D. Marin

发表

Defects in heteroepitaxial CdHgTe/Si layers and their behavior under conditions of implanted p+-n photodiode structure formation

Yu. G. Sidorov, K. Mynbaev, N. Bazhenov, 2014 .

Formation of Ge and GeSi nanocrystals in GeOx/SiO2 multilayers

V. Volodin, D. Marin, H. Rinnert, 2013 .

Ellipsometry of GeO2 films with Ge nanoclusters: Influence of the quantum-size effect on refractive index

E. B. Gorokhov, A. Borisov, V. Volodin, 2009 .

Effect of high-power nanosecond and femtosecond laser pulses on silicon nanostructures

V. Volodin, D. Marin, S. Cherkova, 2008 .

Influence of irradiation with swift heavy ions on multilayer Si/SiO2 heterostructures

V. Volodin, A. Cherkov, D. Marin, 2013 .

The modification of Si nanocrystallites embedded in a dielectric matrix by high energy ion irradiation

I. Balberg, V. Volodin, A. Cherkov, 2009, Nanotechnology.

Applying an improved phonon confinement model to the analysis of Raman spectra of germanium nanocrystals

E. B. Gorokhov, V. Volodin, D. Marin, 2014 .

Electrophysical properties of CdxHg1–xTe (x = 0.3) films grown by molecular beam epitaxy on Si(013) substrates

M. Yakushev, D. Marin, V. S. Varavin, 2016 .

Electrical properties and photoluminescence of SiOx layers with Si nanocrystals in relation to the SiOx composition

V. Volodin, I. Antonova, D. Marin, 2006 .

Modification of photoluminescence and charge in oxide with silicon nanocrystals by high energy ion implantation

I. Antonova, D. Marin, J. Jedrzejewski, 2006, 2006 Multiconference on Electronics and Photonics.

Structure and optical properties of SiNx: H films with Si nanoclusters produced by low-frequency plasma-enhanced chemical vapor deposition

V. Volodin, D. Marin, M. Vergnat, 2009 .

Laser Assisted Formation on Nanocrystals in Plasma-Chemical Deposited SiNx Films

V. Volodin, D. Marin, A. Popov, 2005 .

Photoluminescence of GeO2 films containing germanium nanocrystals

E. B. Gorokhov, V. Volodin, D. Marin, 2003 .

Pulsed laser modification of A12O3 ceramics to controlling the surface wettability

D. Marin, A. Gavrikov, V. Petrovskiy, 2021, Journal of Physics: Conference Series.

Anomalous temperature dependence of photoluminescence in GeOx films and GeOx/SiO2 nano-heterostructures

V. Volodin, D. Marin, H. Rinnert, 2012, JETP Letters : Journal of Experimental And Theoretical Physics Letters.

Luminescence in GeOx films containing germanium nanoclusters

E. B. Gorokhov, V. Volodin, D. Marin, 2016, Nanotechnologies in Russia.

Effect of pressure annealing on formation of light‐emitting Si nanocrystals in Si rich SiO2

D. Marin, A. Misiuk, S. Cherkova, 2009 .

Light-emitting Si nanostructures formed in silica layers by irradiation with swift heavy ions

A. Cherkov, D. Marin, S. Cherkova, 2010 .

Effect of the ion-energy loss rate on defect formation during implantation in silicon nanocrystals

V. Volodin, A. Cherkov, D. Marin, 2008 .

Structure, phase composition, and optical properties of silicon nanopowders

K. N. Pankov, S. Bardakhanov, A. Korchagin, 2008 .

Structure and optical properties of silicon nanopowders

K. N. Pankov, S. Bardakhanov, A. Korchagin, 2008 .

Nanocrystalline silicon films formed under the impact of pulsed excimer laser radiation on polyimide substrates

V. Volodin, D. Marin, A. Popov, 2003 .

Electrical properties of the Hg0.7Cd0.3Te films grown by MBE method on Si(0 1 3) substrates

M. Yakushev, D. Marin, V. S. Varavin, 2018, Infrared Physics & Technology.

Light-emitting Si nanostructures formed by swift heavy ions in stoichiometric SiO2 layers

V. Volodin, D. Marin, S. Cherkova, 2012 .

Photodiodes based on p-on-n junctions formed in MBE-grown n-type MCT absorber layers for the spectral region 8 to 11 μm

V. G. Remesnik, Yu. G. Sidorov, I. Sabinina, 2020 .

High Volume Synthesis of Silicon Nanopowder by Electron Beam Ablation of Silicon Ingot at Atmospheric Pressure

A. Nomoev, S. Bardakhanov, A. Korchagin, 2008 .

Optical probing of extended defects in CdTe virtual substrates via isolated emitters produced by weakly perturbed fragments of partial dislocations

V. S. Bagaev, V. Krivobok, M. Yakushev, 2019 .

Parametric Model of the Optical Constant Spectra of Hg1 – xCdxTe and Determination of the Compound Composition

V. G. Remesnik, D. Marin, I. Azarov, 2020, Optics and Spectroscopy.

Phase separation as a basis for the formation of light-emitting silicon nanoclusters in SiOx films irradiated with swift heavy ions

V. Volodin, A. Cherkov, D. Marin, 2014 .

Oxidation kinetics of a silicon surface in a plasma of oxygen with inert gases

V. Volodin, D. Marin, G. N. Kamaev, 2011 .

SiOx layer formation during plasma sputtering of Si and SiO2 targets

V. Volodin, D. Marin, E. Savir, 2008 .

Variation in optical-absorption edge in SiNx layers with silicon clusters

V. Volodin, D. Marin, M. Efremov, 2008 .

Structure and photoluminescence study of type-II GaAs quantum wires and dots grown on nano-faceted (3 1 1)A surface

