A. Csóré

发表

Determination of Dislocation Density in Cubic Systems

P. Szabó, A. Csóré, 2015 .

NV centers in 3 C ,4 H , and 6 H silicon carbide: A variable platform for solid-state qubits and nanosensors

U. Gerstmann, Á. Gali, E. Rauls, 2016 .

Characterization and formation of NV centers in 3C, 4H, and 6H SiC: An ab initio study CHARACTERIZATION and FORMATION of NV CENTERS ... CSÓRÉ, von BARDELEBEN, CANTIN, and GALI

Á. Gali, A. Csóré, J. Cantin, 2017 .

Point Defects in Silicon Carbide for Quantum Technology

Á. Gali, A. Csóré, 2021, Wide Bandgap Semiconductors for Power Electronics.

Optical Properties of Vanadium in 4H Silicon Carbide for Quantum Technology — Source link

T. Fromherz, Á. Gali, J. Hassan, 2022 .

Determination of dislocation density by electron backscatter diffraction and X-ray line profile analysis in ferrous lath martensite

P. Szabó, J. Gubicza, P. Jenei, 2016 .

Density Functional Theory on NV Center in 4H SiC

Á. Gali, A. Csóré, 2016, 2016 European Conference on Silicon Carbide & Related Materials (ECSCRM).

Fluorescence spectrum and charge state control of divacancy qubits via illumination at elevated temperatures in 4H silicon carbide

I. Ivanov, Á. Gali, A. Csóré, 2022, Physical Review B.

Photoluminescence spectrum of divacancy in porous and nanocrystalline cubic silicon carbide

Á. Gali, A. Csóré, D. Beke, 2022, Journal of Applied Physics.