J. Ku

Interconnect capacitance characterization using charge-injection-induced error-free (CIEF) charge-based capacitance measurement (CBCM)

Chih-Yuan Lu, Ya-chin King, Yao-Wen Chang, 2006, IEEE Transactions on Semiconductor Manufacturing.

BE-SONOS: A bandgap engineered SONOS with excellent performance and reliability

Y. Shih, E. Lai, K. Hsieh, 2005, IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest..

Novel operation schemes to improve device reliability in a localized trapping storage SONOS-type flash memory

Chih-Yuan Lu, Tahui Wang, N. Zous, 2003, IEEE International Electron Devices Meeting 2003.

A novel erase scheme to suppress overerasure in a scaled 2-bit nitride storage flash memory cell

Tahui Wang, Chih-Yuan Lu, Tao-Cheng Lu, 2004, IEEE Electron Device Letters.

Relationship between AC stress and DC stress on tunnel oxides

Chih-Yuan Lu, Tahui Wang, N. Zous, 2004, Proceedings of the 11th International Symposium on the Physical and Failure Analysis of Integrated Circuits. IPFA 2004 (IEEE Cat. No.04TH8743).

Thermal stability enhancement of silicides by using N2 and Ar implantation

Chih-Yuan Lu, Ling-Wu Yang, Kuang-Chao Chen, 2005 .

Dual gate oxide integrity improvement by implementing nitrogen implantation technology

Chih-Yuan Lu, J. Hsieh, Ling-Wu Yang, 2005 .

A novel silicon-nitride based light-emitting transistor (SiNLET): optical/electrical properties of a SONOS-type three-terminal electroluminescence device for optical communication in ULSI

Y.R. Chen, Chih-Yuan Lu, Tahui Wang, 2005, IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest..

Lateral migration of trapped holes in a nitride storage flash memory cell and its qualification methodology

T.C. Lu, W.J. Tsai, J. Ku, 2004, IEEE Electron Device Letters.

Highly Scalable and Reliable Multi-bit/cell Nitride Trapping Nonvolatile Memory Using Enhanced ANS-ONO Process with A Nitridized Interface

Y. Shih, E. Lai, K. Hsieh, 2006, 2006 International Electron Devices Meeting.