J. Camassel

发表

Chapter 2 Raman Imaging in Semiconductor Physics : Applications to Microelectronic Materials and Devices

A. Tiberj, J. Camassel, 2018 .

Raman Imaging in Semiconductor Physics: Applications to Microelectronic Materials and Devices

A. Tiberj, J. Camassel, 2012 .

Determination of the effective mass of GaN from infrared reflectivity and Hall effect

W. Knap, P. Perlin, J. Camassel, 1996 .

Investigation of longitudinal‐optical phonon‐plasmon coupled modes in highly conducting bulk GaN

W. Knap, T. Taliercio, P. Perlin, 1995 .

4H-SiC: a material for high temperature Hall sensor

E. Neyret, J. Pernot, T. Billon, 2002 .

Wavelength Modulation Spectra and Electronic Band Structure of SnS2 and SnSe2

Marvin L. Cohen, Y. Shen, J. Camassel, 1976 .

SiC Base Micro-Probe for Myocardial Ischemia Monitoring

F. Valvo, J. Aguiló, P. Godignon, 2004 .

Electrical properties of the graphene/4H-SiC (0001) interface probed by scanning current spectroscopy

R. Yakimova, S. Sonde, F. Giannazzo, 2009 .

Depth profiling of high-energy hydrogen-implanted 6H-SiC.

D. J. Brink, J. Pascual, J. Camassel, 2004, Applied optics.

Oxidation Process by RTP for 4H-SiC MOSFET Gate Fabrication

P. Godignon, A. Constant, N. Camara, 2011 .

Comparative micro-photoluminescence investigation of ZnO hexagonal nanopillars and the seeding layer grown on 4H-SiC

M. Syväjärvi, R. Yakimova, G. Yazdi, 2012 .

Room Temperature Physical Characterization of Implanted 4H- and 6H-SiC

M. Androulidaki, K. Zekentes, K. Tsagaraki, 2012 .

Comparative investigation of ECR-RIE patterns on Si and C faces of 6H-SiC using a gas mixture

J. Bluet, R. Bonnot, J. Camassel, 1997 .

Temperature dependence of the fundamental absorption edge of mercury cadmium telluride

A. Bouhemadou, A. Lusson, J. Camassel, 1990 .

Growth of monolayer graphene on 8° off-axis 4H–SiC (000–1) substrates with application to quantum transport devices

P. Godignon, N. Mestres, N. Camara, 2010, 1007.2977.

Process Optimisation for <11-20> 4H-SiC MOSFET Applications

Dominique Tournier, Phillippe Godignon, Jean Camassel, 2006 .

Low Temperature Photoluminescence Investigation of 3-Inch SiC Wafers for Power Device Applications

A. Henry, P. Brosselard, S. Juillaguet, 2012 .

Optical investigation methods for SiC device development: application to stacking faults diagnostic in active epitaxial layers

S. Juillaguet, J. Camassel, 2007 .

PECVD Deposited TEOS for Field-Effect Mobility Improvement in 4H-SiC MOSFETs on the (0001) and (11-20) Faces

P. Godignon, N. Mestres, A. Pérez‐Tomás, 2006 .

Impact of Annealing Temperature Ramps on the Electrical Activation of N+ and P+ Co-Implanted SiC Layers

P. Godignon, N. Mestres, J. Camassel, 2006 .

Early stage formation of graphene on the C face of 6H-SiC

P. Godignon, N. Mestres, G. Rius, 2008, 0810.4888.

Luminescence excitation spectroscopy of NN pairs in GaP:N under uniaxial stress

B. Gil, J. Camassel, L. Martin, 1985 .

Raman Imaging - ReadingSample

A. Tiberj, J. Camassel, A. Zoubir, 2017 .

Micro-Raman and micro-transmission imaging of epitaxial graphene grown on the Si and C faces of 6H-SiC

N. Camara, P. Godignon, A. Tiberj, 2011, Nanoscale research letters.

Near-band-edge optical properties of Ga Se x Te 1 − x mixed crystals

J. Camassel, A. Gouskov, H. Mathieu, 1979 .

High temperature behaviour of AlGaN/AlN/GaN Hall-FET sensors

Y. Cordier, L. Konczewicz, J. Camassel, 2008 .

Control of Al-implantation doping in 4H-SiC

J. Bluet, J. Michaud, J. Pernot, 2001 .

Activation of aluminum implanted at high doses in 4H–SiC

J. Bluet, J. Michaud, J. Pernot, 2000 .

Nuclear Instruments and Methods in Physics Research

D. J. Brink, J. Malherbe, A. Andronic, 2011 .

Excitonic absorption edge of indium selenide

J. Camassel, A. Chevy, H. Mathieu, 1978 .

From Transport Measurements to Infrared Reflectance Spectra of n-Type Doped 4H-SiC Layer Stacks

