S. Stoffels

发表

Influence of Field-Plate Configuration on Power Dissipation and Temperature Profiles in AlGaN/GaN on Silicon HEMTs

M. Baelmans, I. De Wolf, H. Oprins, 2015, IEEE Transactions on Electron Devices.

Modeling of gate capacitance of GaN-based trench-gate vertical metal-oxide-semiconductor devices

S. Decoutere, M. Meneghini, G. Meneghesso, 2020, Applied Physics Express.

Evidence of Time-Dependent Vertical Breakdown in GaN-on-Si HEMTs

S. Decoutere, M. Meneghini, G. Meneghesso, 2017, IEEE Transactions on Electron Devices.

Degradation of GaN-HEMTs with p-GaN Gate: Dependence on temperature and on geometry

S. Decoutere, M. Meneghini, G. Meneghesso, 2017, 2017 IEEE International Reliability Physics Symposium (IRPS).

Analysis of the Gate Capacitance–Voltage Characteristics in p-GaN/AlGaN/GaN Heterostructures

S. Decoutere, N. Ronchi, Tian-Li Wu, 2017, IEEE Electron Device Letters.

Negative Bias-Induced Threshold Voltage Instability in GaN-on-Si Power HEMTs

S. Decoutere, M. Meneghini, G. Meneghesso, 2016, IEEE Electron Device Letters.

Gate Reliability of p-GaN HEMT With Gate Metal Retraction

S. Decoutere, A. Tallarico, C. Fiegna, 2019, IEEE Transactions on Electron Devices.

Kinetics of Buffer-Related RON-Increase in GaN-on-Silicon MIS-HEMTs

S. Decoutere, M. Meneghini, G. Meneghesso, 2014, IEEE Electron Device Letters.

An industry-ready 200 mm p-GaN E-mode GaN-on-Si power technology

S. Decoutere, M. Tack, P. Moens, 2018, 2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD).

Fast and Distributed Thermal Model for Thermal Modeling of GaN Power Devices

S. Decoutere, M. Baelmans, I. De Wolf, 2018, IEEE Transactions on Components, Packaging and Manufacturing Technology.

Trapping in GaN-based metal-insulator-semiconductor transistors: Role of high drain bias and hot electrons

Gaudenzio Meneghesso, Denis Marcon, Enrico Zanoni, 2014 .

Reliability and parasitic issues in GaN-based power HEMTs: a review

Gaudenzio Meneghesso, Enrico Zanoni, Stefaan Decoutere, 2016 .

Positive bias temperature instability evaluation in fully recessed gate GaN MIS-FETs

Guido Groeseneken, Jacopo Franco, Denis Marcon, 2016, 2016 IEEE International Reliability Physics Symposium (IRPS).

Toward Understanding Positive Bias Temperature Instability in Fully Recessed-Gate GaN MISFETs

Guido Groeseneken, Jacopo Franco, Denis Marcon, 2016, IEEE Transactions on Electron Devices.

AlGaN/GaN field effect transistors for power electronics—Effect of finite GaN layer thickness on thermal characteristics

M. Kuball, S. Stoffels, D. Marcon, 2013 .

Impact of Substrate Resistivity on the Vertical Leakage, Breakdown, and Trapping in GaN-on-Si E-Mode HEMTs

Gaudenzio Meneghesso, Niels Posthuma, Enrico Zanoni, 2018, IEEE Transactions on Electron Devices.

Modeling of the Vertical Leakage Current in AlN/Si Heterojunctions for GaN Power Applications

S. Decoutere, M. Meneghini, G. Meneghesso, 2020, IEEE Transactions on Electron Devices.

The Impact of Ti/Al Contacts on AlGaN/GaN HEMT Vertical Leakage and Breakdown

S. Decoutere, M. Uren, Martin Kuball, 2018, IEEE Electron Device Letters.

Evaluation of novel carrier substrates for high reliability and integrated GaN devices in a 200 mm complementary metal-oxide semiconductor compatible process

S. Decoutere, D. Wellekens, M. Meneghini, 2018, MRS Communications.

Physical loss mechanisms for resonant acoustical waves in boron doped poly-SiGe deposited with hydrogen dilution

R. Puers, H. Tilmans, E. Autizi, 2010 .

Investigation of constant voltage off-state stress on Au-free AlGaN/GaN Schottky barrier diodes

