Yang Lei

Performance Comparison of 1200 V 100 A SiC MOSFET and 1200 V 100 A Silicon IGBT

Fei Wang, A. Huang, Gangyao Wang, 2013 .

Understanding switching losses in SiC MOSFET: Toward lossless switching

A. Huang, B. Zhang, Xuan Li, 2015, 2015 IEEE 3rd Workshop on Wide Bandgap Power Devices and Applications (WiPDA).

Design and application of a 1200V ultra-fast integrated Silicon Carbide MOSFET module

Wensong Yu, Alex Q. Huang, Suxuan Guo, 2016, 2016 IEEE Applied Power Electronics Conference and Exposition (APEC).

Performance comparison of 1200V 100A SiC MOSFET and 1200V 100A silicon IGBT

Fei Wang, A. Huang, M. Das, 2013, 2013 IEEE Energy Conversion Congress and Exposition.

Research on GaAs-based RTD performance analyses and switching time characteristics

Yang Lei, Liu Chao, Niu Ping-juan, 2017 .

3.38 Mhz operation of 1.2kV SiC MOSFET with integrated ultra-fast gate drive

Wensong Yu, Alex Q. Huang, Yang Lei, 2015, 2015 IEEE 3rd Workshop on Wide Bandgap Power Devices and Applications (WiPDA).

High bandwidth current sensing of SiC MOSFET with a Si current mirror

Alex Q. Huang, Pengkun Liu, Suxuan Guo, 2016, 2016 IEEE 4th Workshop on Wide Bandgap Power Devices and Applications (WiPDA).

Integrated SiC MOSFET module with ultra low parasitic inductance for noise free ultra high speed switching

Wensong Yu, Alex Q. Huang, Yang Lei, 2015, 2015 IEEE 3rd Workshop on Wide Bandgap Power Devices and Applications (WiPDA).