J. Pernot, J. Camassel, J. Robert, 2003 .

Investigation of porous silicon as a new compliant substrate for 3C-SiC deposition

B. Fraisse, P. Colter, S. Juillaguet, 1999 .

SOL thickness dependence of residual strain in SOI material

M. Eickhoff, J. Camassel, L. Falkovsky, 1999 .

Resolved Quadrupolar Transition in TiO 2

J. Pascual, J. Camassel, H. Mathieu, 1977 .

Experimental characterization of interface roughness in strained InGaAs/InP MQWs after a growth interruption sequence

A. Kohl, F. Baumann, B. Fraisse, 1993, 1993 (5th) International Conference on Indium Phosphide and Related Materials.

Temperature dependence of the band gap and comparison with the threshold frequency of pure GaAs lasers

J. Camassel, H. Mathieu, D. Auvergne, 1975 .

Lattice dynamics of CdGeAs2

L. Artús, J. Pascual, J. Camassel, 1990 .

Almost Free Standing Graphene on SiC(000-1) and SiC(11-20)

N. Camara, P. Godignon, J. Camassel, 2012 .

Growth of monolayer graphene on 8° off-axis 4H–SiC (000–1) substrates with application to quantum transport devices

P. Godignon, N. Mestres, N. Camara, 2010, 1007.2977.

Uniformity of Epitaxial Graphene on On-Axis and Off-Axis SiC Probed by Raman Spectroscopy and Nanoscale Current Mapping

M. Syväjärvi, R. Yakimova, S. Sonde, 2010 .

Investigation of optically active E1 transversal optic phonon modes in AlxGa1−xN layers deposited on 6H–SiC substrates using infrared reflectance

R. Davis, W. Knap, P. Wiśniewski, 1998 .

Optical Properties of GAInAs/InP Multi-quantum Well Grown by Low Pressure MOVPE

H. Kurz, D. Grutzmacher, P. Balk, 1989, ESSDERC '89: 19th European Solid State Device Research Conference.

Raman Investigation of Heavily Al Doped 4H-SiC Layers Grown by CVD

L. Konczewicz, S. Juillaguet, J. Camassel, 2014 .

Raman Investigation of Aluminum-Doped 4H-SiC

L. Konczewicz, S. Juillaguet, J. Camassel, 2013 .

Incorporation of group III, IV and V elements in 3C–SiC(1 1 1) layers grown by the vapour–liquid–solid mechanism

G. Ferro, Jianwu Sun, E. Polychroniadis, 2010 .

Multidimensional characterization, Landau levels and Density of States in epitaxial graphene grown on SiC substrates

N. Camara, A. Tiberj, J. Camassel, 2011, Nanoscale research letters.

Differences between Graphene Grown on Si-Face and C-Face

P. Godignon, N. Mestres, N. Camara, 2010 .

Resonant Raman scattering in GaSe and GaSxSe1−x

Yaochun Shen, J. Camassel, T. Chiang, 1977 .

Multiphonon resonant Raman scattering in GaSe

N. Amer, Yaochun Shen, Y. Shen, 1976 .

Resonant Raman scattering in mixed GaSxSe1−x crystals

Yaochun Shen, J. Camassel, T. Chiang, 1976 .