S. Decoutere, G. Groeseneken, N. Ronchi, 2015 .

CMOS Process-Compatible High-Power Low-Leakage AlGaN/GaN MISHEMT on Silicon

S. Decoutere, M. Van Hove, D. Wellekens, 2012, IEEE Electron Device Letters.

Buffer Vertical Leakage Mechanism and Reliability of 200-mm GaN-on-SOI

S. Decoutere, G. Groeseneken, Weiming Guo, 2019, IEEE Transactions on Electron Devices.

GaN-on-Silicon CMOS-Compatible Process

S. Stoffels, D. Marcon, 2017 .

Device breakdown optimization of AhOs/GaN MISFETs

S. Decoutere, B. de Jaeger, D. Wellekens, 2016, 2016 IEEE International Reliability Physics Symposium (IRPS).

Statistical Analysis of the Impact of Anode Recess on the Electrical Characteristics of AlGaN/GaN Schottky Diodes With Gated Edge Termination

S. Decoutere, A. Tallarico, G. Groeseneken, 2016, IEEE Transactions on Electron Devices.

Identification of Electrically Stressed Regions in AlGaN/GaN-on-Si Schottky Barrier Diode Using EBIC Technique

S. Decoutere, A. Chvála, S. Stoffels, 2021, IEEE Transactions on Electron Devices.

Leakage and trapping characteristics in Au‐free AlGaN/GaN Schottky barrier diodes fabricated on C‐doped buffer layers

S. Decoutere, G. Groeseneken, N. Ronchi, 2016 .

ON-State Degradation in AlGaN/GaN-on-Silicon Schottky Barrier Diodes: Investigation of the Geometry Dependence

S. Decoutere, A. Tallarico, C. Fiegna, 2016, IEEE Transactions on Electron Devices.

On the Identification of Buffer Trapping for Bias-Dependent Dynamic $R_{\mathrm{\scriptscriptstyle ON}}$ of AlGaN/GaN Schottky Barrier Diode With AlGaN:C Back Barrier

S. Decoutere, G. Groeseneken, S. Stoffels, 2016, IEEE Electron Device Letters.

Reliability of Au-Free AlGaN/GaN-on-Silicon Schottky Barrier Diodes Under ON-State Stress

S. Decoutere, A. Tallarico, C. Fiegna, 2016, IEEE Transactions on Electron Devices.

Experimental Benchmarking of Electrical Methods and $\mu $ -Raman Spectroscopy for Channel Temperature Detection in AlGaN/GaN HEMTs

S. Decoutere, M. Baelmans, I. De Wolf, 2016, IEEE Transactions on Electron Devices.

GAN-on-Si HEMTs for 50V RF applications

S. Decoutere, F. Vanaverbeke, R. Venegas, 2012, 2012 7th European Microwave Integrated Circuit Conference.

Analysis of threshold voltage instabilities in semi-vertical GaN-on-Si FETs

S. Decoutere, M. Meneghini, G. Meneghesso, 2020, Applied Physics Express.

Understanding the degradation sources under ON-state stress in AlGaN/GaN-on-Si SBD: Investigation of the anode-cathode spacing length dependence

S. Decoutere, A. Tallarico, C. Fiegna, 2016, 2016 IEEE International Reliability Physics Symposium (IRPS).

CMOS Process Leakage AlGaN / GaN MISHEMT on Silicon

M. V. Hove, D. Wellekens, S. Stoffels, 2012 .

Trading Off between Threshold Voltage and Subthreshold Slope in AlGaN/GaN HEMTs with a p-GaN Gate

S. Decoutere, D. Wellekens, N. Posthuma, 2019, 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD).

Fabrication and Performance of Au-Free AlGaN/GaN-on-Silicon Power Devices With ${\rm Al}_{2}{\rm O}_{3}$ and ${\rm Si}_{3}{\rm N}_{4}/{\rm Al}_{2}{\rm O}_{3}$ Gate Dielectrics

Dirk Wellekens, Marleen Van Hove, Stefaan Decoutere, 2013, IEEE Transactions on Electron Devices.

Trapping and Reliability Assessment in D-Mode GaN-Based MIS-HEMTs for Power Applications

Gaudenzio Meneghesso, Denis Marcon, Enrico Zanoni, 2014, IEEE transactions on power electronics.

Trapping mechanisms in GaN‐based MIS‐HEMTs grown on silicon substrate

Gaudenzio Meneghesso, Denis Marcon, Enrico Zanoni, 2015 .

Analysis of slow de-trapping phenomena after a positive gate bias on AlGaN/GaN MIS-HEMTs with in-situ Si3N4/Al2O3 bilayer gate dielectrics

Guido Groeseneken, Denis Marcon, Stefaan Decoutere, 2015 .

