S. Figge

发表

Characterization of growth defects in thin GaN layers with X‐ray microbeam

R. F. Davis, J. Budai, Wenjun Liu, 2007 .

Mesoscale Plastic Deformation in the Shock Recovered Metals from White Beam Diffraction

J. Wark, J. Belak, G. Campbell, 2006 .

Spatially Resolved Characterization of Microstructure, Defects and Tilts in GaN Layers Grown on Si(111) Substrates by Maskless Cantilever Epitaxy

Wing Kam Liu, J. Budai, G. Ice, 2006 .

Heat generation and dissipation in GaN‐based light emitting devices

M. Ilegems, C. Zellweger, S. Figge, 2003 .

Ion sensitive AlGaN/GaN field-effect transistors with monolithically integrated wheatstone bridge for temperature- and drift compensation in enzymatic biosensors

M. Eickhoff, D. Stock, S. Figge, 2018, Sensors and Actuators B: Chemical.

Axial p–n Junctions in GaN Microrods

G. Sarau, S. Christiansen, M. Heilmann, 2018, physica status solidi (b).

Strain relaxation in AlGaN under tensile plane stress

S. Einfeldt, S. Figge, D. Hommel, 2000 .

Colour and multicolour tuning of InGaN quantum dot based light-emitting diodes

S. Figge, D. Hommel, C. Tessarek, 2014 .

Highly ordered catalyst-free and mask-free GaN nanorods on r-plane sapphire

T. Voss, S. Figge, D. Hommel, 2009, Nanotechnology.

Spectro-microscopy of Si doped GaN films

J. Flege, J. Falta, L. Gregoratti, 2006 .

Wafer Bonding of GaN and ZnSSe for Optoelectronic Applications

S. Denbaars, L. McCarthy, U. Mishra, 2004 .

Defect distribution in a-plane GaN on Al2O3

B. Monemar, F. Tuomisto, S. Figge, 2007 .

Vacancy defect distribution in heteroepitaxial a-plane GaN grown by hydride vapor phase epitaxy

B. Monemar, F. Tuomisto, S. Figge, 2007 .

Optical properties of nonpolar a-plane GaN layers

S. Nakamura, J. Speck, P. Paskov, 2006 .

INCORPORATION OF INDIUM DURING MOLECULAR BEAM EPITAXY OF INGAN

P. Ryder, S. Einfeldt, S. Figge, 1998 .

Microstructure of heteroepitaxial GaN revealed by x-ray diffraction

S. Einfeldt, S. Figge, D. Hommel, 2003 .

Mosaicity of GaN Epitaxial Layers: Simulation and Experiment

S. Figge, D. Hommel, T. Böttcher, 2001 .

Mapping misorientation and crystallographic tilt in GaN layers via polychromatic microdiffraction

S. Denbaars, R. Davis, G. Ice, 2006 .

Characterization of crystallographic properties and defects via X‐ray microdiffraction in GaN (0001) layers

S. Denbaars, R. Davis, J. Speck, 2006 .

Spatially resolved distribution of dislocations and crystallographic tilts in GaN layers grown on Si(111) substrates by maskless cantilever epitaxy

J. Budai, G. Ice, S. Einfeldt, 2006 .

14 – Growth of II–VI and III-nitride quantum-dot microcavity systems

S. Figge, D. Hommel, C. Kruse, 2012 .

Microphotoluminescence studies on GaN‐based airpost pillar microcavities containing InGaN quantum wells and quantum dots

