J. Hite

发表

Techniques for the Dry Transfer of Epitaxial Graphene onto Arbitrary Substrates

P. Campbell, K. Hobart, R. Myers-Ward, 2009, ACS nano.

Activation of Mg implanted in GaN by multicycle rapid thermal annealing

Fritz J. Kub, Jennifer K. Hite, Michael A. Mastro, 2014 .

Thermal atomic layer etching of crystalline GaN using sequential exposures of XeF2 and BCl3

S. George, C. Eddy, J. Hite, 2019, Applied Physics Letters.

Demonstration of Enhancement Mode AlN/ultrathin AlGaN/GaN HEMTs Using A Selective Wet Etch Approach

T. Anderson, M. Tadjer, J. Hite, 2010 .

Enhancement mode AlN/ultrathin AlGaN/GaN HEMTs using selective wet etching

K. Hobart, C. Eddy, T. Anderson, 2009, 2009 International Semiconductor Device Research Symposium.

Electrical and structural characterizations of non-polar AlGaN/GaN heterostructures

J. Kim, C. Eddy, J. Hite, 2010 .

Effect of Reduced Extended Defect Density in MOCVD Grown AlGaN/GaN HEMTs on Native GaN Substrates

K. Hobart, A. Koehler, T. Anderson, 2016, IEEE Electron Device Letters.

Broadband measurements of the refractive indices of bulk gallium nitride

Jerry R. Meyer, Christopher G. Brown, I. Vurgaftman, 2014 .

Single n-GaN microwire/p-Silicon thin film heterojunction light-emitting diode.

P. Klein, C. Eddy, Jihyun Kim, 2011, Optics express.

Dry Techniques for Epitaxial Graphene Transfer

P. Campbell, K. Hobart, R. Myers-Ward, 2010 .

Determination of GaN polarity on periodically oriented surfaces

C. Eddy, M. Reshchikov, J. Hite, 2015 .

Dilute Magnetic III-N Semiconductors Based on Rare Earth Doping

J. Zavada, J. Hite, 2019, ECS Journal of Solid State Science and Technology.

Optical and magnetic behavior of erbium-doped GaN epilayers grown by metal-organic chemical vapor deposition

S. Pearton, J. Lin, Hongxing Jiang, 2007 .

Optical and magnetic properties of Eu-doped GaN

A. Steckl, S. Pearton, G. Thaler, 2006 .

Effect of Gd Implantation on the Structural and Magnetic Properties of GaN and AlN

R. M. Frazier, S. Pearton, Y. Park, 2006 .

Ultraviolet photoluminescence from Gd-implanted AlN epilayers

S. Pearton, G. Thaler, J. Lin, 2006 .

Electron backscatter diffraction study of hexagonal boron nitride growth on Cu single-crystal substrates.

C. Eddy, J. Hite, B. Feigelson, 2015, ACS applied materials & interfaces.

Approach for dislocation free GaN epitaxy

C. Eddy, J. Hite, M. Mastro, 2010 .

Challenges to graphene growth on SiC(0 0 0 1‾): Substrate effects, hydrogen etching and growth ambient

M. V. Rao, Jennifer K. Hite, Charles R. Eddy, 2015 .

Symmetric Multicycle Rapid Thermal Annealing: Enhanced Activation of Implanted Dopants in GaN

Jordan D. Greenlee, Francis J. Kub, Jennifer K. Hite, 2015 .

Process Optimization for Selective Area Doping of GaN by Ion Implantation

M. Goorsky, K. Hobart, T. Anderson, 2021, Journal of Electronic Materials.

Multicycle rapid thermal annealing optimization of Mg-implanted GaN: Evolution of surface, optical, and structural properties

K. Hobart, C. Eddy, T. Anderson, 2014 .

Comparison of AlN encapsulants for high-temperature GaN annealing

K. Hobart, C. Eddy, T. Anderson, 2014 .

Role of Capping Material and GaN Polarity on Mg Ion Implantation Activation

T. Anderson, F. Kub, J. Hite, 2019, physica status solidi (a).

Reduced Contact Resistance in GaN Using Selective Area Si Ion Implantation

K. Hobart, A. Koehler, T. Anderson, 2019, IEEE Transactions on Semiconductor Manufacturing.

Improvements in the Annealing of Mg Ion Implanted GaN and Related Devices

Jordan D. Greenlee, Francis J. Kub, Jennifer K. Hite, 2016, IEEE Transactions on Semiconductor Manufacturing.