Breakdown investigation in GaN-based MIS-HEMT devices

Fabio Alessio Marino, Gaudenzio Meneghesso, Denis Marcon, 2014, 2014 44th European Solid State Device Research Conference (ESSDERC).

Reliability Analysis of Permanent Degradations on AlGaN/GaN HEMTs

Gaudenzio Meneghesso, Denis Marcon, Enrico Zanoni, 2013, IEEE Transactions on Electron Devices.

Reliability of AlGaN/GaN HEMTs: Permanent leakage current increase and output current drop

Denis Marcon, Stefaan Decoutere, Xuanwu Kang, 2012, Proceedings of the 20th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA).

Gate Stability of GaN-Based HEMTs with P-Type Gate

Gaudenzio Meneghesso, Niels Posthuma, Denis Marcon, 2016 .

Stability evaluation of Au-free Ohmic contacts on AlGaN/GaN HEMTs under a constant current stress

Guido Groeseneken, Denis Marcon, Stefaan Decoutere, 2014, Microelectron. Reliab..

Time dependent dielectric breakdown (TDDB) evaluation of PE-ALD SiN gate dielectrics on AlGaN/GaN recessed gate D-mode MIS-HEMTs and E-mode MIS-FETs

Guido Groeseneken, Denis Marcon, Stefaan Decoutere, 2015, 2015 IEEE International Reliability Physics Symposium.

The physical mechanism of dispersion caused by AlGaN/GaN buffers on Si and optimization for low dispersion

S. Decoutere, M. Van Hove, S. Stoffels, 2015, 2015 IEEE International Electron Devices Meeting (IEDM).

Perimeter Driven Transport in the p-GaN Gate as a Limiting Factor for Gate Reliability

Enrico Sangiorgi, G. Meneghesso, M. Meneghini, 2019, 2019 IEEE International Reliability Physics Symposium (IRPS).

Threshold Voltage Instability in GaN HEMTs With p-Type Gate: Mg Doping Compensation

Enrico Sangiorgi, Niels Posthuma, Claudio Fiegna, 2019, IEEE Electron Device Letters.

PBTI in GaN-HEMTs With p-Type Gate: Role of the Aluminum Content on $\Delta V_{\mathrm {TH}}$ and Underlying Degradation Mechanisms

Enrico Sangiorgi, Paolo Magnone, Niels Posthuma, 2018, IEEE Transactions on Electron Devices.

Field- and current-driven degradation of GaN-based power HEMTs with p-GaN gate: Dependence on Mg-doping level

Gaudenzio Meneghesso, Stefaan Decoutere, Enrico Zanoni, 2017, Microelectron. Reliab..

Failure mode for p-GaN gates under forward gate stress with varying Mg concentration

S. Decoutere, C. Fiegna, B. Bakeroot, 2017, 2017 IEEE International Reliability Physics Symposium (IRPS).

Investigation of the p-GaN Gate Breakdown in Forward-Biased GaN-Based Power HEMTs

Enrico Sangiorgi, Paolo Magnone, Niels Posthuma, 2017, IEEE Electron Device Letters.

Study of the stability of e-mode GaN HEMTs with p-GaN gate based on combined DC and optical analysis

Gaudenzio Meneghesso, Denis Marcon, Enrico Zanoni, 2016, Microelectron. Reliab..

Forward Bias Gate Breakdown Mechanism in Enhancement-Mode p-GaN Gate AlGaN/GaN High-Electron Mobility Transistors

Guido Groeseneken, Niels Posthuma, Denis Marcon, 2015, IEEE Electron Device Letters.

FULL MESH WARPING TECHNIQUES

Steve Stoffels, S. Stoffels, 2000 .

Optimization of the source field-plate design for low dynamic RDS-ON dispersion of AlGaN/GaN MIS-HEMTs

S. Decoutere, N. Ronchi, S. Stoffels, 2016, 2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS).

Smart Power Devices Nanotechnology

Gaudenzio Meneghesso, Peter Moens, Mikael Östling, 2017 .

Sub-nanosecond magnetoresistance measurements of switching transients

L. Lagae, S. Gillijns, J. Das, 2002 .

Analytical Model for the Threshold Voltage of ${p}$ -(Al)GaN High-Electron-Mobility Transistors

Niels Posthuma, Stefaan Decoutere, Benoit Bakeroot, 2018, IEEE Transactions on Electron Devices.

Analysis of multifinger power HEMTs supported by effective 3-D device electrothermal simulation

Alexander Satka, Juraj Marek, Ales Chvála, 2017, Microelectron. Reliab..

