T. Mohacsy

Low Pressure Detection by Depletion Channel MOS Transistors

I. Bársony, T. Mohacsy, M. Ádám, 1999, 29th European Solid-State Device Research Conference.

CMOS integrated tactile sensor array by porous Si bulk micromachining

I. Bársony, T. Mohacsy, M. Ádám, 2008 .

Characterization of ITO/porous silicon LED structures

I. Bársony, P. Varga, T. Mohacsy, 1998 .

Modified C-t technique for determining the generation lifetime profile in MeV He+ implanted silicon

T. Mohacsy, M. Ádám, J. Gyulai, 1998 .

Electrical behaviour of Al/SiO2/Si structures with SiC nanocrystals

György Vida, T. Mohacsy, Z. Horváth, 2004 .

High efficiency silicon PV cells with surface treatment by anodic etching

T. Lohner, M. Fried, I. Bársony, 1995 .

The effect of InAs quantum layer and quantum dots on the electrical characteristics of GaAs structures

E. Gombia, P. Frigeri, S. Franchi, 2000 .

Measuring the generation lifetime profile modified by MeV H+ ion implantation in silicon

T. Mohacsy, M. Ádám, J. Gyulai, 1999 .

Low-frequency noise in porous Si LED

Bela Szentpali, Peter Gottwald, Tibor Mohacsy, 2003, SPIE International Symposium on Fluctuations and Noise.