S. Ito

Fabrication of graphene on atomically flat diamond (111) surfaces using nickel as a catalyst

S. Yamasaki, D. Takeuchi, Shohei Kanada, 2017 .

Pattern dependence in selective epitaxial Si1−xGex growth using reduced‐pressure chemical vapor deposition

S. Ito, S. Nishikawa, T. Nakamura, 1995 .

TEM characterization of epitaxial graphene formed on Si(111), Si(110), Si(100)

R. Takahashi, H. Handa, S. Abe, 2010 .

Local lattice strain distribution around a transistor channel in metal–oxide–semiconductor devices

Kiyotaka Imai, Haruhiko Ono, Nobuyuki Ikarashi, 2001 .

Room-temperature epitaxial growth of AlN films

H. Fujioka, M. Oshima, S. Ito, 2002 .

Epitaxial growth of metals on Si and Ge investigated by RHEED-TRAXS and UHV-SEM

T. Yamanaka, S. Ito, S. Ino, 1993 .

Highly reliable SiO/sub 2//Si/sub 3/N/sub 4/ stacked dielectric on rapid-thermal-nitrided rugged polysilicon for high-density DRAM's

G. Lo, D. Kwong, P. Fazan, 1992, IEEE Electron Device Letters.