Strain effect in silicon-on-insulator materials: Investigation with optical phonons

J. Camassel, L. Falkovsky, N. Planes, 2000, cond-mat/0009459.

Quantitative analysis of the lattice reconstruction of ion-implanted SiC after visible light laser irradiation

D. J. Brink, J. Camassel, H. Peyre, 2009 .

Fine structure in the intrinsic absorption edge of Ti O 2

J. Pascual, J. Camassel, H. Mathieu, 1978 .

Investigation of residual impurity content in GaAs layers grown by VPE under very low pressure conditions

S. Juillaguet, J. Camassel, M. Deschler, 1991 .

The cyclotron resonance effective mass of two-dimensional electrons confined at the GaN/AlGaN interface

M. Shur, J. Bluet, M. Khan, 1996 .

Disorder effect on optical phonons

J. Camassel, L. Falkovsky, 2000 .

Tuning the transport properties of graphene films grown by CVD on SiC(0001): Effect of in situ hydrogenation and annealing

M. Portail, A. Michon, W. Escoffier, 2014 .

Optical Characterization of SiC Materials: Bulk and Implanted Layers

J. Camassel, P. Vicente, L. Falkovski, 2001 .

Optical investigation of residual doping species in 6H and 4H-SiC layers grown by chemical vapor deposition

J. Bluet, G. Ferro, E. Neyret, 1999 .

Micro‐Raman investigation of cubic silicon carbide crystals grown from the travelling zone method

R. Lewandowska, J. Santailler, B. Ferrand, 2007 .

Splitting of type-I (N-B, P-Al) and type-II (N-Al, N-Ga) donor-acceptor pair spectra in 3C-SiC

I. Ivanov, Jianwu Sun, S. Juillaguet, 2011 .

Combined structural and optical studies of stacking faults in 4H‐SiC layers grown by chemical vapour deposition

T. Chassagne, E. Polychroniadis, S. Juillaguet, 2008 .

Cathodoluminescence investigation of stacking faults extension in 4H‐SiC

T. Chassagne, S. Juillaguet, J. Camassel, 2007 .

Screening the built-in electric field in 4H silicon carbide stacking faults

T. Chassagne, M. Albrecht, S. Juillaguet, 2007 .

Application of LTPL Investigation Methods to CVD-Grown SiC†

S. Juillaguet, J. Camassel, M. Zielinski, 2006 .

Optical assessment of purity improvement effects in bulk 6H and 4H-SiC wafers grown by physical vapor transport

J. Bluet, P. Grosse, M. Couchaud, 1999 .

Polarization dependence of the infrared spectra of TlSbS2

J. Jumas, J. Pascual, J. Camassel, 1987 .

Polarization dependence of the Raman spectra of TlSbS2

J. Olivier-Fourcade, J. Camassel, E. Philippot, 1986 .

Uniaxial-stress dependence of the first-order Raman spectrum of rutile-type crystals. III. Mg F 2

B. Gil, J. Pascual, J. Camassel, 1981 .

Polarized IR reflectivity of CdGeAs2

L. Artús, J. Pascual, J. Camassel, 1990 .

Polarized infrared spectra of AgGaSe2

L. Artús, J. Pascual, J. Camassel, 1989 .

Uniaxial-stress dependence of the first-order Raman spectrum of rutile. II. Model calculation

J. Pascual, J. Camassel, H. Mathieu, 1980 .

Hetero-epitaxy of ZnSe on GaAs by hydrogen transport

J. Camassel, G. Bougnot, J. Chevrier, 1972 .

Growth and characterization of III–VI layered crystals like GaSe, GaTe, InSe, GaSe1-xTex and GaxIn1-xSe

A. Gouskov, Jean Camassel, J. Camassel, 1982 .

On the Semi‐Classical Theory of Piezoreflection and Magneto‐Piezoreflection

J. Camassel, B. Pistoulet, H. Mathieu, 1970 .

Optical investigation of stacking faults in 4H-SiC epitaxial layers: Comparison of 3C and 8H polytypes

S. Juillaguet, J. Camassel, T. Robert, 2009 .

Optical properties of as‐grown and process‐induced stacking faults in 4H‐SiC

S. Juillaguet, J. Camassel, 2008 .

Control of epitaxial layers grown on 4H–SiC: from 3C microcrystalline inclusions to type II quantum well structures

Y. Monteil, S. Juillaguet, J. Camassel, 2005 .

Specific Aspects of Type II Heteropolytype Stacking Faults in SiC

S. Juillaguet, J. Camassel, 2005 .

Graphene growth on AlN templates on silicon using propane-hydrogen chemical vapor deposition

T. Chassagne, M. Portail, A. Michon, 2014 .

Optical properties of GaSe andGaSxSe1−xmixed crystals

Yaochun Shen, M. Schlüter, Marvin L. Cohen, 1976 .

