T. Guo

发表

Transparent and Flexible Capacitors with an Ultrathin Structure by Using Graphene as Bottom Electrodes

Guozhen Zhang, Chang Liu, T. Guo, 2017, Nanomaterials.

Electroluminescence from the Ge quantum dot MOS tunneling diodes

M. Liao, T. Guo, C. Liu, 2006, IEEE Electron Device Letters.

Fully Transparent and Flexible Capacitors with ZrO2 as the Dielectric Layer

Guozhen Zhang, Chang Liu, T. Guo, 2018, Advanced Electronic Materials.

High-quality-factor flexible and transparent capacitors with Cr–Au nanomeshes as bottom electrodes

Guozhen Zhang, Chang Liu, T. Guo, 2019, Nanotechnology.

Highly flexible, stable and transparent capacitors with enhanced performances by composite electrodes of AZO and metallic nanomeshes

Guozhen Zhang, Chang Liu, T. Guo, 2020 .

Surface functionalization toward top-gated monolayer MoS2 field-effect transistors with ZrO2/Al2O3 as composite dielectrics

Chang Liu, T. Guo, Xi Su, 2021 .

van der Waals integration of AZO/MoS2 ohmic junctions toward high-performance transparent 2D electronics

Chang Liu, T. Guo, Jiaxian Wan, 2020 .

δ-Doped MOS Ge/Si quantum dot/well infrared photodetector

Cheewee Liu, T. Guo, P. Kuo, 2006 .

Transparent and Flexible Thin‐Film Transistors with High Performance Prepared at Ultralow Temperatures by Atomic Layer Deposition

Guozhen Zhang, Chang Liu, T. Guo, 2018, Advanced Electronic Materials.