H. Cao

发表

A two-dimensional model of the deformation of photoresist structures using elastoplastic polymer properties

P. Nealey, J. Pablo, M. P. Stoykovich, 2004 .

Sub-50 nm feature sizes using positive tone molecular glass resists for EUV lithography

R. Ayothi, C. Ober, N. Felix, 2006 .

Impact of trench width roughness on the graphoepitaxial assembly of block copolymers

P. Nealey, H. Cao, Adam M. Welander, 2008 .

Nanolithographic Polymer Structures: Mechanical Properties

P. Nealey, M. P. Stoykovich, K. Yoshimoto, 2003 .

Line edge roughness of a latent image in post-optical lithography.

S. Tagawa, T. Kozawa, H. Cao, 2006, Nanotechnology.

Simulation of amine concentration dependence on line edge roughness after development in electron beam lithography

S. Tagawa, T. Kozawa, M. Leeson, 2008 .

Fundamentals of the reaction-diffusion process in model EUV photoresists

Wen-li Wu, Vivek M. Prabhu, Bryan D. Vogt, 2006, SPIE Advanced Lithography.

Absorbance measurement of polymers at extreme ultraviolet wavelength: Correlation between experimental and theoretical calculations

Eric M. Gullikson, Manish Chandhok, Young-Je Kwark, 2006 .

Diazonaphthoquinone Molecular Glass Photoresists: Patterning without Chemical Amplification

Ramakrishnan Ayothi, Heidi B. Cao, Daniel Bratton, 2007 .

Study of the Structure−Properties Relationship of Phenolic Molecular Glass Resists for Next Generation Photolithography

Nelson Felix, Xavier Andre, Heidi B. Cao, 2008 .

Comparison of resist collapse properties for deep ultraviolet and 193 nm resist platforms

Wolf-Dieter Domke, Heidi B. Cao, Paul F. Nealey, 2000 .

Arylonium photoacid generators containing environmentally compatible aryloxyperfluoroalkanesulfonate groups

Wang Yueh, Ramakrishnan Ayothi, Heidi B. Cao, 2007 .

Quantification of EUV resist outgassing

Wang Yueh, Heidi B. Cao, Vani Thirumala, 2005, SPIE Advanced Lithography.

Inorganic polymer resists for EUVL

Christopher K. Ober, Heidi B. Cao, Young-Je Kwark, 2005, SPIE Advanced Lithography.

Pattern collapse in high-aspect-ratio DUV and 193-nm resists

Wolf-Dieter Domke, Georgia K. Rich, Heidi B. Cao, 2000, Advanced Lithography.

Exposure dose dependence on line edge roughness of a latent image in electron beam/extreme ultraviolet lithographies studied by Monte Carlo technique

Takahiro Kozawa, Seiichi Tagawa, Heidi B. Cao, 2007 .

Collapse behavior of single layer 193- and 157-nm resists: use of surfactants in the rinse to realize the sub-130-nm nodes

Stefan Hien, Georgia K. Rich, Gilbert Molina, 2002, SPIE Advanced Lithography.

Correlation between proton dynamics and line edge roughness in chemically amplified resist for post-optical lithography

Takahiro Kozawa, Seiichi Tagawa, Heidi B. Cao, 2006 .