M. David

发表

Influence of the pre-treatment anneal on Co-germanide Schottky contacts

E. Simoen, C. Claeys, J. Barbot, 2008 .

Co-Germanide Schottky Contacts on Ge

K. Opsomer, E. Simoen, C. Claeys, 2007 .

Helium implanted gallium nitride evidence of gas-filled rod-shaped cavity formation along the c-axis

J. Barbot, L. Pizzagalli, M. David, 2008 .

Gate Bias Effect on the 60-MeV Proton Irradiation Response of 65-nm CMOS nMOSFETs

M. Jurczak, E. Simoen, C. Claeys, 2006, IEEE Transactions on Electron Devices.

Physical properties of Co/n-Ge Schottky contacts

J. Barbot, L. Lajaunie, M. David, 2011, 1306.0459.

Surface stress calculations for nanoparticles and cavities in aluminum, silicon, and iron: influence of pressure and validity of the Young-Laplace equation

L. Pizzagalli, M. David, 2021, Materials Theory.

Displacement field analysis around hydrogen implantation induced platelets (HIPs) in semi-conductors

J. Barbot, L. Pizzagalli, M. David, 2008 .

Comparison of Defects Created by Plasma-Based Ion Implantation and Conventional Implantation of Hydrogen in Germanium

E. Simoen, C. Claeys, M. Beaufort, 2007 .

Gentle quantitative measurement of helium density in nanobubbles in silicon by spectrum imaging.

D. Alexander, C. Hébert, L. Pizzagalli, 2015, Micron.

On the Effect of Lead on Irradiation Induced Defects in Silicon

E. Simoen, C. Claeys, J. Barbot, 2005 .

Ion Implantation Enhanced Exfoliation Efficiency of V2AlC Single Crystals: Implications for Large V2CTz Nanosheet Production

T. Ouisse, S. Hurand, U. Wiedwald, 2022, ACS Applied Nano Materials.

Electronic Structure Sensitivity to Surface Disorder and Nanometer-Scale Impurity of 2D Titanium Carbide MXene Sheets as Revealed by Electron Energy-Loss Spectroscopy

M. Bugnet, A. Habrioux, M. David, 2020, The Journal of Physical Chemistry C.

Trapping of helium in nano-bubbles in euxenite: Positive identification and implications

M. David, B. Bingen, L. Datas, 2016 .

An IR-reflectivity and X-ray diffraction study of high energy He-ion implantation-induced damage in 4H–SiC

Yves Tessier, C. Blanchard, J. F. Barbot, 2002 .

Ion Implantation as an Approach for Structural Modifications and Functionalization of Ti3C2Tx MXenes.

D. Lizzit, S. Hurand, A. Liedl, 2021, ACS nano.

Evolution of the properties of helium nanobubbles during in situ annealing probed by spectrum imaging in the transmission electron microscope

C. Hébert, J. Dérès, L. Pizzagalli, 2018 .

Quantitative HRTEM investigation of nanoplatelets

L. Pizzagalli, M. David, F. Pailloux, 2010 .

Lithium implantation at low temperature in silicon for sharp buried amorphous layer formation and defect engineering

P. Fichtner, M. Beaufort, J. Barbot, 2013 .

Kinetic evolution of blistering in hydrogen-implanted silicon

M. David, J. Colin, J. Labanowski, 2013 .

Helium implantation into 4H‐SiC

D. Eyidi, M. Beaufort, J. Barbot, 2009 .

Atomistic simulations of a helium bubble in silicon carbide

L. Pizzagalli, M. David, 2020 .

Properties of helium bubbles in covalent systems at the nanoscale: A combined numerical and experimental study

D. Alexander, C. Hébert, J. Dérès, 2017 .

Influence of helium on the nucleation and growth of bubbles in silicon: a multiscale modelling study

J. Dérès, L. Pizzagalli, M. David, 2019, Journal of Physics D: Applied Physics.

About extended defect formation in helium-implanted germanium

M. Beaufort, J. Barbot, M. David, 2012 .

Defects Created by Multi-Energy He Implantation of Silicon at High Temperatures

M. Beaufort, J. Barbot, M. David, 2003 .

Radiation damage in He implanted silicon at high temperature using multi-energies

M. Beaufort, J. Barbot, C. Blanchard, 2002 .

Density functional theory calculations of helium clustering in mono‐, di‐, and hexa‐vacancy in silicon

J. Dérès, L. Pizzagalli, M. David, 2017 .

Investigation of helium interstitials aggregation in silicon: Why bubbles formation by a self-trapping mechanism does not work

L. Pizzagalli, M. David, A. Charaf-Eddin, 2015 .

Molecular dynamics simulation of the initial stages of He bubbles formation in silicon

L. Pizzagalli, M. David, M. Bertolus, 2013 .

On the effects of implantation temperature in helium implanted silicon

M. Beaufort, J. Barbot, M. David, 2002 .

In situ controlled modification of the helium density in single helium-filled nanobubbles

G. Botton, M. Couillard, L. Pizzagalli, 2014 .

In situ probing of helium desorption from individual nanobubbles under electron irradiation

L. Pizzagalli, M. David, F. Pailloux, 2011 .

Helium implantation in silicon: the effects of implantation temperature

A. V. Fedorov, M. Beaufort, J. Barbot, 2003 .

Stability of defects created by high fluence helium implantation in silicon

M. Beaufort, J. Barbot, M. David, 2004 .

Effect of implant temperature on defects created using high fluence of helium in silicon

M. Beaufort, J. Barbot, M. David, 2003 .

Generation of defects induced by MeV proton implantation in silicon: Influence of nuclear losses

J. Barbot, C. Blanchard, M. David, 2002 .

Electrically active defects in irradiated n-type Czochralski silicon doped with group IV impurities

E. Simoen, C. Claeys, J. Barbot, 2005 .

Formation of bubbles by high dose He implantation in 4H–SiC

M. Beaufort, J. Barbot, M. David, 2002 .

About the internal pressure in cavities derived from implantation-induced blistering in semi-conductors

M. David, J. Colin, C. Coupeau, 2011 .

Effect of pressure and stress on blistering induced by hydrogen implantation in silicon

M. David, J. Colin, C. Coupeau, 2010 .

Extended Defects Created by Light Ion Implantation in Ge

E. Simoen, C. Claeys, M. Beaufort, 2008 .

Formation of neon induced cavities in silicon by plasma based ion implantation

S. Peripolli, S. Donnelly, L. Amaral, 2006 .

Electrically active defects in irradiated 4H-SiC

A. Hallén, B. Svensson, J. Barbot, 2004 .

Silicon Pyramidal Texture Formed in Pure Hydrogen Plasma Exposure

D. Xue, W. Fahrner, R. Job, 2005 .

Evidence for Two Charge States of the S-Center in Ion-Implanted 4H-SiC

A. Hallén, B. Svensson, J. Barbot, 2003 .

Is there an impact of threading dislocations on the characteristics of devices fabricated in strained-Ge substrates?

Shawn G. Thomas, G. Eneman, J. Mitard, 2009 .

Defects induced by high energy helium implantation in 4H–SiC

M. Beaufort, J. Barbot, M. David, 2002 .