Takatomo Enoki

发表

Prospects of InP-based IC technologies for 100-GBIT/S -class lightwave communications systems

Eiichi Sano, Takatomo Enoki, Tadao Ishibashi, 2001 .

SCFL static frequency divider using InAIAs/InGaAs/InP HEMTs

Hiroshi Ito, Takatomo Enoki, Yohtaro Umeda, 1995, 1995 25th European Microwave Conference.

W-Band Active Integrated Antenna Oscillator Based on Full-Wave Design Methodology and 0.1-µm Gate InP-Based HEMTs

Hideaki Matsuzaki, Eiichi Sano, Toshihiko Kosugi, 2006, IEICE Trans. Electron..

100 Gbit/s multiplexing and demultiplexing IC operations in InP HEMT technology

Kimikazu Sano, Takatomo Enoki, H. Sugahara, 2002 .

50 Gbit/s low-jitter dynamic decision circuit using Cbc compensation and semi-feed forward techniques

Hideyuki Nosaka, K. Ishii, Takatomo Enoki, 2003 .

Bias acceleration of drain resistance increase in InP-based HEMTs and lifetime enhancement by low-bias design of ICs (AWAD2003 (Asia-Pacific Workshop on Fundamental and Application of Advanced Semiconductor Devices))

Koichi Murata, Masahiro Yamaguchi, Takatomo Enoki, 2003 .

Special Section on Heterostructure Microelectronics with TWHM2005

Takatomo Enoki, 2006, IEICE Trans. Electron..

Recent progress in 40- To 100-Gbit/s-class optical communications ICS using InP-based HBT technologies

Hideyuki Nosaka, Kimikazu Sano, K. Ishii, 2005 .

Suppression of short-channel effect in pseudomorphic In0.25Al0.75P/In0.75Ga0.25As high electron mobility transistors

Takashi Kobayashi, Hideaki Matsuzaki, Hiroki Sugiyama, 2004, IEICE Electron. Express.

Above 10 GHz frequency dividers with GaAs advanced saint and air-bridge technology

Takatomo Enoki, K. Osafune, K. Yamasaki, 1986 .

Ultra-high-speed InP-based heterostructure device technology: InP-based HFETs and HBTs : Ultra-high-speed compound semiconductor ICs

Shoji Yamahata, Takatomo Enoki, Kenji Kurishima, 1996 .

Low-power 1:16 DEMUX and one-chip CDR with 1:4 DEMUX using InP-InGaAs heterojunction bipolar transistors

Hideyuki Nosaka, Eiichi Sano, Takatomo Enoki, 2002 .

C-10-4 InP HBT 50-Gbit/s 1 : 4 Demultiplexer IC with Multiphase Clock Architecture

Kimikazu Sano, Michihiro Hirata, Koichi Murata, 2004 .

A novel loss compensation technique for high-Q broad-band active inductors

Masahiro Muraguchi, Hitoshi Hayashi, Takatomo Enoki, 1996, IEEE 1996 Microwave and Millimeter-Wave Monolithic Circuits Symposium. Digest of Papers.

ICs for 100 Gbit/s Data Transmission

Koichi Murata, Masami Tokumitsu, Takatomo Enoki, 2003 .

90 Gbit/s 0.5 W decision circuit using InP/InGaAs double heterojunction bipolar transistors

Kimikazu Sano, Koichi Murata, K. Ishii, 1996 .

Low-power 50 Gbit/s InP HBT 1:4 demultiplexer IC with multiphase clock architecture

Kimikazu Sano, Michihiro Hirata, Shoji Yamahata, 2003 .

Emitter-metal-related degradation in InP-based HBTs operating at high current density and its suppression by refractory metal

Shoji Yamahata, Takatomo Enoki, Kenji Kurishima, 2009, Microelectron. Reliab..

Novel Channel Structures for High Frequency InP-Based HFETs (Special Issue on Heterostructure Electron Devices)

Takatomo Enoki, Tatsushi Akazaki, Yasunobu Ishii, 1993 .

Differential photoconductive AND gate with low-temperature-grown InGaAs/InAlAs MQW MSM-PDs

Tadao Nagatsuma, Eiichi Sano, Mikio Yoneyama, 1995 .

160-Gbit/s (4-ch x 40-Gbit/s Electrically Multiplexed Data) WDM Transmission over 320-km Dispersion-Shifted Fiber

Shigeru Kuwano, Y. Imai, N. Takachio, 1996 .

Low-power and High-speed SCFL-inverter Using Pseudomorphic InGaAs Channel High Electron Mobility Transistors

Kimikazu Sano, Hideaki Matsuzaki, Takatomo Enoki, 2004, IEICE Electron. Express.