Bridgman solidification of GaSb in space

P. Dusserre, Brian K. Tanner, T. Duffar, 1998 .

Thermal stability of InGaAs/InGaAsP quantum wells

R. W. Glew, F. Alsina, J. Pascual, 1993 .

Non-destructive approaches to interdiffusion phenomena across GaInAs/GaInAsP interfaces: photoluminescence vs. Raman

F. Alsina, S. Juillaguet, J. Pascual, 1993 .

Experimental investigation of the thermal stability of strained InGaAs/InGaAsP MQWs

R. Glew, J. Camassel, H. Peyre, 1993, 1993 (5th) International Conference on Indium Phosphide and Related Materials.

Optical tools for intermixing diagnostic: application to InGaAs/InGaAsP microstructures

F. Alsina, S. Juillaguet, J. Pascual, 1993 .

Investigation of 1 Dimensional Intermixing in InGaAs/InGaAsP Based Devices : (A) — Electrons

J. Pascual, R. Glew, J. Camassel, 1993 .

Photoluminescence, cathodo-luminescence and micro-Raman spectroscopy of as-grown stacking faults in 4H-SiC

T. Chassagne, S. Juillaguet, J. Camassel, 2007 .

Hexamethyldisilane/propane versus silane/propane precursors: application to the growth of high-quality 3C–SiC on Si

G. Ferro, S. Rushworth, E. Polychroniadis, 2003 .

Control of Al‐doping in 4H–SiC homo‐epitaxial layers grown with a HMDS/TMA/P mixture

S. Rushworth, Y. Monteil, J. Camassel, 2005 .

Investigation of <1,1,-2,0> Epitaxial Layers Grown on a-Cut 4H-SiC Substrates

Y. Monteil, S. Juillaguet, J. Camassel, 2004 .

Growth at High Rates and Characterization of Bulk 3C-SiC Material

G. Ferro, Y. Monteil, S. Juillaguet, 2003 .

Modeling the infrared reflectance of n-/n+ SiC layers on top of n+ SiC substrates for epitaxy control application

J. Pernot, J. Camassel, Huiyao Wang, 2003 .

Characterization of 3C-SiC/SOI Deposited with HMDS

T. Chassagne, S. Rushworth, B. Fraisse, 2000 .

State of the art of 3C-SiC/silicon on insulators

J. Camassel, 1998 .

STRAIN-FLUCTUATION EFFECT ON RAMAN SPECTRA

J. Bluet, J. Camassel, L. Falkovsky, 1997 .

Optical and electrical characterization of thick GaSb buffer layers grown on 2 in GaAs wafers

A. Giani, J. Camassel, J. Malzac, 1994 .

Trends in Dopant Incorporation for 3C-SiC Films on Silicon

A. Leycuras, T. Chassagne, M. Portail, 2007 .

Technical aspects of 〈$ \bf 11\bar 20 $〉 4H–SiC MOSFET processing

D. Tournier, Y. Monteil, S. Juillaguet, 2005 .

Comparative Studies of ‹0001› 4H-SiC Layers Grown with either Silane or HexaMethylDiSilane / Propane Precursor Systems

S. Rushworth, Y. Monteil, S. Juillaguet, 2004 .

Characterization of Bulk <111> 3C-SiC Single Crystals Grown on 4H-SiC by the CF-PVT Method

D. Chaussende, L. Latu-Romain, M. Pons, 2006 .

Comparative Evaluation of Free-Standing 3C-SiC Crystals

G. Ferro, E. Polychroniadis, Y. Monteil, 2005 .

Investigation of Thick 3C-SiC Films Re-Grown on Thin 35 nm "Flash Lamp Annealed" 3C-SiC Layers

G. Ferro, E. Polychroniadis, Y. Monteil, 2004 .

Prospects for 3C-SiC bulk crystal growth

D. Chaussende, G. Ferro, M. Pons, 2008 .

Strain and wafer curvature of 3C‐SiC films on silicon: influence of the growth conditions

A. Leycuras, T. Chassagne, M. Portail, 2006 .

Potential of HMDS/C3H8 Precursor System for the Growth of State of the Art Heteroepitaxial 3C-SiC Layers on Si(100)

G. Ferro, S. Rushworth, E. Polychroniadis, 2004 .

Growth and characterisation of SiC films deposited on a-SiO2/Si (100) substrates

J. Millán, J. Pascual, J. Camassel, 1996 .

Neutron irradiation effects in SiC

D. J. Brink, J. Malherbe, J. Camassel, 2009 .

Room Temperature Implantation and Activation Kinetics of Nitrogen and Phosphorus in 4H-SiC Crystals

P. Godignon, N. Mestres, E. Morvan, 2004 .

Control of 3C–SiC/Si wafer bending by the “checker‐board” carbonization method

G. Ferro, A. Leycuras, T. Chassagne, 2005 .

Single-Domain 3C-SiC Epitaxially Grown on 6H-SiC by the VLS Mechanism

D. Chaussende, G. Ferro, E. Polychroniadis, 2006 .

Raman Investigation of Stress Relaxation at the 3C-SiC/Si Interface

J. Bluet, J. Camassel, N. Planes, 1997 .

Flash Lamp Supported Deposition of 3C-SiC (FLASiC) – a Promising Technique to Produce High Quality Cubic SiC Layers

P. Godignon, N. Mestres, G. Ferro, 2004 .

From N isoelectronic impurities to N-induced bands in the GaNxAs1−x alloy

W. Stolz, P. Klar, J. Camassel, 2000 .

Rapid Growth of Oxide Films on SiC by Photo-Assisted Mechanism

P. Godignon, N. Camara, J. Montserrat, 2011 .

Dependence of the exciton polariton reflectivity spectrum of InP upon hydrostatic pressure

B. Gil, J. Camassel, A. Kadri, 1986 .

Deformation potentials of the direct and indirect absorption edges of GaP

E. L. Ameziane, Henry Mathieu, Jean Camassel, 1979 .

Uniaxial-stress dependence of the first-order Raman spectrum of rutile. I. Experiments

J. Pascual, J. Camassel, H. Mathieu, 1980 .

Stress dependence of the sulfur-bound excitons in GaP

J. Camassel, H. Mathieu, P. Merle, 1979 .

Hetero-epitaxy of ZnSiAs2/GaAs grown by atmospheric pressure MOVPE

J. Camassel, P. Coulon, A. Foucaran, 1991 .

Optical mapping of aluminum doped p‐type SiC wafers

M. Mermoux, M. Pons, L. Auvray, 2005 .

Raman scattering as a probing method of subsurface damage in SiC

J. Camassel, D. David, P. Vicente, 2001 .

TEMPERATURE DEPENDENCE OF THE FUNDAMENTAL EDGE OF GERMANIUM AND ZINC BLENDE-TYPE SEMICONDUCTORS

J. Camassel, D. Auvergne, 1975 .

Infra-red characterization of carbonization of Si surfaces by gas source molecular beam epitaxy

M. Androulidaki, K. Zekentes, J. Pascual, 1997 .

Gas source molecular beam epitaxy of -SiC on Si substrates

J. Bluet, M. Androulidaki, K. Zekentes, 1996 .

Cyclotron resonance and quantum Hall effect studies of the two-dimensional electron gas confined at the GaN/AlGaN interface

M. Shur, M. Goiran, J. Leotin, 1997 .

Temperature dependance of the fundamental absorption edge in CdTe

R. Triboulet, J. Camassel, Y. Marfaing, 1973 .

Excitonic effect in the piezoreflectance of GaSb

J. Camassel, B. Pistoulet, H. Mathieu, 1970 .

Finite interface effects for thin GaInAs/InP quantum wells grown by LP-MOVPE with a growth interruption sequence

H. Kurz, D. Grützmacher, S. Juillaguet, 1991 .

Piezoreflectance measurements on GaxIn1−x Sb alloys

J. Camassel, A. Joullie, H. Mathieu, 1974 .

Current status of self-organized epitaxial graphene ribbons on the C face of 6H–SiC substrates