Progress in periodically oriented III-nitride materials

J. Hite, 2016 .

Polarity dependent implanted p-type dopant activation in GaN

T. Anderson, F. Kub, J. Hite, 2019, Japanese Journal of Applied Physics.

Process optimization of multicycle rapid thermal annealing of Mg-implanted GaN

K. Hobart, C. Eddy, T. Anderson, 2014, 2014 IEEE Workshop on Wide Bandgap Power Devices and Applications.

GaN-based ultraviolet light-emitting diodes with AuCl₃-doped graphene electrodes.

F. Ren, K. Baik, S. Pearton, 2013, Optics express.

Selective switching of GaN polarity on Ga-polar GaN using atomic layer deposited Al2O3

C. Eddy, R. Goswami, F. Kub, 2014 .

Correlation of threading screw dislocation density to GaN 2-DEG mobility

C. Eddy, D. Meyer, J. Hite, 2014 .

Periodically oriented gallium nitride: Materials development

I. Vurgaftman, J. Freitas, C. Eddy, 2014, 2014 Conference on Lasers and Electro-Optics (CLEO) - Laser Science to Photonic Applications.

Initiating polarity inversion in GaN growth using an AlN interlayer

C. Eddy, M. Twigg, F. Kub, 2011 .

Nickel Foam as a Substrate for III-nitride Nanowire Growth

C. Eddy, F. Kub, N. Nepal, 2013, 2009.02143.

Dense nanocrystalline yttrium iron garnet films formed at room temperature by aerosol deposition

Scooter D. Johnson, J. Hite, E. Glaser, 2016 .

Effect of GaN surface treatment on Al2O3/n-GaN MOS capacitors

C. Eddy, H. Meyer, N. Nepal, 2015 .

Impact of surface treatments on high-κ dielectric integration with Ga-polar and N-polar GaN

V. Wheeler, C. Eddy, N. Nepal, 2014 .

Dry Techniques for Epitaxial Graphene Transfer: Wafer Bonding Approaches for Expanded Functionality

P. Campbell, K. Hobart, R. Myers-Ward, 2010 .

Morphology characterization of argon-mediated epitaxial graphene on C-face SiC

Jr., P. Campbell, R. Myers-Ward, 2010, 1007.5064.

Observations on C-Face SiC Graphene Growth in Argon

V. Wheeler, R. Myers-Ward, C. Eddy, 2011 .

Violet electroluminescence from p-GaN thin film/n-GaN nanowire homojunction

C. Eddy, J. Hite, M. Mastro, 2010 .

Magnetic III-N Semiconductors Based on Rare Earth Doping

J. Zavada, J. Hite, 2019, ECS Transactions.

Polarization and Space-Charge-Limited Current in III-Nitride Heterostructure Nanowires

P. Pehrsson, C. Eddy, Jihyun Kim, 2011, IEEE Transactions on Electron Devices.

Epitaxial graphene surface preparation for atomic layer deposition of Al2O3

V. Wheeler, C. Eddy, D. Gaskill, 2011 .

Effect of 5 MeV proton irradiation damage on performance of β-Ga2O3 photodetectors

F. Ren, S. Pearton, C. Eddy, 2016 .

Electrochemically Prepared Polycrystalline Copper Surface for the Growth of Hexagonal Boron Nitride

M. Fuhrer, S. Hernández, J. Hite, 2017 .

Quantum linear magnetoresistance in multilayer epitaxial graphene.

P. Campbell, F. Perkins, R. Myers-Ward, 2010, Nano letters.

Exploiting Phonon‐Resonant Near‐Field Interaction for the Nanoscale Investigation of Extended Defects

T. Taubner, R. Stahlbush, N. Bassim, 2020, Advanced Functional Materials.

Characterization of wide band gap semiconductors using electron channeling contrast imaging: A review of applications and potential

J. Hite, 2014 .

High thermal conductivity and thermal boundary conductance of homoepitaxially grown gallium nitride (GaN) thin films

M. Goorsky, Zeyu Liu, T. Luo, 2021, Physical Review Materials.

Thermal conductivity measurements of sub-surface buried substrates by steady-state thermoreflectance.

Y. Koh, W. Doolittle, P. Hopkins, 2021, The Review of scientific instruments.

Opportunities and Challenges in MOCVD of βGa2O3 for Power Electronic Devices

Jr., F. Ren, S. Pearton, 2019, International Journal of High Speed Electronics and Systems.

Development of solar-blind photodetectors based on Si-implanted β-Ga(2)O(3).

