measurement of Active Near-Interface Traps in the Strong-Accumulation Region of 4H-SiC MOS Capacitors

Sima Dimitrijev, Daniel Haasmann, Philip Tanner, 2018, IEEE Journal of the Electron Devices Society.

Electrical Characteristics of Near-Interface Traps in 3C-SiC Metal–Oxide–Semiconductor Capacitors

Jisheng Han, S. Dimitrijev, S. Dimitrijev, 2008, IEEE Electron Device Letters.