Y. André

发表

Selective epitaxial growth of GaAs tips for local spin injector applications

B. Gérard, A. Rowe, R. Ramdani, 2007 .

Optical and structural analysis of ultra-long GaAs nanowires after nitrogen-plasma passivation

R. LaPierre, C. Bougerol, J. Leymarie, 2020 .

Si doping of vapor-liquid-solid GaAs nanowires: n-type or p-type?

P. Hoggan, R. LaPierre, C. Bougerol, 2019, Nano letters.

Influence of Silicon on the Nucleation Rate of GaAs Nanowires on Silicon Substrates

C. Bougerol, V. Dubrovskii, C. Robert-Goumet, 2018, The Journal of Physical Chemistry C.

Compositional control of homogeneous InGaN nanowires with the In content up to 90%

H. Amano, C. Bougerol, V. Dubrovskii, 2018, Nanotechnology.

Circumventing the miscibility gap in InGaN nanowires emitting from blue to red

C. Bougerol, V. Dubrovskii, J. Leymarie, 2018, Nanotechnology.

Formation of voids in selective area growth of InN nanorods in SiNx on GaN templates

C. Bougerol, V. Dubrovskii, P. Ferret, 2020, Nano Futures.

Selective growth of ordered hexagonal InN nanorods

T. Taliercio, T. Cornelius, C. Bougerol, 2019, CrystEngComm.

Spatially resolved optical control of GaN grown by selective area hydride vapor phase epitaxy

J. Leymarie, E. Gil, Y. André, 2015 .

Complete HVPE experimental investigations: Cartography of SAG GaN towards quasi-substrates or nanostructures

E. Gil, Y. André, A. Trassoudaine, 2010 .

A complete crystallographic study of GaN epitaxial morphologies in selective area growth by hydride vapour phase epitaxy (SAG-HVPE)

E. Gil, Y. André, A. Trassoudaine, 2009 .

GaN Rods Grown on Si by SAG-HVPE toward GaN HVPE/InGaN MOVPE Core/Shell Structures

C. Bougerol, B. Gayral, A. Dussaigne, 2016 .

Hydride Vapor Phase Epitaxy for Current III–V and Nitride Semiconductor Compound Issues

E. Gil, Y. André, A. Trassoudaine, 2015 .

Exceptional Crystal-Defined Bunched and Hyperbunched GaN Nanorods Grown by Catalyst-Free HVPE

E. Gil, Y. André, A. Trassoudaine, 2012 .

Self-catalyzed GaAs nanowires on silicon by hydride vapor phase epitaxy

C. Bougerol, V. Dubrovskii, G. Monier, 2017, Nanotechnology.

Nucleation and initial radius of self-catalyzed III-V nanowires

V. Dubrovskii, E. Gil, Y. André, 2017 .

Demonstration of crystal–vapor equilibrium leading to growth blockade of GaN during selective area growth

E. Gil, Y. André, A. Trassoudaine, 2012 .

Low-cost high-quality GaN by one-step growth

E. Gil, Y. André, A. Trassoudaine, 2008 .

Investigation of N2 plasma GaAs surface passivation efficiency against air exposure: Towards an enhanced diode

P. Hoggan, J. Leymarie, B. Gruzza, 2022, Applied Surface Science.

Catalyst-assisted hydride vapor phase epitaxy of GaN nanowires: exceptional length and constant rod-like shape capability

C. Bougerol, G. Monier, E. Gil, 2012, Nanotechnology.

Local spin injectors using GaAs tips under light excitation

B. Gérard, A. Rowe, R. Ramdani, 2010 .

Ultralong and defect-free GaN nanowires grown by the HVPE process.

C. Bougerol, J. Leymarie, G. Monier, 2014, Nano letters.

Growth of long III-As NWs by hydride vapor phase epitaxy

E. Gil, Y. André, 2021, Nanotechnology.

Hydride VPE: the unexpected process for the fast growth of GaAs and GaN nanowires with record aspect ratio and polytypism-free crystalline structure

Christelle Varenne, François Réveret, Dominique Castelluci, 2013, Smart Materials, Nano-, and Micro- Smart Systems.

Limitation of simple np-n tunnel junction based LEDs grown by metal-organic vapor phase epitaxy

M. Pristovsek, Y. André, A. Trassoudaine, 2020, Semiconductor Science and Technology.

Low dislocation density high-quality thick hydride vapour phase epitaxy (HVPE) GaN layers

R. Cadoret, Yamina André, Agnès Trassoudaine, 2007 .

Fast growth synthesis of GaAs nanowires with exceptional length.

C. Robert-Goumet, G. Monier, E. Gil, 2010, Nano letters.

Record pure zincblende phase in GaAs nanowires down to 5 nm in radius.

V. Dubrovskii, J. Harmand, F. Glas, 2014, Nano letters.

Crystal engineering by tuning the growth kinetics of GaN 3-D microstructures in SAG-HVPE

H. Amano, S. Bae, E. Gil, 2018 .

Long catalyst-free InAs nanowires grown on silicon by HVPE

R. LaPierre, C. Bougerol, V. Dubrovskii, 2021, CrystEngComm.

Selective Area Growth by Hydride Vapor Phase Epitaxy and Optical Properties of InAs Nanowire Arrays

K. Moselund, H. Schmid, T. Taliercio, 2021, Crystal Growth & Design.

Selective Area Growth of GaAs Nanowires and Microplatelet Arrays on Silicon by Hydride Vapor-Phase Epitaxy

K. Moselund, H. Schmid, R. LaPierre, 2023, Crystal Growth & Design.

Vapor liquid solid-hydride vapor phase epitaxy (VLS-HVPE) growth of ultra-long defect-free GaAs nanowires: ab initio simulations supporting center nucleation.

P. Hoggan, A. Rowe, G. Monier, 2014, The Journal of chemical physics.

Record high-aspect-ratio GaAs nano-grating lines grown by Hydride Vapor Phase Epitaxy (HVPE)

C. Fontaine, E. Gil, Y. André, 2013 .

Continuous wave and ultra-fast reflectivity studies for the determination of GaN excitonic oscillator strengths as a function of the in-plane biaxial strain

J. Leymarie, A. Vasson, Y. André, 2006 .

Dynamics of Gold Droplet Formation on SiO2/Si(111) Surface

F. Leroy, R. LaPierre, V. Dubrovskii, 2020, The Journal of Physical Chemistry C.

Dynamics of Gold Droplet Formation on SiO 2 /Si(111) Surface

F. Leroy, V. Dubrovskii, C. Robert-Goumet, 2020 .

Continuous-wave and ultrafast coherent reflectivity studies of excitons in bulk GaN

J. Leymarie, A. Vasson, M. Leroux, 2008 .

Importance of As and Ga Balance in Achieving Long GaAs Nanowires by Selective Area Epitaxy

H. Schmid, R. LaPierre, C. Bougerol, 2023, Crystal Growth & Design.