N. Mestres, N. Camara, P. Godignon, 2010 .

Growth of Few Graphene Layers on 6H, 4H and 3C-SiC Substrates

P. Godignon, N. Mestres, G. Rius, 2009 .

Rapid and Efficient Oxidation Process of SiC by In Situ Multiple RTP Steps

P. Godignon, A. Constant, M. Berthou, 2010 .

Excitonic absorption edge of GaTe

J. Camassel, H. Mathieu, P. Merle, 1980 .

Electrical resistivity and metal-nonmetal transition in n-type doped 4H-SiC

C. Persson, J. Pernot, J. Camassel, 2006 .

Modulation spectroscopy of semiconducting group IV-A and IV-B dichalcogenides

F. Lévy, J. Camassel, S. Kohn, 1977 .

Selective epitaxial growth of graphene on SiC

P. Godignon, N. Mestres, G. Rius, 2008, 0806.4056.

Interfacial Properties of Oxides Grown on 3C-SiC by Rapid Thermal Processing

M. Placidi, N. Camara, P. Godignon, 2011 .

J−Jcoupling and local-field effects on N-N pair spectra in GaP

B. Gil, J. Camassel, H. Mathieu, 1982 .

Piezospectroscopic investigation of the 1s ground states and 2s excited states of the (D 0 X) complex in GaP(S)

J. Camassel, H. Mathieu, P. Merle, 1980 .

Stress effects on excitons bound to neutral acceptors in InP

J. Camassel, H. Mathieu, F. Chekroun, 1984 .

Shockley-Frank stacking faults in 6H-SiC

M. Syväjärvi, R. Yakimova, Jianwu Sun, 2012 .

Low Temperature Photoluminescence Signature of Stacking Faults in 6H-SiC Epilayers Grown on Low Angle Off-Axis Substrates

M. Syväjärvi, R. Yakimova, V. Jokubavičius, 2012 .

Combined effects of Ga, N, and Al codoping in solution grown 3C–SiC

G. Ferro, Jianwu Sun, S. Juillaguet, 2010 .

LTPL Investigation of N-Ga and N-Al Donor-Acceptor Pair Spectra in 3C-SiC Layers Grown by VLS on 6H-SiC Substrates

G. Ferro, Jianwu Sun, S. Juillaguet, 2010 .

Electrical transport properties of aluminum-implanted 4H–SiC

Sylvie Contreras, Julien Pernot, J. Pernot, 2005 .

Wavelength-modulated spectrum and electronic properties of HfS2

Yaochun Shen, J. Camassel, C. Fong, 1976 .

Stress-induced X1c-X3c conduction band mixing in GaP

J. Camassel, H. Mathieu, P. Merle, 1978 .

Symmetry-breaking effects on N-bound excitons in GaP

J. Camassel, H. Mathieu, 1983 .

Atomic-Step Observations on 6H- and 15R-SiC Polished Surfaces

D. Chaussende, J. Camassel, E. Pernot, 2002 .

Interplay between interferences and electron-electron interactions in epitaxial graphene

N. Camara, J. Camassel, C. Conséjo, 2011, 1104.1342.

Formation of a surface SiC layer by carbon-ion implantation into silicon

D. J. Brink, J. Malherbe, J. Camassel, 2004 .

Quantum Hall effect in bottom-gated epitaxial graphene grown on the C-face of SiC

P. Godignon, N. Camara, J. Camassel, 2012 .

Effects of Photons on 4H-SiC Rapid Thermal Oxidation Using Nitrous Oxide Gas

M. Placidi, A. Constant, N. Camara, 2010 .

Benefit of H2 surface pretreatment for 4H-SiC oxynitridation using N2O and rapid thermal processing steps

Phillippe Godignon, Jean Camassel, P. Godignon, 2009 .

Multiscale investigation of graphene layers on 6H-SiC(000-1)

A. Mahmood, P. Mallet, J. Veuillen, 2011, Nanoscale research letters.

Electrical characterization of SiC for high-temperature thermal-sensor applications

C. Jaussaud, J. Pascual, J. Camassel, 1995 .

Growth of bulk and superlattice GaAsSb layers on InP

A. Giani, J. Camassel, F. Pascal-Delannoy, 2001 .

Band-gap shrinkage of semiconductors

J. Camassel, H. Mathieu, D. Auvergne, 1975 .

Lateral uniformity of the transport properties of graphene/4H-SiC (0001) interface by nanoscale current measurements

R. Yakimova, S. Sonde, F. Giannazzo, 2009 .

STRAIN RELAXATION AT THE 3C-SIC/SI INTERFACE : RAMAN SCATTERING EXPERIMENTS

J. Bluet, J. Camassel, L. Falkovsky, 1998 .

Free electron density and mobility in high-quality 4H-SiC

L. Di Cioccio, Sylvie Contreras, Jean-Louis Robert, 2000 .

Low Doped 3C-SiC Layers Deposited by the Vapour-Liquid-Solid Mechanism on 6H-SiC Substrates

