D. Mosher

Self-aligned RESURF to LOCOS region LDMOS characterization shows excellent R/sub sp/ vs BV performance

T. Efland, P. Mei, D. Mosher, 1996, 8th International Symposium on Power Semiconductor Devices and ICs. ISPSD '96. Proceedings.

off-State Degradation in Drain-Extended NMOS Transistors: Interface Damage and Correlation to Dielectric Breakdown

H. Shichijo, H. Kufluoglu, D. Varghese, 2007, IEEE Transactions on Electron Devices.

The fabrication of both n-type and p-type GaAs thin films deposited by troide sputtering

R. J. Soukup, D. Mosher, 1982 .

Multi-probe Two-Dimensional Mapping of Off-State Degradation in DeNMOS Transistors: How and Why Interface Damage Predicts Gate Dielectric Breakdown

M.A. Alam, V. Reddy, S. Krishnan, 2007, 2007 IEEE International Electron Devices Meeting.

High-Voltage Drain Extended MOS Transistors for 0.18 um Logic CMOS Process

H. Shichijo, D. Mosher, T. Efland, 2000, 30th European Solid-State Device Research Conference.

A comprehensive analysis of off-state stress in drain extended PMOS transistors: Theory and characterization of parametric degradation and dielectric failure

D. Varghese, M.A. Alam, H. Shichijo, 2008, 2008 IEEE International Reliability Physics Symposium.

The advantages of Sun tracking for planar silicon solar cells

R. J. Soukup, Rodney J. Soukup, D. M. Mosher, 1977 .

The through-film electrical properties of sputtered GaAs films with aluminum contacts

R. J. Soukup, D. Mosher, A. Kulkarni, 1978 .

A 65 nm CMOS technology for mobile and digital signal processing applications

D. Mosher, H. Mair, D. Scott, 2004, IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004..

High-voltage drain extended MOS transistors for 0.18-/spl mu/m logic CMOS process

Taylor R. Efland, Jozef Czeslaw Mitros, Chin-Yu Tsai, 2001 .