I. P. Soshnikov, D. Gerthsen, N. Ledentsov, 2004 .

Effect of quantum confinement on optical properties of Ge nanocrystals in GeO2 films

E. B. Gorokhov, A. Borisov, V. Volodin, 2005 .

Coulomb blockade of the conductivity of SiOx films due to one-electron charging of a silicon quantum dot in a chain of electronic states

G. N. Kamaev, V. Volodin, A. Kretinin, 2005 .

Phase separation as a basis for the formation of light-emitting silicon nanoclusters in SiOx films irradiated with swift heavy ions

V. Volodin, A. Cherkov, D. Marin, 2014, Optoelectronics, Instrumentation and Data Processing.

Formation of light-emitting nanostructures in layers of stoichiometric SiO2 irradiated with swift heavy ions

V. Volodin, D. Marin, S. Cherkova, 2011 .

The effect of composition on the formation of light-emitting Si nanostructures in SiOx layers on irradiation with swift heavy ions

A. Cherkov, D. Marin, S. Cherkova, 2011 .

Light-emitting Si nanostructures formed in SiO2 on irradiation with swift heavy ions

A. Cherkov, D. Marin, S. Cherkova, 2010 .

Modification of Silicon Nanocrystals Embedded in an Oxide by High Energy Ion Implantation

I. Antonova, D. Marin, J. Jedrzejewski, 2007 .

Ellipsometric thermometry in molecular beam epitaxy of mercury cadmium telluride

M. Yakushev, D. Marin, I. Azarov, 2021 .

Electrical and microscopic characterization of p+-type layers formed in HgCdTe by arsenic implantation

I. Izhnin, A. Voitsekhovskii, S. Dzyadukh, 2020, Semiconductor Science and Technology.

Study of MIS structures based on CdHgTe and HfO2 applied by PEALD

O. Tereshchenko, I. Sabinina, D. Marin, 2022, Applied Physics Letters.

The Effect of the Growth Temperature on the Passivating Properties of the Al2O3 Films Formed by Atomic Layer Deposition on the CdHgTe Surface

Yu. G. Sidorov, I. Sabinina, M. Yakushev, 2020, Technical Physics Letters.

Investigation of the Effect of Thermal Annealing on the Electrical Properties of the Near-Surface Layer of MBE n-HgCdTe Using MIS Techniques

A. Voitsekhovskii, S. Dzyadukh, M. Yakushev, 2020, Journal of Electronic Materials.

Influence of As+ Ion Implantation on Properties of MBE HgCdTe Near-Surface Layer Characterized by Metal–Insulator–Semiconductor Techniques

A. Voitsekhovskii, S. Dzyadukh, M. Yakushev, 2021, Journal of Electronic Materials.

Nano-size defect layers in arsenic-implanted and annealed HgCdTe epitaxial films studied with transmission electron microscopy

I. Izhnin, O. I. Fitsych, A. Voitsekhovskii, 2020, Applied Nanoscience.

Nano-size defects in arsenic-implanted HgCdTe films: a HRTEM study

I. Izhnin, O. I. Fitsych, A. Voitsekhovskii, 2019, Applied Nanoscience.

Electrical profiling of arsenic-implanted HgCdTe films performed with discrete mobility spectrum analysis

V. G. Remesnik, I. Izhnin, O. I. Fitsych, 2019, Semiconductor Science and Technology.

Photoluminescence of Molecular Beam Epitaxy-Grown Mercury Cadmium Telluride: Comparison of HgCdTe/GaAs and HgCdTe/Si Technologies

K. Mynbaev, N. Bazhenov, M. Yakushev, 2018, Journal of Electronic Materials.

Wet Chemical Methods of HgCdTe Surface Treatment

O. Tereshchenko, D. Marin, G. Sidorov, 2023, Journal of Structural Chemistry.

Modification of germanium nanoclusters in GeOx films during isochronous furnace and pulse laser annealing

E. B. Gorokhov, B. Chichkov, V. Volodin, 2010 .

Ge Nanoclusters in GeO2: Synthesis and Optical Properties

E. B. Gorokhov, V. Volodin, A. Cherkov, 2005 .

In situ spectroscopic ellipsometry for temperature control in molecular beam epitaxy of HgCdTe

M. Yakushev, D. Marin, I. Azarov, 2022, Journal of Crystal Growth.

Ellipsometric In Situ Methods of Temperature Control in the Technology of Growing MBE MCT Layers

D. Marin, I. Azarov, S. V. Rykhlitskiĭ, 2021, Optoelectronics, Instrumentation and Data Processing.

Investigation of the Temperature Dependence of the Spectra of Optical Constants of Hg1 – xCdхTe Films Grown Using Molecular Beam Epitaxy

M. Yakushev, D. Marin, S. V. Rykhlitskiĭ, 2021 .

Ellipsometric Method for Measuring the CdTe Buffer-Layer Temperature in the Molecular-Beam Epitaxy of CdHgTe

M. Yakushev, D. Marin, I. Azarov, 2019, Semiconductors.

A Megapixel Matrix Photodetector of the Middle Infrared Range

V. G. Remesnik, Yu. G. Sidorov, A. V. Glukhov, 2019, Journal of Communications Technology and Electronics.

Quasi-direct optical transitions in Ge nanocrystals embedded in GeO2 matrix

E. B. Gorokhov, V. Volodin, P. Miska, 2009 .

The reverse current temperature dependences of SWIR CdHgTe "p-on-n" and "n-on-p" junctions

Yu. G. Sidorov, I. Sabinina, M. Yakushev, 2015 .