G. Ferro, S. Juillaguet, J. Camassel, 2010 .

Experimental Investigation of Cubic to Hexagonal Ratio for GaN Layers Deposited on 3C-SiC/Si

J. Pankove, J. Camassel, J. Allègre, 1999 .

Effect of initial substrate conditions on growth of cubic silicon carbide

G. Ferro, M. Syväjärvi, R. Yakimova, 2011 .

Investigation of Low Doped n-Type and p-Type 3C-SiC Layers Grown on 6H-SiC Substrates by Sublimation Epitaxy

M. Syväjärvi, R. Yakimova, Jianwu Sun, 2010 .

Characterization of a 3C-SiC Single Domain Grown on 6H-SiC(0001) by a Vapor-Liquid-Solid Mechanism

D. Chaussende, G. Ferro, E. Polychroniadis, 2006 .

Growth of Cubic Silicon Carbide Crystals from Solution

B. Ferrand, E. Polychroniadis, J. Santailler, 2006 .

Structural, optical and electrical properties of state of the art cubic SiC films

J. Pascual, J. Camassel, J. Robert, 1995 .

SiC materials: a semiconductor family for the next century

J. Camassel, J. Robert, S. Contreras, 2000 .

Influence of the C/Si Ratio on the Dopant Concentration and Defects in CVD Grown 3C‐SiC Homoepitaxial Layers

G. Ferro, E. Polychroniadis, S. Juillaguet, 2010 .

Influence of Post-Growth Annealing on the Defects Nature and Distribution in VLS Grown (111) 3C-SiC Layers

G. Ferro, E. Polychroniadis, S. Juillaguet, 2011 .

TEM and LTPL Investigations of 3C-SiC Layers Grown by LPE on (100) and (111) 3C-SiC Seeds

D. Chaussende, G. Ferro, E. Polychroniadis, 2010 .

Seeding Layer Influence on the Low Temperature Photoluminescence Intensity of 3C-SiC Grown on 6H-SiC by Sublimation Epitaxy

G. Ferro, M. Syväjärvi, R. Vasiliauskas, 2012 .

Optical Characterization of VLS+CVD Grown 3C-SiC Films by Non-Linear and Photoluminescence Techniques

G. Ferro, K. Jarašiūnas, S. Juillaguet, 2010 .

Defect status near the SiC/substrate interface: investigation of the first stage of the growth by physical vapour transport

E. Polychroniadis, J. Camassel, J. Wollweber, 2005 .

Defect-induced polytype transformations in LPE grown SiC epilayers on (1 1 1) 3C-SiC seeds grown by VLS on 6H-SiC

D. Chaussende, G. Ferro, E. Polychroniadis, 2009 .

Dilute Aluminium Concentration in 4H-SiC: from SIMS to LTPL Measurements

Y. Monteil, S. Juillaguet, J. Camassel, 2003 .

Room temperature luminescence properties of fluorescent SiC as white light emitting diode medium

M. Syväjärvi, R. Yakimova, S. Kamiyama, 2012 .

Is the Al Solubility Limit in SiC Temperature Dependent or not?

G. Ferro, E. Polychroniadis, Y. Monteil, 2005 .

Full wafer size investigation of N+ and P+ co‐implanted layers in 4H–SiC

N. Mestres, J. Lyonnet, J. Pascual, 2005 .

Homogeneity of Nitrogen and Phosphorus Co-Implants in 4H-SiC: Full Wafer Scale Investigation

P. Godignon, N. Mestres, J. Lyonnet, 2005 .

Evaluation of p-Type Doping for (1,1,-2,0) Epitaxial Layers Grown on α-Cut (1,1,-2,0) 4H-SiC Substrates

Y. Monteil, S. Juillaguet, J. Camassel, 2005 .

Quantitative Evaluation of Implantation Damage and Damage Recovery after Room Temperature Ion-Implantation of N+ and P+ Ions in 6H-SiC

P. Godignon, N. Mestres, J. Pascual, 2003 .

Intensity Ratio of the Doublet Signature of Excitons Bound to 3C-SiC Stacking Faults in a 4H-SiC Matrix

S. Juillaguet, J. Camassel, 2005 .

4H-SiC Material for Hall Effect and High-Temperature Sensors Working in Harsh Environments

