Yang Jiang
发表
Gate Leakage Suppression and Breakdown Voltage Enhancement in p-GaN HEMTs Using Metal/Graphene Gates
Hongyu Yu,
Guangnan Zhou,
R. Sokolovskij,
2019,
IEEE Transactions on Electron Devices.
Hongyu Yu,
Guangnan Zhou,
Gaiying Yang,
2021,
2102.03418.
Hongyu Yu,
Guangnan Zhou,
Yang Jiang,
2020,
IEEE Transactions on Electron Devices.
H. Yu,
Yu-Long Jiang,
Guangnan Zhou,
2020,
IEEE Electron Device Letters.
Hongyu Yu,
Guangnan Zhou,
Yang Jiang,
2020,
2020 4th IEEE Electron Devices Technology & Manufacturing Conference (EDTM).
X. Chen,
Zhongrui Wang,
Yinan Lin,
2022,
Micromachines.
Hongyu Yu,
Guangnan Zhou,
Gaiying Yang,
2021
.
Hongyu Yu,
Yu-Long Jiang,
Guangnan Zhou,
2019,
1902.00227.
Guangnan Zhou,
Yang Jiang,
Qing Wang,
2022,
IEEE Electron Device Letters.
Fangzhou Du,
Yang Jiang,
Qing Wang,
2022,
Crystals.
Fangzhou Du,
Guangnan Zhou,
Yang Jiang,
2022,
Materials Science in Semiconductor Processing.
P. Sarro,
Hongyu Yu,
R. Sokolovskij,
2020,
IEEE Sensors Journal.
H. Yu,
Gaiying Yang,
Yang Jiang,
2020,
IEEE Electron Device Letters.
Fangzhou Du,
Yang Jiang,
Qing Wang,
2022,
Applied Physics Letters.
P. Sarro,
R. Sokolovskij,
Yang Jiang,
2019,
2019 IEEE SENSORS.