Yuhao Zhang

发表

High-Performance WSe2 Complementary Metal Oxide Semiconductor Technology and Integrated Circuits.

T. Palacios, Lili Yu, Yuxuan Lin, 2015, Nano letters.

Reduction of on-resistance and current crowding in quasi-vertical GaN power diodes

T. Palacios, A. Dadgar, Yuhao Zhang, 2017 .

Beyond Thermal Management: Incorporating p-Diamond Back-Barriers and Cap Layers Into AlGaN/GaN HEMTs

T. Palacios, K. Teo, Yuhao Zhang, 2016, IEEE Transactions on Electron Devices.

High-Performance GaN Vertical Fin Power Transistors on Bulk GaN Substrates

T. Palacios, Xiang Gao, Yuhao Zhang, 2017, IEEE Electron Device Letters.

Electrothermal Simulation and Thermal Performance Study of GaN Vertical and Lateral Power Transistors

F. Gao, T. Palacios, T. Fujishima, 2013, IEEE Transactions on Electron Devices.

GaN-on-Si Vertical Schottky and p-n Diodes

T. Palacios, T. Fujishima, Xu Zhang, 2014, IEEE Electron Device Letters.

Gallium nitride vertical power devices on foreign substrates: a review and outlook

T. Palacios, A. Dadgar, Yuhao Zhang, 2018, Journal of Physics D: Applied Physics.

Vertical GaN Junction Barrier Schottky Rectifiers by Selective Ion Implantation

Daniel Piedra, Xiang Gao, Tomás Palacios, 2017, IEEE Electron Device Letters.

720-V/0.35-m $\Omega \cdot$ cm2 Fully Vertical GaN-on-Si Power Diodes by Selective Removal of Si Substrates and Buffer Layers

Nadim Chowdhury, Tomás Palacios, Mengyang Yuan, 2018, IEEE Electron Device Letters.

Materials and processing issues in vertical GaN power electronics

Daniel Piedra, Nadim Chowdhury, Tomas Palacios, 2017 .

Native and process induced defects in GaN films grown on Si substrates probed using a monoenergetic positron beam

A. Uedono, Yu Cao, T. Palacios, 2014, 2014 International Workshop on Junction Technology (IWJT).

Vacancy clusters introduced by CF4-based plasma treatment in GaN probed with a monoenergetic positron beam

A. Uedono, T. Palacios, T. Fujishima, 2014 .

Origin and Control of OFF-State Leakage Current in GaNon-Si Vertical Diodes Citation

Yuhao Zhang, Min-Chul Sun, 2015 .

AlN metal–semiconductor field-effect transistors using Si-ion implantation

A. Uedono, T. Palacios, J. Lemettinen, 2017 .

Simulation and Fabrication of GaN-Based Vertical and Lateral Normally-off Power Transistors by

B. Lu, T. Palacios, L. Kolodziejski, 2013 .

p-Channel GaN Transistor Based on p-GaN/AlGaN/GaN on Si

H. Then, T. Palacios, J. Lemettinen, 2019, IEEE Electron Device Letters.

Advanced power electronic devices based on Gallium Nitride (GaN)

F. Gao, L. Xia, B. Lu, 2015, 2015 IEEE International Electron Devices Meeting (IEDM).

MoS2 Phase-junction-based Schottky Diodes for RF Electronics

M. Dresselhaus, J. Kong, J. Grajal, 2018, Intelligent Memory Systems.

Structural, optical, and magnetic properties of Cu-implanted GaN films

Kang L. Wang, Z. J. Yang, C. D. Wang, 2009 .

The 2018 GaN power electronics roadmap

Alex Q. Huang, Yuhao Zhang, Xu Li, 2018, Journal of Physics D: Applied Physics.

Two-dimensional MoS2-enabled flexible rectenna for Wi-Fi-band wireless energy harvesting

Ahmad Zubair, Madan Dubey, Xiang Ji, 2019, Nature.

GaN HEMTs with multi-functional p-diamond back-barriers

T. Palacios, K. Teo, Yuhao Zhang, 2016, 2016 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD).

Threshold voltage control by gate oxide thickness in fluorinated GaN metal-oxide-semiconductor high-electron-mobility transistors

Tomas Palacios, Tatsuya Fujishima, T. Palacios, 2013 .

Origin and Control of OFF-State Leakage Current in GaN-on-Si Vertical Diodes

Daniel Piedra, Tomas Palacios, Puneet Srivastava, 2015, IEEE Transactions on Electron Devices.

GaN FinFETs and trigate devices for power and RF applications: review and perspective

T. Palacios, Ahmad Zubair, Zhihong Liu, 2021, Semiconductor Science and Technology.

Large-Area 1.2-kV GaN Vertical Power FinFETs With a Record Switching Figure of Merit

Daniel Piedra, Xiang Gao, Ahmad Zubair, 2018, IEEE Electron Device Letters.

Trench formation and corner rounding in vertical GaN power devices

Daniel Piedra, Xiang Gao, Tomas Palacios, 2017 .

Asymmetric hot-carrier thermalization and broadband photoresponse in graphene-2D semiconductor lateral heterojunctions

A. Liao, M. Dresselhaus, J. Kong, 2019, Science Advances.

High-Performance 500 V Quasi- and Fully-Vertical GaN-on-Si pn Diodes

Daniel Piedra, Tomás Palacios, Armin Dadgar, 2017, IEEE Electron Device Letters.

High voltage GaN HEMT compact model: Experimental verification, field plate optimization and charge trapping

Daniel Piedra, Ujwal Radhakrishna, Dimitri Antoniadis, 2013, 2013 IEEE International Electron Devices Meeting.

Two-dimensional MoS2-enabled flexible rectenna for wireless energy harvesting in the Wi-Fi band (Conference Presentation)

M. Dresselhaus, J. Kong, J. Grajal, 2019, Nanoengineering: Fabrication, Properties, Optics, Thin Films, and Devices XVI.

Recent progress of Ga2O3 power technology: large-area devices, packaging and applications

K. Sasaki, Jiandong Ye, Yuhao Zhang, 2023, Japanese Journal of Applied Physics.

Design, Modeling, and Fabrication of Chemical Vapor Deposition Grown MoS2 Circuits with E-Mode FETs for Large-Area Electronics.

Jing Kong, Anantha Chandrakasan, Ahmad Zubair, 2016, Nano letters.

Formation of low resistance ohmic contacts in GaN-based high electron mobility transistors with BCl3 surface plasma treatment

Daniel Piedra, Hyung-Seok Lee, Tomas Palacios, 2013 .

High-Performance WSe2 Complementary Metal Oxide Semiconductor Technology and Integrated Circuits.

T. Palacios, Lili Yu, Ahmad Zubair, 2015, Nano letters.

Two-dimensional MoS2-enabled flexible rectenna for Wi-Fi-band wireless energy harvesting

M. Dresselhaus, J. Kong, J. Grajal, 2019, Nature.

1200 V GaN vertical fin power field-effect transistors

K. Shepard, T. Palacios, J. Hu, 2017, 2017 IEEE International Electron Devices Meeting (IEDM).