P. Lemasson

发表

Physical characteristics of TTV03, a new high spatial resolution time-of-flight positron tomograph

B. Mazoyer, R. Trébossen, O. Monnet, 1990 .

Optical and electro-optical behaviour of polished and etched zinc selenide single crystals

P. Lemasson, C. Raisin, J. Gautron, 1982 .

Electrolyte-semiconductor junctions in the case of p-type II-VI alloys with common telluride anion

P. Lemasson, 1983 .

Keyhole Formation During Spot Laser Welding: Heat and Fluid Flow Modeling in a 2D Axisymmetric Configuration

P. Lemasson, M. Courtois, M. Carin, 2012 .

Flat band potential determination of an electrolyte/semiconductor junction by an electro-optical method

P. Lemasson, J. Gautron, J. Dalbera, 1981 .

Largely tunable midinfrared (8-12 μm) difference frequency generation in isotropic semiconductors

R. Triboulet, E. Rosencher, P. Lemasson, 2002 .

Photoresponse at the semiconductor-electrolyte junction: Influence of the space charge region width

A. Etcheberry, P. Lemasson, J. Sculfort, 1984 .

Selective photoluminescence spectroscopy of shallow levels in wide band gap semiconductors

N. Grandjean, F. Semond, R. Triboulet, 2001 .

Room-temperature electroluminescence in the mid-infrared (2-3 microm) from bulk chromium-doped ZnSe.

S. Collin, N. Bardou, M. Caes, 2006, Optics letters.

Generation of mid-infrared radiation by self-difference frequency mixing in chromium-doped zinc selenide.

E. Rosencher, P. Lemasson, R. Haïdar, 2006, Optics letters.

Analysis of photocurrents at the semiconductor—eletrolyte junction

A. Etcheberry, P. Lemasson, J. Gautron, 1982 .

Diffusion length of minority carrier in n‐type semiconductors: A photoelectrochemical determination in aqueous solvents

M. Etman, P. Lemasson, J. Gautron, 1982 .

Photoelectrochemical determination of minority carrier diffusion length in II–VI compounds

P. Lemasson, J. Gautron, 1982 .

Electrochemistry: A versatile technique for investigation of bulk and surface properties of II–VI compounds

P. Lemasson, 1985 .

Photoelectrochemical study of (Ti,V)O2 and (Ti,Nb)O2 alloys

B. Poumellec, P. Lemasson, J. Marucco, 1983 .

Current photoresponse of an electrolyte–zinc selenide junction

P. Lemasson, J. Gautron, 1979 .

The semiconductor-electrolyte interface: optical transitions in CdMnTe alloys

R. Triboulet, P. Lemasson, Bing Wu, 1983 .

Optical transmission of ZnSe crystals grown by solid phase recrystallization

J. Roger, R. Triboulet, P. Lemasson, 1999 .

Thermodynamic properties of titanium dioxide, niobium dioxide and their solid solutions at high temperature

B. Poumellec, P. Lemasson, J. Marucco, 1985 .

Quasi-phase-matched difference frequency generation (8–13 μm) in an isotropic semiconductor using total reflection

R. Triboulet, E. Rosencher, P. Lemasson, 2003 .

Quasi-phase matched tunable mid-infrared (8-12 /spl mu/m) difference frequency generation by total internal reflection in isotropic semiconductors

R. Triboulet, E. Rosencher, P. Lemasson, 2002, CLEO 2002.

On the anodic decomposition of the zinc selenide electrode

P. Lemasson, J. Gautron, 1981 .

Interfacial processes induced by dissolved oxidising species at p-ZnTe and n-ZnSe electrodes

P. Lemasson, J. Gautron, B. Wu, 1983 .

Electrochemical Behavior of an Aqueous Electrolyte/I‐Doped ZnSe Junction in the Dark and under Illumination

R. Triboulet, P. Lemasson, J. Gautron, 1979 .

Photoelectrochemical study of the layered compound In23Pse3

A. Katty, C. Lévy‐Clément, M. Etman, 1982 .

Optical Studies of ZnXTe(X=Mn,Hg) Alloys

P. Lemasson, C. V. Huong, 1989 .

Optical investigation of the diluted magnetic semiconductor Zn1−xMnxTe

R. Triboulet, P. Lemasson, J. Lascaray, 1988 .

Reduction and doping of semiconducting rutile (TiO2)

P. Lemasson, J. Marucco, J. Gautron, 1981 .

Random quasi-phase-matching in bulk polycrystalline isotropic nonlinear materials

E. Rosencher, R. Haïdar, E. Rosencher, 2004, Nature.

Electro‐optical Investigation of the Potential Drop at III/V Semiconductor/Electrolyte Interfaces

P. Lemasson, C. V. Huong, 1988 .

The semiconductor-electrolyte junction: Surface and bulk properties of Hg1−xCdxTe (0.6 ⩽ x ⩽ 1)

R. Triboulet, C. Hinnen, P. Lemasson, 1985 .

New results on the solid-phase recrystallisation of ZnSe

S. Fusil, A. Zozime, É. Tournié, 1998 .

Growth by solid phase recrystallization and assessment of large ZnSe crystals of high purity and structural perfection

R. Triboulet, A. Tromson-Carli, P. Lemasson, 1996 .

Hg1−xCdxTe (0 ≦x ≦ 1): a correlation between stoichiometry, surface preparation and electroreflectance measurements

P. Lemasson, C. V. Huong, 1990 .

The semiconductor‐electrolyte junction: Physical parameters determination by photocurrent measurement throughout the Cd1−xZnxTe alloy series

R. Triboulet, P. Lemasson, A. Forveille‐Boutry, 1984 .

Free excitons at room temperature in cadmium telluride : A photoelectrochemical evidence

P. Lemasson, 1982 .

2D axial-symmetric model for fluid flow and heat transfer in the melting and resolidification of a vertical cylinder

R. Fabbro, P. Peyre, P. Lemasson, 2010 .

Generation of 8-12 /spl mu/m radiation by self-difference frequency mixing in Cr:ZnSe

E. Rosencher, P. Lemasson, M. Raybaut, 2005, (CLEO). Conference on Lasers and Electro-Optics, 2005..

Electroluminescence of the electrolyte/n-ZnSe junction under anodic polarization

P. Lemasson, P. Lemasson, J. Gautron, 1980 .

Weld Pool Shape Identification by Using Bezier Surfaces

Yvon Jarny, Y. Jarny, P. Lemasson, 2011 .

A Capacitance and Electrolyte Electroreflectance Study of the ZnSe / Electrolyte Interface

C. Hinnen, P. Lemasson, N. Tacconi, 1985 .

A Capacitance and Electrolyte Electroreflectance Study of the ZnSe/Electrolyte Interface.

C. Hinnen, P. Lemasson, N. Tacconi, 1986 .

Influence of the Solvent on the Electrochemical Stability of a Semiconductor Electrode

M. Herlem, P. Lemasson, J. Gautron, 1982 .

The semiconductor/electrolyte interface: A re-examination of n-type Cadmium Telluride electrodes

R. Triboulet, P. Lemasson, 1988 .

The Semiconductor‐Electrolyte Interface Photocurrent and Related Parameters in Cadmium Telluride

R. Triboulet, P. Lemasson, J. Sculfort, 1984 .

On the Use of Electroreflectance in the Interpretation of Anodic Electrochemical Behavior of the ZnSe Semiconductor Electrode

P. Lemasson, J. Gautron, J. Dalbera, 1980 .

Electrochemical and electro-optical properties of Hg1−xZnxTe

R. Triboulet, P. Lemasson, C. V. Huong, 1988 .