H. Kim

发表

Multilayer Stacking and Metal deposition Effects on Large Area Graphene on GaAs

M. Missous, R. Young, M. Migliorato, 2016 .

Proton irradiation energy dependence of dc and rf characteristics on InAlN/GaN high electron mobility transistors

Yu Cao, J. Kim, F. Ren, 2012 .

Effects of proton irradiation on dc characteristics of InAlN/GaN high electron mobility transistors

Yu Cao, J. Kim, F. Ren, 2011 .

Control of the free carrier concentrations in a Si-doped freestanding GaN grown by hydride vapor phase epitaxy

J. Kim, H. Park, H. Kim, 2012 .

Effect of 5 MeV proton radiation on DC performance and reliability of circular-shaped AlGaN/GaN high electron mobility transistors

A. Allerman, J. Kim, F. Ren, 2014 .

Neutron irradiation on AlGaN/GaN high electron mobility transistors on SiC substrates

B. J. Kim, Byung Jae Kim, J. Kim, 2011 .

Proton-irradiated InAlN/GaN high electron mobility transistors at 5, 10, and 15 MeV energies

J. Kim, F. Ren, S. Pearton, 2012 .

Micro-Raman measurement of high-energy deuterium irradiated GaN

H. Kim, W. Jung, H. S. Kim, 2013 .

GaN-based ultraviolet light-emitting diodes with AuCl₃-doped graphene electrodes.

F. Ren, K. Baik, S. Pearton, 2013, Optics express.

Electrical Characterization of 5 MeV Proton-Irradiated Few Layer Graphene

F. Ren, S. Pearton, H. Kim, 2010 .

AlGaN/GaN High Electron Mobility Transistors Irradiated with 17 MeV Protons

F. Ren, S. Pearton, T. Anderson, 2008 .

Self-Annealing in Neutron-Irradiated AlGaN ∕ GaN High Electron Mobility Transistors

F. Ren, S. Pearton, H. Kim, 2009 .

Chemical etching behavior of non-polar GaN sidewalls

K. Baik, Soohwan Jang, H. Kim, 2016 .

Enhanced voltage-current characteristics of GaN nanowires treated by a selective reactive ion etching

C. Yim, Kyungkon Kim, J. Huh, 2006 .

Deep-ultraviolet photodetector based on exfoliated n-type β-Ga2O3 nanobelt/p-Si substrate heterojunction

Jihyun Kim, H. Kim, J. Kim, 2018, Korean Journal of Chemical Engineering.

Transfer-Free Growth of Multilayer Graphene Using Self-Assembled Monolayers.

Jihyun Kim, Soohwan Jang, Gwangseok Yang, 2016, ACS applied materials & interfaces.

Study on the formation of graphene by ion implantation on Cu, Ni and CuNi alloy

Jihyun Kim, Janghyuk Kim, Jihyun Kim, 2018, Applied Surface Science.

Penetration depth profiling of proton-irradiated 4H-SiC at 6 MeV and 8 MeV by micro-Raman spectroscopy

J. Freitas, H. Kim, J. Kim, 2013 .

Predicted bandgap opening in highly-oriented wrinkles formed in chemical vapour deposition grown graphene

M. Missous, R. Young, R. Gupta, 2018, Materials Research Express.

Probing proton irradiation effects in GaN by micro-Raman spectroscopy

J. Freitas, Jihyun Kim, H. Kim, 2011 .

Multilevel Absorbers via the Integration of Undoped and Tungsten-Doped Multilayered Vanadium Dioxide Thin Films.

J. Rho, T. Paik, Ji-Yeon Chae, 2022, ACS applied materials & interfaces.

Selective chemical etch of gallium nitride by phosphoric acid

J. Freitas, C. Eddy, H. Kim, 2012 .

Dynamic modulation of the Fermi energy in suspended graphene backgated devices

M. Missous, R. Young, R. Gupta, 2019, Science and technology of advanced materials.

Self-Aligned Contact Doping of WSe2 Metal–Insulator–Semiconductor Field-Effect Transistors Using Hydrogen Silsesquioxane

Dongryul Lee, H. Kim, Geonyeop Lee, 2023, ACS Applied Electronic Materials.

Proton irradiation effects on Sb-based heterojunction bipolar transistors

Shu Han Chen, J. Chyi, Yu-Lin Wang, 2009 .

Penetration Effects of High-Energy Protons in GaN: A Micro-Raman Spectroscopy Study

J. Freitas, H. Kim, J. Kim, 2011 .

Etch pit investigation of free electron concentration controlled 4H-SiC

Jung Gon Kim, W. Bahng, Jihyun Kim, 2013 .

Effects of proton irradiation energies on degradation of AlGaN/GaN high electron mobility transistors

Stephen J. Pearton, Ji Hyun Kim, F. Ren, 2012 .

Inductively coupled plasma etching of nano-patterned sapphire for flip-chip GaN light emitting diode applications

Byung Jae Kim, C. Eddy, J. Bang, 2008 .

Effect of neutron irradiation on electrical and optical properties of InGaN/GaN light-emitting diodes

F. Ren, Soohwan Jang, H. Kim, 2010 .

Optical and electrical characterization of AlGaN/GaN high electron mobility transistors irradiated with 5 MeV protons

Jaime A. Freitas, Jennifer K. Hite, Michael A. Mastro, 2011 .

Graphitization of self-assembled monolayers using patterned nickel-copper layers

Gwangseok Yang, H. Kim, J. Kim, 2017 .

Contacting Mechanically Exfoliated β-Ga2O3 Nanobelts for (Opto)electronic Device Applications

H. Kim, Jinho Bae, J. Kim, 2017 .

Fabrication of GaN nanorods by inductively coupled plasma etching via SiO2 nanosphere lithography

J. Bang, H. Kim, Hyunjung Jung, 2009 .

Electrical characterization of 60Co gamma radiation-exposed InAlN/GaN high electron mobility transistors

F. Ren, S. Pearton, H. Kim, 2013 .

Dependence on proton energy of degradation of AlGaN/GaN high electron mobility transistors

Ivan I. Kravchenko, Stephen J. Pearton, Dennis E. Walker, 2013 .

Experimental study of plasmonically enhanced GaN nanowire light emitters

J. Freitas, C. Eddy, M. Twigg, 2008 .

Study on the effects of proton irradiation on the dc characteristics of AlGaN/GaN high electron mobility transistors with source field plate

F. Ren, S. Pearton, V. Craciun, 2014 .

Impact of proton irradiation on dc performance of AlGaN/GaN high electron mobility transistors

Ivan I. Kravchenko, Stephen J. Pearton, Ji Hyun Kim, 2013 .

Proton irradiation effects on AlN/GaN high electron mobility transistors

Amir Dabiran, Lin Zhou, David J. Smith, 2010 .

Wet etching of non-polar gallium nitride light-emitting diode structure for enhanced light extraction

C. Eddy, Jihyun Kim, H. Kim, 2011 .

Photo-enhanced chemical etched GaN LED on silicon substrate

C. Eddy, H. Kim, J. Hite, 2011 .