B. Haskell

发表

White X‐ray microdiffraction analysis of defects, strain and tilts in a free standing GaN film

S. Nakamura, G. Ice, R. Barabash, 2008 .

Demonstration of Nonpolar m-Plane InGaN/GaN Light-Emitting Diodes on Free-Standing m-Plane GaN Substrates

S. Denbaars, S. Nakamura, U. Mishra, 2005 .

Origin of defect-insensitive emission probability in In-containing (Al,In,Ga)N alloy semiconductors

A. Uedono, S. Denbaars, S. Kamiyama, 2006, Nature materials.

Structural Characterization of Thick GaN Films Grown on Free-Standing GaN Seeds by the Ammonothermal Method Using Basic Ammonia

S. Nakamura, K. Fujito, J. Speck, 2005 .

Prospective emission efficiency and in-plane light polarization of nonpolar m-plane InxGa1−xN∕GaN blue light emitting diodes fabricated on freestanding GaN substrates

S. Denbaars, S. Nakamura, S. Keller, 2006 .

Nonpolar InGaN∕GaN emitters on reduced-defect lateral epitaxially overgrown a-plane GaN with drive-current-independent electroluminescence emission peak

James S. Speck, Shuji Nakamura, Umesh K. Mishra, 2004 .

Polarized Light Emission from Nonpolar InGaN Light-Emitting Diodes Grown on a Bulk m-Plane GaN Substrate

S. Denbaars, S. Nakamura, U. Mishra, 2005 .

Intensity dependent time‐resolved photoluminescence studies of GaN/AlGaN multiple quantum wells of varying well width on laterally overgrown a‐plane and planar c‐plane GaN

S. Denbaars, S. Nakamura, J. Speck, 2005 .

A semipolar (10- 1 - 3 ) InGaN/GaN green light emitting diode

S. Denbaars, S. Nakamura, J. Speck, 2005 .

Optical properties of nonpolar a-plane GaN layers

S. Nakamura, J. Speck, P. Paskov, 2006 .

Nonpolar and Semipolar GaN Growth by HVPE

P. Fini, B. Haskell, 2010 .

Radiative and nonradiative lifetimes in nonpolar m-plane InxGa1−xN∕GaN multiple quantum wells grown on GaN templates prepared by lateral epitaxial overgrowth

S. Denbaars, S. Nakamura, S. Keller, 2007 .

Microstructure and enhanced morphology of planar nonpolar m-plane GaN grown by hydride vapor phase epitaxy

S. Denbaars, S. Nakamura, J. Speck, 2005 .

Structural and Electroluminescence Characteristics of Nonpolar Light-Emitting Diodes Fabricated on Lateral Epitaxially Overgrown a-Plane GaN

S. Denbaars, S. Nakamura, U. Mishra, 2006 .

Origin of localized excitons in In-containing three-dimensional bulk (Al,In,Ga)N alloy films probed by time-resolved photoluminescence and monoenergetic positron annihilation techniques

A. Uedono, S. Denbaars, S. Kamiyama, 2007 .

Exciton dynamics in nonpolar (110) InGaN/GaN multiple quantum wells grown on GaN templates prepared by lateral epitaxial overgrowth

S. Denbaars, S. Nakamura, S. Keller, 2006 .

Characterization of Planar Semipolar Gallium Nitride Films on Sapphire Substrates

S. Nakamura, J. Speck, B. Haskell, 2006 .

Defect-mediated surface morphology of nonpolar m-plane GaN

S. Denbaars, S. Nakamura, J. Speck, 2007 .

Structural and Optical Properties of Nonpolar InGaN/GaN Multiple Quantum Wells Grown on Planar and Lateral Epitaxially Overgrown m-Plane GaN Films

S. Denbaars, S. Nakamura, U. Mishra, 2007 .

Direct heteroepitaxial growth of thick AlN layers on sapphire substrates by hydride vapor phase epitaxy

