E. Sauvain

发表

Laser action in strongly scattering media

N. Lawandy, A. Gomes, R. Balachandran, 1994, Nature.

Laser action in strongly scattering media

N. Lawandy, A. Gomes, R. Balachandran, 1994, Nature.

Characterization of a‐Ge:H with the steady‐state photocarrier grating measurement

Jikun Chen, E. Sauvain, 1994 .

Effect of the dangling-bond charge on the ambipolar diffusion length in a-Si: H

A. Shah, E. Sauvain, J. Hubin, 1991 .

Dependence of the light‐induced degradation kinetics of photoconductivity and ambipolar diffusion length as a function of doping level in a‐Si:H

Arvind Shah, E. Sauvain, J. Hubin, 1994 .

Temperature-dependent photoluminescence in porous amorphous silicon

E. Sauvain, É. Bustarret, M. Ligeon, 1996 .

Consistency between Experimental Data for Ambipolar Diffusion Length and for Photoconductivity when Incorporated into the Standard Defect Model for a-Si:H

Arvind Shah, E. Sauvain, J. Hubin, 1995 .

Deposition of Thin-Film Silicon for Photovoltaics: Use of VHF-GD and OES

J. Meier, Arvind Shah, P. Torres, 1998 .

Low dimensional dispersive transport at nanocrystal interfaces

N. Lawandy, G. Beadie, E. Sauvain, 1995 .

Effects of dangling bonds on the recombination function in amorphous semiconductors

A. Shah, E. Sauvain, J. Hubin, 1992 .