O. Machida

A novel high efficiency gate drive circuit for normally off type GaN-FET

H. Umegami, Y. Nozaki, M. Yamamoto, 2012, 2012 IEEE Energy Conversion Congress and Exposition (ECCE).

Evaluation of AlGaN/GaN Heterostructure Field-Effect Transistors on Si Substrate in Power Factor Correction Circuit

Nobuo Kaneko, Masataka Yanagihara, Shinichi Iwakami, 2007 .

AlGaN/GaN Heterostructure Field-Effect Transistors (HFETs) on Si Substrates for Large-Current Operation

Nobuo Kaneko, Masataka Yanagihara, Shinichi Iwakami, 2004 .

Normally-off AlGaN/GaN HFETs using NiOx gate with recess

Osamu Machida, Nobuo Kaneko, Masataka Yanagihara, 2009, 2009 21st International Symposium on Power Semiconductor Devices & IC's.