T. Theis

发表

Applications: Nanoelectronics and Nanomagnetics

J. Welser, P. Avouris, S. Wolf, 2011 .

It’s Time to Reinvent the Transistor!

P. Solomon, T. Theis, 2010, Science.

Charge trapping in n-AlxGa1-xAs “insulators” and related device instabilities

T. Theis, B. D. Parker, 1987 .

Statements on Societal Implications

Mark C. Suchman, Felice C. Frankel, G. Whitesides, 2001 .

A PPLICATIONS : N ANOELECTRONICS AND N ANOMAGNETICS

J. Welser, P. Avouris, S. Wolf, 2011 .

Light emission from tunnel junctions on gratings

J. Tsang, T. Theis, J. Kirtley, 1981 .

The DX Center: Evidence for Charge Capture Via an Excited Intermediate State

P. Mooney, T. Theis, 1989 .

Surface plasmon polariton contributions to strokes emission from molecular monolayers on periodic Ag surfaces

J. Tsang, T. Theis, J. Kirtley, 1980 .

Will Nanotechnology Change the Way We Design and Verify Systems? (Panel).

Seth Copen Goldstein, Paul D. Franzon, Robert W. Dutton, 2001, ICCAD 2001.

Long and short range effects in surface enhanced Raman scattering

J. Tsang, T. Theis, J. Kirtley, 1982 .

Strong electric field heating of conduction-band electrons in SiO2

D. Dimaria, T. Theis, J. Kirtley, 1984 .

Pathway to the piezoelectronic transduction logic device.

A. Schrott, W. Haensch, P. Solomon, 2015, Nano letters.

Tunnel Junction Structures

J. Tsang, T. Theis, J. Kirtley, 1982 .

Electroluminescence studies in silicon dioxide films containing tiny silicon islands

Thomas N. Theis, Tung-Sheng Kuan, S. D. Brorson, 1984 .

Light Emission from Electron-Injector Structures

D. Dimaria, T. Theis, J. Kirtley, 1983 .

Diffraction‐grating‐enhanced light emission from tunnel junctions

J. Tsang, T. Theis, J. Kirtley, 1980 .

The End of Moore's Law: A New Beginning for Information Technology

Thomas N. Theis, H.-S. Philip Wong, H. Wong, 2017, Computing in Science & Engineering.

Giant piezoresistive on/off ratios in rare-earth chalcogenide thin films enabling nanomechanical switching.

P. Solomon, G. Martyna, D. Newns, 2013, Nano letters.

Noise spectroscopy of deep level (DX) centers in GaAs‐AlxGa1−xAs heterostructures

S. Wright, P. Mooney, T. Theis, 1988 .

Plasmons in inversion layers

T. Theis, 1980 .

Wavevector dependence of the two-dimensional plasmon dispersion relationship in the (100) silicon inversion layer

J. Kotthaus, P. Stiles, T. Theis, 1978 .

Surface Plasmon Emission as a Probe of Hot-Electron Dynamics

M. Fischetti, D. Dimaria, J. Tsang, 1985 .

Quantum computing: An IBM perspective

David P. DiVincenzo, Mark B. Ketchen, Jerry M. Chow, 2011, IBM J. Res. Dev..

Origin of ‘‘residual’’ persistent photoconductivity in selectively doped GaAs/AlxGa1−xAs heterojunctions

S. Wright, T. Theis, 1986 .

Effect of local alloy disorder on the emission kinetics of deep donors (DX centers) in AlxGa1-xAs

P. Mooney, E. Calleja, T. Theis, 1991 .

Exponential thermal emission transients from DX centers in heavily Si‐doped GaAs

S. Wright, P. Mooney, E. Calleja, 1990 .

In Quest of the “Next Switch”: Prospects for Greatly Reduced Power Dissipation in a Successor to the Silicon Field-Effect Transistor

Paul M. Solomon, Thomas N. Theis, P. Solomon, 2010, Proceedings of the IEEE.

Electron heating in silicon dioxide and off‐stoichiometric silicon dioxide films

Thomas N. Theis, S. D. Brorson, John R. Kirtley, 1985 .

The Deep Donor (DX Center) in GaAs: Determination of the Entropy Term in the Activation Energy

S. Wright, T. Theis, B. D. Parker, 1991 .

Charge transport and trapping phenomena in off‐stoichiometric silicon dioxide films

Donald R. Young, Thomas N. Theis, C. Falcony, 1983 .

Generation of 2D plasmon resonances at multiple wave-vectors; A test of the dispersion relation

J. Kotthaus, P. Stiles, T. Theis, 1978 .

Two-dimensional magnetoplasmon in the silicon inversion layer☆

J. Kotthaus, P. Stiles, T. Theis, 1977 .

Characterization of lattice strain from DX centers and persistent photocarriers in GaAlAs

A. Segmüller, T. Theis, G. Cargill, 1995 .

Bistability of theDX center in GaAs and AlxGa1-xAs, and experimental tests for negativeU of theDX level

P. Mooney, T. Theis, B. D. Parker, 1991 .

Effect of local alloy disorder on emission kinetics of deep donors (DX centers) in AlxGa1−xAs of low Al content

S. Wright, P. Mooney, T. Theis, 1988 .

Alloy Effects on Emission Rates for Deep Donors (DX Centers) in AlXGa1-XAs with Very Low AlAs Mole Fraction

P. Mooney, T. Theis, S. L. Wright, 1991 .

The DX Center: How Complicated Can a Point Defect Be?

T. Theis, 1990 .

The Quantum Metal Ferroelectric Field-Effect Transistor

David J. Frank, Paul M. Solomon, Catherine Dubourdieu, 2014, IEEE Transactions on Electron Devices.

Hot‐electron capture to DX centers in AlxGa1−xAs at low Al mole fractions (x<0.2)

P. Solomon, S. Wright, T. Theis, 1986 .

The future of interconnection technology

Thomas N. Theis, T. Theis, 2000, IBM J. Res. Dev..

Basic Research Needs for Microelectronics: Report of the Office of Science Workshop on Basic Research Needs for Microelectronics, October 23 – 25, 2018

John Shalf, Dushan Boroyevich, Debdeep Jena, 2018 .

The End of Moore's Law: A New Beginning for Information Technology

H. Wong, T. Theis, 2017, Computing in Science & Engineering.

Intersubband resonances in sosmos accumulation layers

M. Uren, F. Fang, T. Theis, 1983 .

New devices for computing

Thomas N. Theis, T. Theis, 2014, 2014 Silicon Nanoelectronics Workshop (SNW).

It’s Time to Reinvent the Transistor!

P. Solomon, T. Theis, 2010, Science.

Beyond the silicon transistor: personal observations

Thomas N. Theis, T. Theis, 2003, Comput. Sci. Eng..