M. Seyfried, S. Figge, D. Hommel, 2011 .

Integration of InGaN quantum dots into nitride-based microcavities

S. Figge, D. Hommel, C. Tessarek, 2008 .

Characterization of n-ZnO/p-GaN Heterojunction for Optoelectronic Applications

E. Guziewicz, M. Godlewski, B. Witkowski, 2013 .

Epitaxial technologies for short wavelength optoelectronic devices

S. Figge, D. Hommel, T. Paskova, 2004 .

Polarity dependence of Mn incorporation in (Ga,Mn)N superlattices

J. Grenzer, S. Figge, D. Hommel, 2016 .

GaMnN epitaxial films with high magnetization

J. Grenzer, S. Figge, D. Hommel, 2012, 1205.3475.

Realization of a GaN Laser Diode with Wet Etched Facets

P. Ryder, M. Ilegems, C. Zellweger, 2002 .

Nitride based heterostructures with Ga- and N-polarity for sensing applications

S. Figge, D. Hommel, A. Rosenauer, 2013 .

Growth of AlN by pulsed and conventional MOVPE

S. Figge, D. Hommel, T. Aschenbrenner, 2013 .

The influence of the quantum‐confined Stark effect on InGaN/AlGaN quantum dots

S. Figge, D. Hommel, A. Rosenauer, 2017 .

Determination of the Temperature Dependent Thermal Expansion Coefficients of Bulk AlN by HRXRD

S. Figge, D. Hommel, B. Epelbaum, 2008 .

GaN based laser diodes – epitaxial growth and device fabrication

Marc Ilegems, Sven Einfeldt, Detlef Hommel, 2003 .

Pyramidal Defect Formation in View of Magnesium Segregation

P. Ryder, S. Figge, D. Hommel, 2002 .

Thermally induced stress in GaN layers with regard to film coalescence

S. Einfeldt, S. Figge, D. Hommel, 2001 .

Evidence for two Mg related acceptors in GaN.

J. Bergman, H. Amano, I. Akasaki, 2009, Physical review letters.

Wave guide optimization for homoepitaxial laser diodes

S. Figge, D. Hommel, T. Aschenbrenner, 2007 .

Homoepitaxial laser diodes emitting at 390 nm and the influence of substrate quality

S. Figge, D. Hommel, J. Dennemarck, 2007 .

Comparative Study of GaN Based Light Emitting Devices Grown on Sapphire and GaN Substrates

G. Alexe, S. Figge, D. Hommel, 2004 .

Surface oxidation of GaN(0001): Nitrogen plasma-assisted cleaning for ultrahigh vacuum applications

J. Falta, T. Schmidt, S. Figge, 2014 .

Cleaning and growth morphology of GaN and InGaN surfaces

J. Flege, J. Falta, T. Schmidt, 2011 .

Defect structure of a-plane GaN grown by hydride and metal-organic vapor phase epitaxy on r-plane sapphire

B. Monemar, S. Figge, D. Hommel, 2007 .

Interfacial structure of a -plane GaN grown on r -plane sapphire

B. Monemar, S. Figge, D. Hommel, 2007 .

Anti-diffusion barriers for gold-based metallization to GaN

A. Turos, S. Figge, D. Hommel, 2005 .

Influence of composition and well-width fluctuations on optical gain in (In, Ga)N multiple quantum wells

S. Denbaars, S. Keller, P. Michler, 2001 .

Optical properties of InGaN quantum dots in monolithic pillar microcavities

M. Seyfried, F. Jahnke, S. Figge, 2010 .

Self-Catalyzed Growth of Vertically Aligned InN Nanorods by Metal-Organic Vapor Phase Epitaxy.

K. Schwarzburg, G. Sarau, S. Christiansen, 2016, Nano letters.

High-reflectivity broadband distributed Bragg reflector lattice matched to ZnTe

S. Figge, D. Hommel, C. Kruse, 2009, 0903.5492.

Controlled Laser-Thinning of MoS2 Nanolayers and Transformation to Amorphous MoOx for 2D Monolayer Fabrication

M. Eickhoff, S. Figge, C. Tessarek, 2020 .

Electroluminescence from InGaN quantum dots in a fully monolithic GaN/AlInN cavity

S. Figge, D. Hommel, A. Rosenauer, 2011 .

GaMnN epitaxial films with high magnetization

J. Grenzer, S. Figge, D. Hommel, 2012, 1205.3475.

Assessment of phonon mode characteristics via infrared spectroscopic ellipsometry on a‐plane GaN

P. Paskov, H. Arwin, P. Fini, 2006 .

Metastability of the UV luminescence in Mg-doped GaN layers grown by MOVPE on quasi-bulk GaN templates

H. Amano, I. Akasaki, P. Paskov, 2007 .

Temperature dependence of the thermal expansion of AlN

Detlef Hommel, Boris M. Epelbaum, Stephan Figge, 2009 .

Emission properties of a-plane GaN grown by metal-organic chemical-vapor deposition

Detlef Hommel, Plamen Paskov, Tanya Paskova, 2005 .

Determination of the Fermi Level Position in Dilute Magnetic Ga$_{1-x}$Mn$_{x}$N Films

G. Czycholl, M. Stoica, D. Mourad, 2014, 1401.6791.

Single photon emission from InGaN/GaN quantum dots up to 50 K

S. Höfling, L. Worschech, A. Forchel, 2012 .

InGaN quantum dot growth in the limits of Stranski–Krastanov and spinodal decomposition

S. Figge, D. Hommel, C. Tessarek, 2011 .

Two‐step growth of InGaN quantum dots and application to light emitters

J. Falta, S. Figge, D. Hommel, 2007 .

Epitaxal growth of InGaN quantum dots grown by MOVPE: Effect of capping process on the structural and optical properties

S. Figge, D. Hommel, K. Sebald, 2005 .

On the dynamics of InGaN dot formation by RF-MBE growth

S. Einfeldt, C. Roder, S. Figge, 2004 .

Mg and Si dopant incorporation and segregation in GaN

J. Zegenhagen, J. Flege, J. Falta, 2011 .

Optical properties of vertical, tilted and in-plane GaN nanowires on different crystallographic orientations of sapphire

Silke Christiansen, Martin Heilmann, Erdmann Spiecker, 2014 .

Temperature dependence of the thermal expansion of GaN

Sven Einfeldt, Detlef Hommel, Stephan Figge, 2005 .

The role of high-temperature island coalescence in the development of stresses in GaN films

James S. Speck, Sven Einfeldt, Detlef Hommel, 2001 .

A structural investigation of highly ordered catalyst- and mask-free GaN nanorods

S. Figge, D. Hommel, A. Rosenauer, 2011, Nanotechnology.

Defect distribution in a-plane GaN on Al2O3

B. Monemar, R. Kersting, F. Tuomisto, 2007 .

Light-emitting diode based on mask- and catalyst-free grown N-polar GaN nanorods

K. Thonke, S. Figge, D. Hommel, 2011, Nanotechnology.

Epitaxial ZnO Films Grown at Low Temperature for Novel Electronic Application

E. Guziewicz, B. Witkowski, Ł. Wachnicki, 2011 .

Stress and wafer bending of a-plane GaN layers on r-plane sapphire substrates

S. Nakamura, P. Paskov, P. Fini, 2006 .

Strong phase separation of strained InxGa1−xN layers due to spinodal and binodal decomposition: Formation of stable quantum dots

Detlef Hommel, Andreas Rosenauer, M. Seyfried, 2011 .

In situ and ex situ evaluation of the film coalescence for GaN growth on GaN nucleation layers

Sven Einfeldt, Detlef Hommel, Stephan Figge, 2000 .

Electroluminescence from a single InGaN quantum dot in the green spectral region up to 150 K

S. Figge, D. Hommel, C. Tessarek, 2010, Nanotechnology.

Cathodoluminescence profiling of InGaN-based quantum well structures and laser diodes - In-plane instabilities of light emission

M. Godlewski, E. Goldys, P. Perlin, 2003 .

Surface segregation of Si and Mg dopants in MOVPE grown GaN films revealed by X‐ray photoemission spectro‐microscopy

J. Flege, J. Falta, L. Gregoratti, 2006 .

Magnesium segregation and the formation of pyramidal defects in p-GaN

P. Ryder, S. Figge, D. Hommel, 2002 .

Nucleation Window of Ga2O3 and In2O3 for Molecular Beam Epitaxy on (0001) Al2O3

M. Eickhoff, P. Vogt, S. Figge, 2023, Crystal Growth & Design.

Buffer layers for the growth of GaN on sapphire by molecular beam epitaxy

Sven Einfeldt, Detlef Hommel, Stephan Figge, 1999 .