Vector modulator-based phase shifter with 810º control range for 43-Gbps optical transceivers

Munehiko Nagatani, Hideyuki Nosaka, Shogo Yamanaka, 2009, 2009 European Microwave Conference (EuMC).

49-GHz Operation of an SCFL Static Frequency Divider Using High-Speed Interconnections and InP-Based HEMTs

Takatomo Enoki, K. Osafune, Yohtaro Umeda, 1999 .

Novel Fabrication Technology for High Yield Sub-100-nm-Gate InP-Based HEMTs

Hideaki Matsuzaki, Takashi Maruyama, Masami Tokumitsu, 2006, IEICE Trans. Electron..

DC to 50 GHz single-pole four-throw InP-HEMT switch IC with highly uniform performance

Kazuyoshi Nishimura, Takatomo Enoki, Suehiro Sugitani, 2009 .

10 Gbit/s series-connected voltage-balancing pulse driver with direct-coupled current switches

Takatomo Enoki, Y. Umeda, A. Kanda, 2003 .

40-Gbit/s operation of InGaAs/InAlAs MQW electroabsorption modulator module with very low driving-voltage

Shigeru Kuwano, Y. Imai, Yoshio Noguchi, 1996, Proceedings of European Conference on Optical Communication.

A 10-Gb/s data-pattern independent clock and data recovery circuit with a two-mode phase comparator

Hideyuki Nosaka, K. Ishii, Takatomo Enoki, 2003 .

A 125-GHz 140-mW InGaAs/InP composite-channel HEMT MMIC power amplifier module

Koichi Murata, Akihiko Hirata, Toshihiko Kosugi, 2009, IEICE Electron. Express.

Systematic Study of Insulator Deposition Effect (Si3N4, SiO2, AlN, and Al2O3) on Electrical Properties in AlGaN/GaN Heterostructures

Takatomo Enoki, Toshiki Makimoto, Noriyuki Watanabe, 2007 .

4-bit multiplexer/demultiplexer chip set for 40-Gbit/s optical communication systems

Hideyuki Nosaka, Shoji Yamahata, Takatomo Enoki, 2003, IEEE Radio Frequency Integrated Circuits (RFIC) Symposium, 2003.

Ultra-high-speed InAlAs/InGaAs HEMT ICs using pn-level-shift diodes

Hiroshi Ito, Yohtaro Umeda, Takatomo Enoki, 1995, Proceedings of International Electron Devices Meeting.

30-nm-Gate InP-Based Lattice-Matched High Electron Mobility Transistors with 350 GHz Cutoff Frequency

Tetsuya Suemitsu, Toshiaki Tamamura, Takatomo Enoki, 1999 .

High-energy and recombination-induced electroluminescence of InAlAs/InGaAs HEMT's lattice-matched to InP substrates

Hiroshi Ito, Tomofumi Furuta, Naoteru Shigekawa, 1997 .

11 Gbit/s multiplexer and demultiplexer using 0.15 mu m GaAs MESFETs

Takatomo Enoki, Y. Yamane, Suehiro Sugitani, 1990 .

0-90 GHz InAlAs/InGaAs/InP HEMT distributed baseband amplifier IC

Y. Imai, Y. Umeda, Takatomo Enoki, 1995 .

0.3- mu m advanced SAINT FET's having asymmetric n/sup +/-layers for ultra-high-frequency GaAs MMIC's

Takatomo Enoki, K. Osafune, K. Yamasaki, 1988 .

30-nm two-step recess gate InP-Based InAlAs/InGaAs HEMTs

Tetsuya Suemitsu, Gaudenzio Meneghesso, Enrico Zanoni, 2002 .

Advanced GaAs SAINT FET Fabrication Technology and its Application to above 9 GHz Frequency Divider

Takatomo Enoki, K. Osafune, K. Yamasaki, 1985 .

A Josephson field effect transistor using an InAs‐inserted‐channel In0.52Al0.48As/In0.53Ga0.47As inverted modulation‐doped structure

Hideaki Takayanagi, Takatomo Enoki, Tatsushi Akazaki, 1996 .

13 Gb/s D-type flip-flop IC using GaS MESFETs

Kazuo Hagimoto, Takatomo Enoki, Y. Yamane, 1990 .

0.15 mu m GaAs MESFETs applied to ultrahigh-speed static frequency dividers

Takatomo Enoki, Y. Yamane, Suehiro Sugitani, 1989 .

High-electron-mobility In0.53Ga0.47As/In0.8Ga0.2As composite-channel modulation-doped structures grown by metal-organic vapor-phase epitaxy

Hideaki Matsuzaki, Hiroki Sugiyama, Takatomo Enoki, 2010, 2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM).

