S. Takeuchi

发表

Microstructural analysis in the depth direction of a heteroepitaxial AlN thick film grown on a trench-patterned template by nanobeam X-ray diffraction

K. Hiramatsu, K. Sumitani, Y. Imai, 2018 .

Seedless Templated Growth of Hetero-Nanostructures for Novel Microelectronics Devices

H. Bender, F. Iacopi, R. Loo, 2009 .

High Quality Ge Virtual Substrates on Si Wafers with Standard STI Patterning

Guy Brammertz, Matty Caymax, Shotaro Takeuchi, 2010 .

Leakage current analysis for dislocations in Na-flux GaN bulk single crystals by conductive atomic force microscopy

Y. Mori, Y. Mori, S. Takeuchi, 2018 .

growth using Si 3 H 8 by low temperature chemical vapor deposition

M. Caymax, N. D. Nguyen, S. Takeuchi, 2011 .

Ultrathin-body Ge-on-insulator wafers fabricated with strongly bonded thin Al2O3/SiO2 hybrid buried oxide layers

K. Ikeda, Y. Kamimuta, T. Tezuka, 2014 .

Depth-resolved analysis of lattice distortions in high-Ge-content SiGe/compositionally graded SiGe films using nanobeam x-ray diffraction

M. Caymax, Y. Imai, S. Kimura, 2018, Semiconductor Science and Technology.

Local piezoelectric properties in Na-flux GaN bulk single crystals

S. Takeuchi, T. Tohei, A. Sakai, 2020 .

Control of dislocation morphology and lattice distortion in Na-flux GaN crystals

K. Sumitani, Y. Imai, S. Kimura, 2017 .

Microscopic crystalline structure of a thick AlN film grown on a trench-patterned AlN/α-Al2O3 template

K. Hiramatsu, Y. Imai, S. Kimura, 2015 .

Microstructural analysis of an epitaxial AlN thick film/trench-patterned template by three-dimensional reciprocal lattice space mapping technique

K. Hiramatsu, Y. Imai, S. Kimura, 2016 .

In-situ Ga doping of fully strained Ge1-xSnx heteroepitaxial layers grown on Ge(001) substrates

R. Loo, M. Caymax, W. Vandervorst, 2012 .

Growth of highly strain-relaxed Ge1−xSnx/virtual Ge by a Sn precipitation controlled compositionally step-graded method

Y. Shimura, O. Nakatsuka, S. Takeuchi, 2008 .

Tensile strained Ge layers on strain-relaxed Ge1 − xSnx/virtual Ge substrates

O. Nakatsuka, S. Takeuchi, A. Sakai, 2008 .

Fabrication of high quality Ge virtual substrates by selective epitaxial growth in shallow trench isolated Si (001) trenches

Gang Wang, Wilfried Vandervorst, Marc Heyns, 2010 .

Myoglobin-based non-precious metal carbon catalysts for an oxygen reduction reaction

Takashi Hayashi, S. Takeuchi, A. Sakai, 2015 .

Mobility Behavior of Ge1-xSnx Layers Grown on Silicon-on-Insulator Substrates

Akira Sakai, Yosuke Shimura, Shigeaki Zaima, 2010 .

Strained Ge and Ge1-xSnx Technology for Future CMOS Devices

Y. Shimura, O. Nakatsuka, S. Takeuchi, 2011 .

Quantification of local strain distributions in nanoscale strained SiGe FinFET structures

Akira Sakai, Conal E. Murray, Shotaro Takeuchi, 2017 .

Tomographic Mapping Analysis in the Depth Direction of High-Ge-Content SiGe Layers with Compositionally Graded Buffers Using Nanobeam X-ray Diffraction.