D. S. Kamber, S. Denbaars, S. Nakamura, 2006 .

Effect of anisotropic strain on phonons in a-plane and c-plane GaN layers

S. Nakamura, J. Off, J. Speck, 2007 .

Assessment of phonon mode characteristics via infrared spectroscopic ellipsometry on a‐plane GaN

P. Paskov, H. Arwin, P. Fini, 2006 .

Anisotropic strain and phonon deformation potentials in GaN

S. Nakamura, J. Speck, P. Paskov, 2007 .

Gallium adsorption onto (112̄0) gallium nitride surfaces

James S. Speck, Shuji Nakamura, Melvin McLaurin, 2004 .

Localized exciton dynamics in nonpolar (112¯0) InxGa1−xN multiple quantum wells grown on GaN templates prepared by lateral epitaxial overgrowth

James S. Speck, Shuji Nakamura, Umesh K. Mishra, 2005 .

Demonstration of a semipolar (101¯3¯) InGaN∕GaN green light emitting diode

James S. Speck, Shuji Nakamura, Robert M. Farrell, 2005 .

Defect reduction in (112̄0) a-plane gallium nitride via lateral epitaxial overgrowth by hydride vapor-phase epitaxy

James S. Speck, Shuji Nakamura, S. P. DenBaars, 2003 .

Nonpolar m-Plane Blue-Light-Emitting Diode Lamps with Output Power of 23.5 mW under Pulsed Operation

James S. Speck, Shuji Nakamura, Umesh K. Mishra, 2006 .

Milliwatt Power Blue InGaN/GaN Light-Emitting Diodes on Semipolar GaN Templates

James S. Speck, Shuji Nakamura, Umesh K. Mishra, 2005 .

Characterization of Planar Semipolar Gallium Nitride Films on Spinel Substrates

James S. Speck, Shuji Nakamura, Feng Wu, 2005 .

Growth of gallium nitride via fluid transport in supercritical ammonia

S. Nakamura, K. Fujito, J. Speck, 2005 .

Limiting factors of room-temperature nonradiative photoluminescence lifetime in polar and nonpolar GaN studied by time-resolved photoluminescence and slow positron annihilation techniques

James S. Speck, Shuji Nakamura, Takayuki Sota, 2005 .

Stress and wafer bending of a-plane GaN layers on r-plane sapphire substrates

S. Nakamura, P. Paskov, P. Fini, 2006 .

Structural and morphological characteristics of planar (112̄0) a-plane gallium nitride grown by hydride vapor phase epitaxy

James S. Speck, Shuji Nakamura, S. P. DenBaars, 2003 .

Progress in the growth of nonpolar gallium nitride

James S. Speck, Shuji Nakamura, S. P. DenBaars, 2007 .

Improved quality nonpolar a ‐plane GaN/AlGaN UV LEDs grown with sidewall lateral epitaxial overgrowth (SLEO)

S. Denbaars, S. Nakamura, U. Mishra, 2008 .

Varistor Behavior at Twin Boundaries in ZnO

B. Haskell, S. Souri, M. Helfand, 2004 .

Photoluminescence of a ‐plane GaN: comparison between MOCVD and HVPE grown layers

James S. Speck, Shuji Nakamura, Detlef Hommel, 2006 .

Microscopic emission properties of nonpolar α-plane GaN grown by HVPE

B. Monemar, T. Paskova, R. Kroeger, 2006, SPIE OPTO.

Improved quantum efficiency in nonpolar (1120) AlGaN/GaN quantum wells grown on GaN prepared by lateral epitaxial overgrowth

James S. Speck, Shuji Nakamura, S. P. DenBaars, 2004 .

Characterization of nanoscale electronic structure in nonpolar GaN using scanning capacitance microscopy

S. Denbaars, E. Yu, S. Nakamura, 2008 .

Properties of nonpolar a-plane InGaN∕GaN multiple quantum wells grown on lateral epitaxially overgrown a-plane GaN

James S. Speck, Shuji Nakamura, Umesh K. Mishra, 2005 .