J. Verma

发表

GaN Heterostructure Barrier Diodes Exploiting Polarization-Induced δ-Doping

D. Jena, H. Xing, P. Fay, 2014 .

GaN Heterostructure Barrier Diodes Exploiting Polarization-Induced $\delta$ -Doping

D. Jena, H. Xing, P. Fay, 2014, IEEE Electron Device Letters.

220-GHz Quaternary Barrier InAlGaN/AlN/GaN HEMTs

Yu Cao, Zongyang Hu, Tian Fang, 2011, IEEE Electron Device Letters.

Polarization-Engineering in III-V Nitride Heterostructures: New Opportunities For Device Design

Patrick Fay, Debdeep Jena, Yu Cao, 2010 .

Polarization-Induced GaN-on-Insulator E/D Mode p-Channel Heterostructure FETs

Yu Cao, A. Verma, Ronghua Wang, 2013, IEEE Electron Device Letters.

High breakdown single-crystal GaN p-n diodes by molecular beam epitaxy

D. Jena, H. Xing, P. Fay, 2015 .

Strained GaN quantum-well FETs on single crystal bulk AlN substrates

D. Jena, H. Xing, Pei Zhao, 2016, 1611.08914.

Enhancing Wall-Plug Efficiency for Deep-UV Light-Emitting Diodes: From Crystal Growth to Devices

D. Jena, H. Xing, V. Protasenko, 2019, Light-Emitting Diodes.

Molecular beam epitaxial growth of gallium nitride nanowires on atomic layer deposited aluminum oxide

D. Jena, T. Kosel, V. Protasenko, 2011 .

Metal‐face InAlN/AlN/GaN high electron mobility transistors with regrown ohmic contacts by molecular beam epitaxy

Yu Cao, D. Jena, H. Xing, 2011 .

MBE-Regrown Ohmics in InAlN HEMTs With a Regrowth Interface Resistance of 0 . 05 Ω · mm

Yu Cao, E. Beam, D. Jena, 2012 .

Presence and origin of interface charges at atomic-layer deposited Al2O3/III-nitride heterojunctions

Debdeep Jena, Huili Xing, Satyaki Ganguly, 2011 .

Erratum: “Presence and origin of interface charges at atomic-layer deposited Al2O3/III-nitride heterojunctions” [Appl. Phys. Lett. 99, 193504 (2011)]

D. Jena, H. Xing, T. Zimmermann, 2011 .

Plasma MBE growth conditions of AlGaN/GaN high-electron-mobility transistors on silicon and their device characteristics with epitaxially regrown ohmic contacts

D. Jena, H. Xing, J. Verma, 2014 .

Deep-UV emission at 219 nm from ultrathin MBE GaN/AlN quantum heterostructures

D. Jena, H. Xing, S. Rouvimov, 2017, 1704.08737.

MBE-grown 232–270 nm deep-UV LEDs using monolayer thin binary GaN/AlN quantum heterostructures

D. Jena, H. Xing, S. Rouvimov, 2016, 1610.05651.

Polarization-engineered N-face III–V nitride quantum well LEDs

D. Jena, V. Protasenko, J. Simon, 2010, 68th Device Research Conference.

Dual Optical Marker Raman Characterization of Strained GaN-channels on AlN Using AlN/GaN/AlN Quantum Wells and 15N Isotopes

D. Jena, H. Xing, V. Protasenko, 2015, 1502.00072.

Localized surface phonon polariton resonators in GaN

D. Jena, D. Wasserman, A. Hoffman, 2015, 2015 Conference on Lasers and Electro-Optics (CLEO).

GaN heterostructure barrier diodes (HBD) with polarization-induced delta-doping

D. Jena, H. Xing, P. Fay, 2013, 71st Device Research Conference.

Tunnel-injection quantum dot deep-ultraviolet light-emitting diodes with polarization-induced doping in III-nitride heterostructures

Debdeep Jena, P. K. Kandaswamy, Vladimir Protasenko, 2014 .

Nitride LEDs based on quantum wells and quantum dots

D. Jena, V. Protasenko, A. Verma, 2014 .

N-polar III-nitride quantum well light-emitting diodes with polarization-induced doping

Huili Grace Xing, Debdeep Jena, Vladimir Protasenko, 2011 .

Tunnel-injection GaN quantum dot ultraviolet light-emitting diodes

Huili Grace Xing, Debdeep Jena, Amit Verma, 2013 .

Strain sensitivity in the nitrogen 1s NEXAFS spectra of gallium nitride

D. Jena, H. Xing, C. Dubuc, 2014, 1408.6921.

MBE-Regrown Ohmics in InAlN HEMTs With a Regrowth Interface Resistance of 0.05 $\Omega\cdot\hbox{mm}$

Yu Cao, Xiang Gao, Ronghua Wang, 2012, IEEE Electron Device Letters.

Dispersion-free operation in InAlN-based HEMTs with ultrathin or no passivation

Huili Grace Xing, Ronghua Wang, O. Laboutin, 2013, 2013 IEEE International Electron Devices Meeting.

Time delay analysis in high speed gate-recessed E-mode InAlN HEMTs

G. Snider, E. Beam, D. Jena, 2013 .

InGaN Channel High-Electron-Mobility Transistors with InAlGaN Barrier and fT/fmax of 260/220 GHz

Yu Cao, Patrick Fay, Zongyang Hu, 2012 .

InGaN Channel High-Electron-Mobility Transistors with InAlGaN Barrier and f_{\text{T}}/f_{\text{max}} of 260/220 GHz

Yu Cao, G. Snider, D. Jena, 2013 .

Ultrathin Body GaN-on-Insulator Quantum Well FETs With Regrown Ohmic Contacts

Yu Cao, D. Jena, H. Xing, 2012, IEEE Electron Device Letters.

Two-dimensional electron gases in strained quantum wells for AlN/GaN/AlN double heterostructure field-effect transistors on AlN

D. Jena, H. Xing, V. Protasenko, 2014 .

Localized surface phonon polariton resonances in polar gallium nitride

D. Jena, D. Wasserman, A. Hoffman, 2015 .

AlGaN/GaN HEMTs on Si by MBE with regrown contacts and fT = 153 GHz

D. Jena, H. Xing, W. Hwang, 2014 .

Green luminescence of InGaN nanowires grown on silicon substrates by molecular beam epitaxy

Debdeep Jena, Vladimir Protasenko, Huili Xing, 2011 .

Comparison of Schottky Diodes on Bulk GaN substrates & GaN-on-Sapphire

D. Jena, H. Xing, Pei Zhao, 2013 .

Physics and polarization characteristics of 298 nm AlN-delta-GaN quantum well ultraviolet light-emitting diodes

Huili Grace Xing, Debdeep Jena, Cheng Liu, 2017 .

Ultra-thin Body GaN-on-insulator nFETs and pFETs: Towards III-nitride complementary logic

D. Jena, H. Xing, J. Verma, 2012, 70th Device Research Conference.

Barrier height, interface charge & tunneling effective mass in ALD Al2O3/AlN/GaN HEMTs

D. Jena, H. Xing, T. Zimmermann, 2011, 69th Device Research Conference.

Performance enhancement of InAlN/GaN HEMTs by KOH surface treatment

Zongyang Hu, Debdeep Jena, Huili Xing, 2014 .

Deep-UV LEDs using polarization-induced doping: Electroluminescence at cryogenic temperatures

D. Jena, H. Xing, S. Rouvimov, 2015, 2015 73rd Annual Device Research Conference (DRC).

Tunneling in III-V Nitrides

J. Verma, K. Karda, S. Ganguly, 2009 .