F. Volmer

发表

Toward wafer scale fabrication of graphene based spin valve devices.

B. Beschoten, B. Hong, G. Güntherodt, 2011, Nano letters.

Contact-induced charge contributions to non-local spin transport measurements in Co/MgO/graphene devices

C. Stampfer, B. Beschoten, G. Güntherodt, 2014, 1412.6224.

Charge-induced artifacts in non-local spin transport measurements: How to prevent spurious voltage signals

C. Stampfer, B. Beschoten, F. Volmer, 2021, 2112.02047.

Effect of graphical presentations on insights into a company's financial position: an innovative educational approach to communicating financial information in financial reporting

F. Volmer, 1992 .

Dry-transferred CVD graphene for inverted spin valve devices

C. Stampfer, B. Beschoten, Kenji Watanabe, 2017, 1709.01364.

Transport Spectroscopy of Ultraclean Tunable Band Gaps in Bilayer Graphene

C. Stampfer, B. Beschoten, Kenji Watanabe, 2022, Advanced Electronic Materials.

Intervalley dark trion states with spin lifetimes of 150 ns in WSe 2

C. Stampfer, B. Beschoten, F. Volmer, 2017, 1702.03712.

Role of MgO barriers for spin and charge transport in Co/MgO/graphene nonlocal spin-valve devices

B. Beschoten, E. Maynicke, F. Volmer, 2013, 1305.6484.

Toward wafer scale fabrication of graphene based spin valve devices.

B. Beschoten, B. Hong, G. Güntherodt, 2011, Nano letters.

Charge-Induced Artifacts in Nonlocal Spin-Transport Measurements: How to Prevent Spurious Voltage Signals

C. Stampfer, B. Beschoten, F. Volmer, 2021, Physical Review Applied.

Spin States Protected from Intrinsic Electron-Phonon Coupling Reaching 100 ns Lifetime at Room Temperature in MoSe2.

C. Stampfer, B. Beschoten, M. Verstraete, 2017, Nano letters.

Twist angle dependent interlayer transfer of valley polarization from excitons to free charge carriers in WSe$_2$/MoSe$_2$ heterobilayers

C. Stampfer, B. Beschoten, Kenji Watanabe, 2022, 2211.17210.

Spin Lifetimes Exceeding 12 ns in Graphene Nonlocal Spin Valve Devices.

Takashi Taniguchi, Kenji Watanabe, Bernd Beschoten, 2016, Nano letters.

Unveiling valley lifetimes of free charge carriers in monolayer WSe2.

C. Stampfer, B. Beschoten, Kenji Watanabe, 2019, Nano letters.

How to solve problems in micro- and nanofabrication caused by the emission of electrons and charged metal atoms during e-beam evaporation

C. Stampfer, B. Beschoten, J. Tu, 2020, Journal of Physics D: Applied Physics.

Spin and charge transport in graphene-based spin transport devices with Co/MgO spin injection and spin detection electrodes

C. Stampfer, B. Beschoten, F. Volmer, 2015, 1503.01735.

Nanosecond spin lifetimes in single- and few-layer graphene-hBN heterostructures at room temperature.

Takashi Taniguchi, Kenji Watanabe, Bernd Beschoten, 2014, Nano letters.

Nanosecond spin lifetimes in bottom‐up fabricated bilayer graphene spin‐valves with atomic layer deposited Al 2 O 3 spin injection and detection barriers

C. Stampfer, B. Beschoten, Kenji Watanabe, 2015, 1507.02677.

Twist angle dependent interlayer transfer of valley polarization from excitons to free charge carriers in WSe_2/MoSe_2 heterobilayers

C. Stampfer, B. Beschoten, Kenji Watanabe, 2022, npj 2D Materials and Applications.

Observation of long spin-relaxation times in bilayer graphene at room temperature.

B. Beschoten, A. Pachoud, M. Zeng, 2010, Physical review letters.

Chemical Vapor Deposition Bilayer Graphene Spin Valves with 26 μm Spin Diffusion Length at Room Temperature.

C. Stampfer, B. Beschoten, Kenji Watanabe, 2021, Nano letters.

Valley lifetimes of conduction band electrons in monolayer WSe2

Bernd Beschoten, Mark Lohmann, Manfred Ersfeld, 2020, NanoScience + Engineering.

Simulations on the Influence of Spatially Varying Spin Transport Parameters on the Measured Spin Lifetime in Graphene Non‐Local Spin Valves

C. Stampfer, B. Beschoten, F. Volmer, 2017, 1706.09807.

Suppression of contact-induced spin dephasing in graphene/MgO/Co spin-valve devices by successive oxygen treatments

C. Stampfer, B. Beschoten, E. Maynicke, 2014, 1408.1427.

How the dynamic of photo-induced gate screening complicates the investigation of valley physics in 2D materials

C. Stampfer, B. Beschoten, T. Taniguchi, 2020, 2006.04775.

How Photoinduced Gate Screening and Leakage Currents Dynamically Change the Fermi Level in 2D Materials

C. Stampfer, B. Beschoten, T. Taniguchi, 2020, physica status solidi (RRL) – Rapid Research Letters.

Spin States Protected from Intrinsic Electron-Phonon Coupling Reaching 100 ns Lifetime at Room Temperature in MoSe2.

C. Stampfer, B. Beschoten, M. Verstraete, 2017, Nano letters.