M. Caymax, Y. Imai, S. Kimura, 2017, ACS applied materials & interfaces.

Zero-bias Si backward diodes detectors incorporating P and B δ-doping layers grown by chemical vapor deposition

P. R. Berger, R. Loo, M. Caymax, 2009, 2009 International Semiconductor Device Research Symposium.

Characterization of Ge Films on Si(001) Substrates Grown by Nanocontact Epitaxy

S. Okamoto, J. Kikkawa, S. Takeuchi, 2012, 2012 International Silicon-Germanium Technology and Device Meeting (ISTDM).

Local Strain Distribution in AlN Thick Films Analyzed by X-Ray Microdiffraction

K. Hiramatsu, S. Kimura, S. Takeuchi, 2014 .

Anisotropic crystalline morphology of epitaxial thick AlN films grown on triangular‐striped AlN/sapphire template

K. Hiramatsu, S. Takeuchi, H. Miyake, 2014 .

Cross-sectional X-ray microdiffraction study of a thick AlN film grown on a trench-patterned AlN/α-Al2O3 template

K. Hiramatsu, J. Kikkawa, O. Sakata, 2013 .

Dislocation behavior of surface-oxygen-concentration controlled Si wafers

Araki Koji, K. Izunome, S. Takeuchi, 2014 .

Growth of Ge1 − xSnx heteroepitaxial layers with very high Sn contents on InP(001) substrates

Marika Nakamura, Y. Shimura, O. Nakatsuka, 2012 .

Growth and Characterization of Ge1-xSnx Layers for High Mobility Tensile-Strained Ge Channels of CMOS Devices

Y. Shimura, O. Nakatsuka, S. Takeuchi, 2010 .

Si1−xGex growth using Si3H8 by low temperature chemical vapor deposition

R. Loo, M. Caymax, N. D. Nguyen, 2010 .

Analysis of Ti valence states in resistive switching regions of a rutile TiO2−x four-terminal memristive device

S. Takeuchi, T. Tohei, A. Sakai, 2018 .

Epitaxial iron oxide nanocrystals with memory function grown on Si substrates

H. Matsui, Kentaroh Watanabe, T. Ishibe, 2016 .

Use of p- and n-type vapor phase doping and sub-melt laser anneal for extension junctions in sub-32 nm CMOS technology

E. Rosseel, O. Richard, H. Bender, 2010 .

Demonstrative operation of four-terminal memristive devices fabricated on reduced TiO2 single crystals

S. Takeuchi, T. Tohei, N. Ikarashi, 2019, Scientific Reports.

A study of deformation-produced deep levels inn-GaAs using deep level transient capacitance spectroscopy

S. Takeuchi, K. Maeda, K. Maeda, 1980 .

Dislocation confinement in the growth of Na flux GaN on metalorganic chemical vapor deposition-GaN

S. Takeuchi, Y. Mori, Yoshiaki Nakamura, 2015 .

Effect of atomic deuterium irradiation on initial growth of Sn and Ge1−xSnx on Ge(0 0 1) substrates

Y. Shimura, O. Nakatsuka, S. Takeuchi, 2012 .

Scanning tunneling microscopy observation of initial growth of Sn and Ge1−xSnx layers on Ge(0 0 1) substrates

O. Nakatsuka, S. Takeuchi, A. Sakai, 2008 .

Resistive switching characteristics of isolated core-shell iron oxide/germanium nanocrystals epitaxially grown on Si substrates

H. Matsui, Kentaroh Watanabe, S. Kimura, 2018 .

Epitaxial multilayers of β-FeSi2 nanodots/Si for Si-based nanostructured electronic materials

Kentaroh Watanabe, J. Kikkawa, S. Takeuchi, 2017 .

Independent control of electrical and heat conduction by nanostructure designing for Si-based thermoelectric materials

Kentaroh Watanabe, K. Sawano, S. Takeuchi, 2016, Scientific Reports.

Fabrication of Carrier-Doped Si Nanoarchitecture for Thermoelectric Material by Ultrathin SiO2 Film Technique

Kentaroh Watanabe, T. Ishibe, S. Takeuchi, 2016, Journal of Electronic Materials.