Over 40 Gbit/s 16:1 multiplexer IC using InP/InGaAs HBT technology

Hideyuki Nosaka, Shoji Yamahata, Takatomo Enoki, 2003 .

40 Gbit/s, fully-integrated 1:2 demultiplexer IC using InAlAs/InGaAs/InP HEMTs

Y. Imai, Yohtaro Umeda, Mikio Yoneyama, 1997 .

Very-high-speed selector IC using InP/InGaAs heterojunction bipolar transistors

Koichi Murata, Takatomo Enoki, Kenji Kurishima, 2002 .

Gate Control of Spin-Orbit Interaction in an Inverted In0

Hideaki Takayanagi, Takatomo Enoki, Tatsushi Akazaki, 1997 .

A GaAs Advanced SAINT-FET with Asymmetric N+ Layers and Its Application to a 20GHz Band Five-stage Monolithic Low Noise Amplifier

Masahiro Muraguchi, Takatomo Enoki, K. Yamasaki, 1986 .

Highly reliable InP-based HBTs with a ledge structure operating at high current density

Shoji Yamahata, Takatomo Enoki, Kenji Kurishima, 2007 .

Metal-Organic Vapor-Phase Epitaxy Growth of InP-Based Resonant Tunneling Diodes with a Strained In0.8Ga0.2As Well and AlAs Barriers

Hideaki Matsuzaki, Hiroki Sugiyama, Takatomo Enoki, 2005 .

Over-60-GHz design technology for an SCFL dynamic frequency divider using InP-based HEMTs

Yohtaro Umeda, Takatomo Enoki, K. Osafune, 1998 .

4-bit multiplexer/demultiplexer chip set for 40-Gbit/s optical communication systems

Hideyuki Nosaka, Shoji Yamahata, Takatomo Enoki, 2003, RFIC 2003.

Metal-Organic Vapor-Phase Epitaxy of Pseudomorphic InAlP/InGaAs High Electron Mobility Transistor Wafers

Hideaki Matsuzaki, Hiroki Sugiyama, Takatomo Enoki, 2005 .

Improved Recessed-Gate Structure for Sub-0.1-µm-Gate InP-Based High Electron Mobility Transistors

Tetsuya Suemitsu, Takatomo Enoki, Haruki Yokoyama, 1998 .

High-Performance InGaAs/InP Composite-Channel High Electron Mobility Transistors Grown by Metal–Organic Vapor-Phase Epitaxy

Toshihiko Kosugi, Masami Tokumitsu, Hiroki Sugiyama, 2007 .

80 Gbit/s multiplexer IC using InAlAs/InGaAs/InP HEMTs

Y. Imai, Yohtaro Umeda, Mikio Yoneyama, 1997 .

40-Gbit/s ICs for future lightwave communications systems

Y. Imai, Takatomo Enoki, Taiichi Otsuji, 1996 .

High-Performance InAlAs/InGaAs HEMTs and Their Application to a 40-GHz Monolithic Amplifier

Yohtaro Umeda, Takatomo Enoki, Yasunobu Ishii, 1992 .

A differential photoconductive AND gate with Be-doped low-temperature-grown InGaAs-InAlAs MQW MSM-PD's

Tadao Nagatsuma, Eiichi Sano, Mikio Yoneyama, 1997 .

A high-Q broad-band active inductor and its application to a low-loss analog phase shifter

Masahiro Muraguchi, Hitoshi Hayashi, Yohtaro Umeda, 1996 .

Characteristics including electron velocity overshoot for 0.1- mu m-gate-length GaAs SAINT MESFET's

Takatomo Enoki, Y. Yamane, Suehiro Sugitani, 1990 .

Loss-Compensated istributed Baseban Amplifier IC's for Optical Transmission Sy

Y. Umeda, Takatomo Enoki, Yuhki Imai, 1996 .

High-performance 0.1-/spl mu/m gate enhancement-mode InAlAs/InGaAs HEMT's using two-step recessed gate technology

Tetsuya Suemitsu, Yohtaro Umeda, Takatomo Enoki, 1999 .

An 80-Gbit/s 2:1 Multiplexer IC Using InGaAs/InAlAs/InP HEMTs

Yohtaro Umeda, Koichi Murata, Takatomo Enoki, 1998 .

46 Gbit/s multiplexer and 40 Gbit/s demultiplexer IC modules using InAlAs/InGaAs/InP HEMTs

Eiichi Sano, Y. Imai, Yohtaro Umeda, 1996 .

Exclusive OR/NOR IC for >40 Gbit/s optical transmission systems

Yohtaro Umeda, K. Murata, Takatomo Enoki, 1998 .

Photo-patternable optical chemical sensors based on hybrid sol-gel materials

Hideyuki Nosaka, Michihiro Hirata, Shoji Yamahata, 2003 .