L. Lescouzères

Optimization of an integrated SnO2 gas sensor using a FEM simulator

A. Gué, E. Scheid, S. Astie, 1998 .

Influence of the mechanical conditions on the electrical and structural properties of the interface between directly bonded silicon wafers

A. Claverie, M. Benamara, G. Sarrabayrouse, 1994, Proceedings of the 6th International Symposium on Power Semiconductor Devices and Ics.

ATOMIC STRUCTURE OF THE INTERFACES BETWEEN SILICON DIRECTLY BONDED WAFERS

A. Claverie, M. Benamara, G. Sarrabayrouse, 1995 .

Direct Wafer Bonding of Preamorphized Silicon Wafers.

A. Claverie, M. Benamara, G. Sarrabayrouse, 1995 .

Structural and electrical investigations of silicon wafer bonding interfaces

A. Claverie, M. Benamara, G. Sarrabayrouse, 1996 .

Defect compensation at the interface between directly bonded silicon wafers

G. Sarrabayrouse, L. Lescouzères, A. Peyre-Lavigne, 1998 .

A Novel Mechanism for the Synthesis of Tin /Tin Oxide Nanoparticles of Low Size Dispersion and of Nanostructured SnO2 for the Sensitive Layers of Gas Sensors

L. Lescouzères, B. Chaudret, P. Fau, 1999 .