Phonon transport control by nanoarchitecture including epitaxial Ge nanodots for Si-based thermoelectric materials

S. Takeuchi, A. Sakai, S. Yamasaka, 2015, Scientific Reports.

Fabrication of Si Thermoelectric Nanomaterials Containing Ultrasmall Epitaxial Ge Nanodots with an Ultrahigh Density

N. Tanaka, Yuta Yamamoto, S. Arai, 2015, Journal of Electronic Materials.

Initial growth behaviors of SiGeC in SiGe and C alternate deposition

O. Nakatsuka, S. Takeuchi, A. Sakai, 2005 .

Control of strain relaxation behavior of Ge1−xSnx buffer layers

Akira Sakai, Yosuke Shimura, Shigeaki Zaima, 2011 .

Influence of Si1−xGex interlayer on the initial growth of SiGeC on Si(1 0 0)

O. Nakatsuka, S. Takeuchi, A. Sakai, 2004 .

Molecular beam deposition of Al2O3 on p-Ge(001)/Ge0.95Sn0.05 heterostructure and impact of a Ge-cap interfacial layer

Wilfried Vandervorst, Yosuke Shimura, Matty Caymax, 2011 .

Growth and structure evaluation of strain-relaxed Ge1−xSnx buffer layers grown on various types of substrates

Akira Sakai, Shigeaki Zaima, Osamu Nakatsuka, 2006 .

Control of Interfacial Properties of Al2O3/Ge Gate Stack Structure Using Radical Nitridation Technique

H. Kondo, O. Nakatsuka, Kimihiko Kato, 2011 .

Luminescence induced by tunnelling recombination between neutral silver atoms and Vk centres in alkali halides

N. Itoh, M. Saidoh, S. Takeuchi, 1979 .

Vapor Phase Doping with N-type Dopant into Silicon by Atmospheric Pressure Chemical Vapor Deposition

R. Loo, M. Caymax, T. Conard, 2008 .

Formation of Ni(Ge1−xSnx) layers with solid-phase reaction in Ni/Ge1−xSnx/Ge systems

R. Loo, M. Caymax, B. Vincent, 2011 .

Ge1−xSnx stressors for strained-Ge CMOS

Roger Loo, Akira Sakai, Yosuke Shimura, 2011 .

Characterization of GeSn materials for future Ge pMOSFETs source/drain stressors

Yosuke Shimura, Matty Caymax, Shigeaki Zaima, 2011 .

Demonstrative operation of four-terminal memristive devices fabricated on reduced TiO2 single crystals

S. Takeuchi, T. Tohei, A. Sakai, 2019, Scientific Reports.

Crystalline property analysis of semipolar (20–21) GaN on (22–43) patterned sapphire substrate by X‐ray microdiffraction and transmission electron microscopy

Y. Hashimoto, Y. Imai, S. Kimura, 2015 .

Thickness and growth condition dependence of crystallinity in semipolar (20–21) GaN films grown on (22–43) patterned sapphire substrates

Y. Hashimoto, K. Yamane, S. Takeuchi, 2015 .

Si passivation for Ge pMOSFETs: Impact of Si cap growth conditions

B. Douhard, T. Verbiest, R. Loo, 2011 .

Growth and Characterization of Heteroepitaxial Layers of GeSiSn Ternary Alloy

N. Taoka, O. Nakatsuka, K. Izunome, 2013 .

Si/SiGe Resonant Interband Tunneling Diodes Incorporating $\delta$-Doping Layers Grown by Chemical Vapor Deposition

P. R. Berger, R. Loo, M. Caymax, 2009, IEEE Electron Device Letters.

Epitaxial Ge on Standard STI Patterned Si Wafers: High Quality Virtual Substrates for Ge pMOS and III/V nMOS

R. Loo, M. Caymax, G. Brammertz, 2009 .