Jihyun Kim, Younghun Jung, C. Eddy, 2015, Optics express.

Reduced Self-Heating in AlGaN/GaN HEMTs Using Nanocrystalline Diamond Heat-Spreading Films

M. A. Mastro, C. R. Eddy, J. Butler, 2010, IEEE Electron Device Letters.

Assessment of GaN Surface Pretreatment for Atomic Layer Deposited High-k Dielectrics

David J. Meyer, Jennifer K. Hite, Neeraj Nepal, 2011 .

Influence of HVPE substrates on homoepitaxy of GaN grown by MOCVD

Jennifer K. Hite, Michael A. Mastro, Travis J. Anderson, 2018, Journal of Crystal Growth.

Effect of Surface Morphology on Diode Performance in Vertical GaN Schottky Diodes

Jennifer K. Hite, Michael A. Mastro, Travis J. Anderson, 2017 .

Selective chemical etch of gallium nitride by phosphoric acid

J. Freitas, C. Eddy, H. Kim, 2012 .

Efficient Activation and High Mobility of Ion-Implanted Silicon for Next-Generation GaN Devices

K. Hobart, M. Tadjer, J. Hite, 2023, Crystals.

Role of growth conditions on magnetic properties of AlCrN grown by molecular beam epitaxy

R. M. Frazier, S. Pearton, G. Thaler, 2005 .

Structural, Optical, and Electrical Characterization of Monoclinic β-Ga2O3 Grown by MOVPE on Sapphire Substrates

Jaime A. Freitas, Jordan D. Greenlee, Fritz J. Kub, 2016, Journal of Electronic Materials.

Effect of Si Co Doping on Ferromagnetic Properties of GaGdN

R. M. Frazier, G. Thaler, C. Abernathy, 2007 .

Nanocrystalline Diamond Integration with III-Nitride HEMTs

B. Pate, T. Feygelson, K. Hobart, 2017 .

Nanocrystalline Diamond for near Junction Heat Spreading in GaN Power HEMTs

B. Pate, T. Feygelson, K. Hobart, 2013, 2013 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS).

Enhancement of light extraction efficiency of ultraviolet light emitting diodes by patterning of SiO2 nanosphere arrays

Jennifer K. Hite, Michael A. Mastro, C. R. Eddy, 2009 .

Effect of GaN Substrate Properties on Vertical GaN PiN Diode Electrical Performance

K. Hobart, A. Koehler, T. Anderson, 2021, Journal of Electronic Materials.

Long range, non-destructive characterization of GaN substrates for power devices

Andrew D. Koehler, Fritz J. Kub, Jennifer K. Hite, 2019, Journal of Crystal Growth.

Substrate-Dependent Effects on the Response of AlGaN/GaN HEMTs to 2-MeV Proton Irradiation

Jordan D. Greenlee, Francis J. Kub, Andrew D. Koehler, 2014, IEEE Electron Device Letters.

Deep-UV photoemission electron microscopy for imaging nanoscale heterogeneity and defects in gallium nitride

J. Hite, M. Mastro, S. Pookpanratana, 2023, OPTO.

Epitaxial Growth of Cubic and Hexagonal InN Thin Films via Plasma-Assisted Atomic Layer Epitaxy

M. Mehl, C. Eddy, S. Qadri, 2013 .

Development of periodically oriented gallium nitride for non-linear optics [Invited]

Jaime A. Freitas, Jerry R. Meyer, Steven R. Bowman, 2012 .

Defect Characterization of Multicycle Rapid Thermal Annealing Processed p-GaN for Vertical Power Devices

C. Li, M. Goorsky, K. Hobart, 2019, ECS Journal of Solid State Science and Technology.

Influence of plasma species on the early-stage growth kinetics of epitaxial InN grown by plasma-enhanced atomic layer deposition

Scooter D. Johnson, K. Ludwig, C. Eddy, 2022, Journal of Vacuum Science & Technology A.

Plasma-assisted atomic layer epitaxial growth of aluminum nitride studied with real time grazing angle small angle x-ray scattering

Virginia R. Anderson, Scooter D. Johnson, A. Kozen, 2017 .

Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures

Virginia R. Anderson, C. Eddy, N. Nepal, 2015 .

Perspectives on future directions in III-N semiconductor research

C. Eddy, N. Nepal, J. Hite, 2013 .

Selective p-type Doping of GaN:Si by Mg Ion Implantation and Multicycle Rapid Thermal Annealing

Jordan D. Greenlee, J. Freitas, K. Hobart, 2016 .

Multicycle rapid thermal annealing technique and its application for the electrical activation of Mg implanted in GaN

M. Abraham, C. Eddy, T. Anderson, 2012 .

Epitaxial growth of AlN films via plasma-assisted atomic layer epitaxy

C. Eddy, S. Qadri, N. Mahadik, 2013 .

Atomic layer epitaxy for quantum well nitride-based devices

Jaime A. Freitas, Jennifer K. Hite, Neeraj Nepal, 2016, SPIE OPTO.

An AlN/Ultrathin AlGaN/GaN HEMT Structure for Enhancement-Mode Operation Using Selective Etching

K. Hobart, C. Eddy, T. Anderson, 2009, IEEE Electron Device Letters.

Gallium nitride light emitter on a patterned sapphire substrate for improved defectivity and light extraction efficiency

C. Eddy, J. Hite, M. Mastro, 2011 .

Emission enhancement from nonpolar a-plane III-nitride nanopillar

C. Eddy, N. Nepal, J. Hite, 2011 .

Inductively coupled plasma etching of nano-patterned sapphire for flip-chip GaN light emitting diode applications

Byung Jae Kim, C. Eddy, J. Bang, 2008 .

Epitaxial graphene nucleation on C-face silicon carbide.

R. Myers-Ward, C. Eddy, D. Gaskill, 2011, Nano letters.

(Invited) From MRTA to SMRTA: Improvements in Activating Implanted Dopants in GaN

K. Hobart, T. Anderson, J. Greenlee, 2015 .

Improved Vertical GaN Schottky Diodes with Ion Implanted Junction Termination Extension

Jordan D. Greenlee, Fritz J. Kub, Jennifer K. Hite, 2016 .

Nitrogen-polar gallium nitride substrates as solid-state pH-selective potentiometric sensors

C. Eddy, Takashi Ito, J. Hite, 2009 .

Large-area transparent conductive few-layer graphene electrode in GaN-based ultra-violet light-emitting diodes

Byung Jae Kim, K. Baik, C. Eddy, 2011 .

Elevated temperature performance of Si-implanted solar-blind β-Ga2O3 photodetectors

F. Ren, S. Pearton, C. Eddy, 2016 .

Optical and electrical characterization of AlGaN/GaN high electron mobility transistors irradiated with 5 MeV protons

Jaime A. Freitas, Jennifer K. Hite, Michael A. Mastro, 2011 .

Profiling the temperature distribution in AlGaN/GaN HEMTs with nanocrystalline diamond heat spreading layers

B. Pate, T. Feygelson, K. Hobart, 2012 .

GaN vertical and lateral polarity heterostructures on GaN substrates

Fritz J. Kub, Jennifer K. Hite, Michael A. Mastro, 2011 .

Post-annealing behavior of Ni/Au Schottky contact on non-polar a-plane GaN

C. Eddy, J. Hite, M. Mastro, 2010 .

Homoepitaxial GaN micropillar array by plasma-free photo-enhanced metal-assisted chemical etching

Xiuling Li, S. Qadri, J. Hite, 2021 .

Nanocrystalline diamond capped AlGaN/GaN high electron mobility transistors via a sacrificial gate process

B. Pate, T. Feygelson, K. Hobart, 2016 .

Controlled fabrication of gallium nitride nano- and micro-wires by dielectrophoretic force and torque

C. Eddy, J. Hite, M. Mastro, 2010 .

Nanostructured n-ZnO / thin film p-silicon heterojunction light-emitting diodes.

C. Eddy, Jihyun Kim, J. Hite, 2011, Optics express.

Polarization fields in III-nitride nanowire devices

George T. Wang, C. Eddy, Jihyun Kim, 2010, Nanotechnology.

Buried graphene electrodes on GaN-based ultra-violet light-emitting diodes

Byung Jae Kim, F. Ren, S. Pearton, 2012 .

Degradation mechanisms of AlGaN/GaN HEMTs on sapphire, Si, and SiC substrates under proton irradiation

P. Specht, K. Hobart, A. Koehler, 2014, 2014 IEEE Workshop on Wide Bandgap Power Devices and Applications.

Space-charge-limited currents and trap characterization in coaxial AlGaN/GaN nanowires

P. Pehrsson, C. Eddy, B. Simpkins, 2011 .

Transparent conductive graphene electrode in GaN-based ultra-violet light emitting diodes.