Direct comparison of GaN-based e-mode architectures (recessed MISHEMT and p-GaN HEMTs) processed on 200mm GaN-on-Si with Au-free technology

Denis Marcon, Marleen Van Hove, Brice De Jaeger, 2015, Photonics West - Optoelectronic Materials and Devices.

Performance Optimization of Au-Free Lateral AlGaN/GaN Schottky Barrier Diode With Gated Edge Termination on 200-mm Silicon Substrate

Guido Groeseneken, Marleen Van Hove, Stefaan Decoutere, 2016, IEEE Transactions on Electron Devices.

Impact of the substrate and buffer design on the performance of GaN on Si power HEMTs

Gaudenzio Meneghesso, Enrico Zanoni, X. Li, 2018, Microelectron. Reliab..

Au-free , High-Breakdown AlGaN / GaN MISHEMTs with Low Leakage , High Yield and Robust TDDB Characteristics

S. Decoutere, M. V. Hove, D. Wellekens, 2011 .

Correlation of interface states/border traps and threshold voltage shift on AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors

Guido Groeseneken, Jacopo Franco, Denis Marcon, 2015 .

Time-Dependent Breakdown Mechanisms and Reliability Improvement in Edge Terminated AlGaN/GaN Schottky Diodes Under HTRB Tests

Guido Groeseneken, Ben Kaczer, Denis Marcon, 2017, IEEE Electron Device Letters.

On the origin of the two-dimensional electron gas at AlGaN/GaN heterojunctions and its influence on recessed-gate metal-insulator-semiconductor high electron mobility transistors

Stefaan Decoutere, Benoit Bakeroot, Steve Stoffels, 2014 .

GaN-on-SOI: Monolithically Integrated All-GaN ICs for Power Conversion

S. Decoutere, D. Wellekens, B. Bakeroot, 2019, 2019 IEEE International Electron Devices Meeting (IEDM).

Trapping and reliability issues in GaN-based MIS HEMTs with partially recessed gate

Gaudenzio Meneghesso, Denis Marcon, Enrico Zanoni, 2016, Microelectron. Reliab..

Determination of the Self-Compensation Ratio of Carbon in AlGaN for HEMTs

S. Decoutere, M. Uren, Martin Kuball, 2018, IEEE Transactions on Electron Devices.

Leakage-current reduction and improved on-state performance of Au-free AlGaN/GaN-on-Si Schottky diode by embedding the edge terminations in the anode region

Guido Groeseneken, Stefaan Decoutere, Brice De Jaeger, 2014 .

The impact of the gate dielectric quality in developing Au-free D-mode and E-mode recessed gate AlGaN/GaN transistors on a 200mm Si substrate

Guido Groeseneken, Denis Marcon, Marleen Van Hove, 2015, 2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD).

Suppression of the Backgating Effect of Enhancement-Mode p-GaN HEMTs on 200-mm GaN-on-SOI for Monolithic Integration

Guido Groeseneken, Marleen Van Hove, Stefaan Decoutere, 2018, IEEE Electron Device Letters.

New fast distributed thermal model for analysis of GaN based power devices

Martine Baelmans, Ingrid De Wolf, Herman Oprins, 2016, 2016 46th European Solid-State Device Research Conference (ESSDERC).

Power GaN HEMT degradation: from time-dependent breakdown to hot-electron effects

T. Detzel, S. Decoutere, M. Meneghini, 2018, 2018 IEEE International Electron Devices Meeting (IEDM).

Current transient spectroscopy for trapping analysis on Au-free AlGaN/GaN Schottky barrier diode

Guido Groeseneken, Stefaan Decoutere, Benoit Bakeroot, 2015 .

Gate architecture design for enhancement mode p-GaN gate HEMTs for 200 and 650V applications

S. Decoutere, S. Stoffels, S. You, 2018, 2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD).

Evidence of Hot-Electron Degradation in GaN-Based MIS-HEMTs Submitted to High Temperature Constant Source Current Stress

Gaudenzio Meneghesso, Enrico Zanoni, Marleen Van Hove, 2016, IEEE Electron Device Letters.

Electrothermal analysis of power multifinger HEMTs supported by advanced 3-D device simulation

Juraj Marek, Daniel Donoval, Stefaan Decoutere, 2017, 2017 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD).

Analysis of off-state leakage mechanisms in GaN-based MIS-HEMTs: Experimental data and numerical simulation

S. Decoutere, M. V. Hove, G. Verzellesi, 2015 .

Distributed electro-thermal model based on fast and scalable algorithm for GaN power devices and circuit simulations

Martine Baelmans, Ingrid De Wolf, Stefaan Decoutere, 2017, 2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD).