Lucovsky

Local atomic structure in thin films of silicon nitride and silicon diimide produced by remote plasma-enhanced chemical-vapor deposition.

Tsu, Lucovsky, Mantini, 1986, Physical review. B, Condensed matter.

Chemical bonding of hydrogen and oxygen in glow-discharge-deposited thin films of a-Ge:H and a-Ge:(H,O).

Chao, Yang, Ross, 1985, Physical review. B, Condensed matter.

Effects of the nearest neighbors and the alloy matrix on SiH stretching vibrations in the amorphous SiOr:H (0

Davidson, Tsu, Lucovsky, 1989, Physical review. B, Condensed matter.

Electronic transitions at Si(111)/SiO2 and Si(111)/Si3N4 interfaces studied by optical second-harmonic spectroscopy.

Kurz, Meyer, Wolter, 1995, Physical review letters.

Ultrafast recombination and trapping in amorphous silicon.

Wang, Davidson, Kurz, 1990, Physical review. B, Condensed matter.

Theoretical studies of Si-O and Si-N bonding arrangements on vicinal Si(111) wafers.

Lucovsky, Whitten, Jing, 1994, Physical review. B, Condensed matter.

Silicon-hydrogen bond-stretching vibrations in hydrogenated amorphous silicon-nitrogen alloys.

Lucovsky, Parsons, 1990, Physical review. B, Condensed matter.