C. Eddy, Jihyun Kim, Byung-Jae Kim, 2010, Optics express.

High growth-rate MOCVD homoepitaxial [beta]-Ga2O3 films and MOSFETs for power electronics applications

J. Freitas, A. Osinsky, K. Hobart, 2021 .

Characterization of β-Ga2O3 homoepitaxial films and MOSFETs grown by MOCVD at high growth rates

J. Freitas, A. Osinsky, K. Hobart, 2020, Radar Sensor Technology XXV.

A Review of Homoepitaxy of III-Nitride Semiconductors by Metal Organic Chemical Vapor Deposition and the Effects on Vertical Devices

J. Hite, 2023, Crystals.

Site control of quantum emitters in gallium nitride by polarity

M. Toth, I. Aharonovich, J. Hite, 2021 .

Editors' Choice—On the Radiation Tolerance of AlGaN/GaN HEMTs

David I. Shahin, K. Hobart, A. Koehler, 2016 .

Electrical and Optical Characterization of AlGaN/GaN HEMTs with In Situ and Ex Situ Deposited SiNx Layers

Fritz J. Kub, Jennifer K. Hite, Michael A. Mastro, 2010 .

Electrothermal evaluation of thick GaN epitaxial layers and AlGaN/GaN high-electron-mobility transistors on large-area engineered substrates

O. Aktas, K. Hobart, A. Koehler, 2017 .

Methodology and implementation of a tunable deep-ultraviolet laser source for photoemission electron microscopy.

R. Elmquist, J. Hite, S. Pookpanratana, 2023, Ultramicroscopy.

Invited) Nanocrystalline Diamond for Near Junction Heat Spreading in GaN Power HEMTs

B. Pate, T. Feygelson, K. Hobart, 2014 .

Growth and spectroscopic characterization of monolayer and few-layer hexagonal boron nitride on metal substrates.

V. Wheeler, S. Hernández, J. Hite, 2015, Nanoscale.

GaN Power Transistors with Integrated Thermal Management

Tatyana I. Feygelson, Mario G. Ancona, Bradford B. Pate, 2013 .

Plasma-free Anisotropic Etching of GaN

Xiuling Li, J. Hite, Shunya Namiki, 2021, 2021 Conference on Lasers and Electro-Optics (CLEO).

Achieving clean epitaxial graphene surfaces suitable for device applications by improved lithographic process

M. V. Rao, A. Koehler, V. Wheeler, 2014 .

Chemical etching behaviors of semipolar (11̄22) and nonpolar (11̄20) gallium nitride films.

K. Baik, C. Eddy, Jihyun Kim, 2014, Physical chemistry chemical physics : PCCP.

(Invited) Failure Mechanisms in AlGaN/GaN HEMTs Irradiated with 2MeV Protons

P. Specht, K. Hobart, A. Koehler, 2015 .

GaN single crystals of different habit grown from solution at near atmospheric pressure

P. Klein, J. A. Freitas, J. Tischler, 2010 .

Growth and spectroscopic characterization of monolayer and few-layer hexagonal boron nitride on metal substrates.

V. Wheeler, S. Hernández, J. Hite, 2015, Nanoscale.

Electroluminescence from ZnO nanoflowers/GaN thin film p-n heterojunction

Jennifer K. Hite, Michael A. Mastro, Charles R. Eddy, 2010 .

Electrical and optical characterization of GaN micro-wires

C. Eddy, J. Hite, M. Mastro, 2011 .

Wet etching of non-polar gallium nitride light-emitting diode structure for enhanced light extraction

C. Eddy, Jihyun Kim, H. Kim, 2011 .

: High thermal conductivity and thermal boundary conductance of homoepitaxially grown gallium nitride (GaN) thin ﬁlms

M. Goorsky, Zeyu Liu, T. Luo, 2021 .

Photo-enhanced chemical etched GaN LED on silicon substrate

C. Eddy, H. Kim, J. Hite, 2011 .

Morphology characterization of argon-mediated epitaxial graphene on C-face SiC

Yang Yang, Jennifer K. Hite, Charles R. Eddy, 2010, 1007.5064.

Insulating gallium oxide layer produced by thermal oxidation of gallium‐polar GaN

C. Eddy, H. Meyer, N. Nepal, 2014 .

Experimental determination of critical thickness limitations of (010) β -(AlxGa1−x)2O3 heteroepitaxial films

M. Goorsky, K. Hobart, J. S. Lundh, 2023, Applied Physics Letters.