L. Di Cioccio, S. Juillaguet, J. Pernot, 2002 .

Growth and Characterisation of Heavily Al-Doped 4H-SiC Layers Grown by VLS in an Al-Si Melt

G. Ferro, E. Polychroniadis, Y. Monteil, 2004 .

Optical properties of as‐grown and process‐induced stacking faults in 4H‐SiC

S. Juillaguet, J. Camassel, 2008 .

Optical Investigation of Stacking Faults and Micro-Crystalline Inclusions In-Low-Doped 4H-SiC Layers

Y. Monteil, S. Juillaguet, J. Pernot, 2004 .

Effect of Inter-Well Coupling between 3C and 6H in-Grown Stacking Faults in 4H-SiC Epitaxial Layers

A. Henry, E. Polychroniadis, S. Juillaguet, 2011 .

Electric-Field Screening Effects in the Micro-Photoluminescence Spectra of As-Grown Stacking Faults in 4H-SiC

T. Chassagne, S. Juillaguet, J. Camassel, 2007 .

Thermally induced change in the profile of GaAs/AlGaAs quantum wells

W. Gillin, R. Grey, K. Homewood, 1994 .

Anisotropic growth of long isolated graphene ribbons on the C face of graphite-capped 6H-SiC

Philippe Godignon, Francesc Pérez-Murano, Jean Camassel, 2009 .

Low temperature photoluminescence investigations of 3C-SiC quasi-substrates grown on hexagonal 6H-SiC seeds

G. Ferro, M. Syväjärvi, R. Yakimova, 2009 .

Optical Investigation of Defect Filtering Effects in Bulk 3C-SiC Crystals Grown by the CF-PVT Method Using a Necking Technique

T. Ouisse, D. Chaussende, Jianwu Sun, 2011 .

Nitrogen Doping of 3C-SiC Single Crystals Grown by CF-PVT

D. Chaussende, S. Juillaguet, A. Tiberj, 2009 .

Effect of Growth Conditions on Cubic Silicon Carbide Crystals Grown from Silicon Solution

B. Ferrand, G. Rolland, R. Lewandowska, 2007 .

Improvement of cubic silicon carbide crystals grown from solution

R. Lewandowska, J. Santailler, B. Ferrand, 2006 .

Optical Investigation of 3C-SiC Hetero-Epitaxial Layers Grown by Sublimation Epitaxy under Gas Atmosphere

M. Syväjärvi, V. Jokubavičius, S. Juillaguet, 2014 .

Structural and Optical Investigation of VLS Grown (111) 3C-SiC Layers on 6H-SiC Substrates in Sn-Based Melts

G. Ferro, E. Polychroniadis, S. Juillaguet, 2011 .

Investigation of 4H-SiC as a New Material for Hall or Temperature Sensors Working up to 500 °C

E. Neyret, J. Pernot, T. Billon, 2001 .

Electrical Properties of p-Type In-Situ Doped vs. Al-Implanted 4H-SiC

J. Pernot, J. Camassel, J. Robert, 2005 .

SIMS Investigation of Ge Incorporation in 3C-SiC Layers Grown from Ge-Si Melts

G. Ferro, Y. Monteil, J. Camassel, 2007 .

Acoustic investigation of porous silicon layers

T. Taliercio, J. Camassel, A. Foucaran, 1995 .

6H-Type Zigzag Faults in Low-Doped 4H-SiC Epitaxial Layers

A. Henry, E. Polychroniadis, S. Juillaguet, 2010 .

Evaluation of strain induced by implantation in SOI materials

B. Fraisse, A. Tiberj, J. Camassel, 2003 .

Metal‐Insulator Transition in GaN Crystals

W. Knap, A. Polian, P. Perlin, 1996 .

Coexistence of Shallow and Localized Donor Centers in Bulk GaN Crystals Studied by High-Pressure Raman Spectroscopy

W. Knap, A. Polian, P. Perlin, 1996 .

Temperature dependence of the band structure of germanium- and zinc-blende-type semiconductors

M. Cardona, J. Camassel, H. Mathieu, 1974 .

Reactive ion etching of 6H-SiC in an ECR plasma of CF4-O2 mixtures using both Ni and Al masks

J. Bluet, R. Bonnot, J. Camassel, 1997 .

Probing the electrical anisotropy of multilayer graphene on the Si face of 6 H -SiC

P. Godignon, N. Camara, Y. Kopelevich, 2010 .