Structural defect-related emissions in nonpolar a-plane GaN

J. Bergman, P. Paskov, B. Monemar, 2006 .

High-quality bulk a-plane GaN sliced from boules in comparison to heteroepitaxially grown thick films on r-plane sapphire

Detlef Hommel, Edward A. Preble, M. Tutor, 2006 .

Photoluminescence of a ‐plane GaN: comparison between MOCVD and HVPE grown layers

James S. Speck, Shuji Nakamura, Detlef Hommel, 2006 .

Microscopic emission properties of nonpolar α-plane GaN grown by HVPE

B. Monemar, T. Paskova, R. Kroeger, 2006, SPIE OPTO.

Diffusion length of carriers and excitons in GaN - Influence of epilayer microstructure

M. Godlewski, E. Goldys, P. Prystawko, 2004 .

Phase diagram and critical behavior of the random ferromagnet Ga1−xMnxN

Tian T Li, J. Majewski, C. Simserides, 2013, 1306.5141.

A novel approach for the growth of InGaN quantum dots

J. Falta, S. Figge, D. Hommel, 2006 .

Electroluminescence from isolated single indium gallium nitride quantum dots up to 150 K

S. Figge, D. Hommel, C. Tessarek, 2010 .

On the Impact of Microstructure on Luminescence of InGaN/GaN Multi Quantum Wells Grown by Molecular Beam Epitaxy

S. Einfeldt, S. Figge, D. Hommel, 1999 .

Improved capping layer growth towards increased stability of InGaN quantum dots

S. Figge, D. Hommel, C. Tessarek, 2009 .

Optical Properties and Modal Gain of InGaN Quantum Dot Stacks

S. Figge, D. Hommel, C. Tessarek, 2008, 0812.0301.

Influence of a low-temperature capping on the crystalline structure and morphology of InGaN quantum dot structures

J. Falta, T. Baumbach, R. Magalhães-Paniago, 2014 .

Analysis of Time-Resolved Donor-Acceptor-Pair Recombination in MBE and MOVPE Grown GaN : Mg

Sven Einfeldt, Detlef Hommel, Peter Michler, 2001 .

Correlations between Structural, Electrical and Optical Properties of GaN Layers Grown by Molecular Beam Epitaxy

P. Ryder, S. Einfeldt, S. Figge, 1999 .

Relationship between sample morphology and carrier diffusion length in GaN thin films

M. Godlewski, M. Boćkowski, E. Goldys, 2002 .

Direct MOVPE- and MBE-growth of a-plane GaN on r-plane sapphire

S. Figge, D. Hommel, C. Kruse, 2008 .

Catalyst free self‐organized grown high‐quality GaN nanorods

S. Figge, D. Hommel, A. Rosenauer, 2011 .

Photoluminescence and structural analysis of a-plane InGaN layers

S. Figge, D. Hommel, A. Rosenauer, 2008 .

Growth and characterization of nitride‐based distributed Bragg reflectors

S. Figge, D. Hommel, C. Kruse, 2011 .

Indium: A surfactant for the growth of ɛ/κ-Ga2O3 by molecular beam epitaxy

S. Figge, A. Rosenauer, M. Schowalter, 2023, APL Materials.

Micro‐analysis of light emission properties of GaN‐based laser diodes

M. Godlewski, A. Zukauskas, S. Juršėnas, 2007 .

Profiling of light emission of GaN‐based laser diodes with cathodoluminescence

M. Godlewski, K. Kazlauskas, P. Perlin, 2006 .

Light Emission Properties of GaN-Based Laser Diode Structures

M. Godlewski, P. Perlin, R. Czernecki, 2005 .

Influence of n-type doping on light emission properties of GaN layers and GaN-based quantum well structures

M. Godlewski, A. Zukauskas, S. Juršėnas, 2005 .

Determination of the Temperature Dependent Thermal Expansion Coefficients of Bulk AlN by HRXRD

S. Figge, D. Hommel, B. Epelbaum, 2008 .

Infrared spectroscopic ellipsometry for nondestructive characterization of free-carrier and crystal-structure properties of group-III-nitride semiconductor device heterostructures

Mathias Schubert, Sven Einfeldt, Detlef Hommel, 2001, SPIE Optics + Photonics.