D. Marcon

发表

A 96% Efficient High-Frequency DC–DC Converter Using E-Mode GaN DHFETs on Si

S. Decoutere, J. Driesen, G. Borghs, 2011, IEEE Electron Device Letters.

Evidence of Time-Dependent Vertical Breakdown in GaN-on-Si HEMTs

S. Decoutere, M. Meneghini, G. Meneghesso, 2017, IEEE Transactions on Electron Devices.

Analysis of the Gate Capacitance–Voltage Characteristics in p-GaN/AlGaN/GaN Heterostructures

S. Decoutere, N. Ronchi, Tian-Li Wu, 2017, IEEE Electron Device Letters.

Negative Bias-Induced Threshold Voltage Instability in GaN-on-Si Power HEMTs

S. Decoutere, M. Meneghini, G. Meneghesso, 2016, IEEE Electron Device Letters.

New source-side breakdown mechanism in AlGaN/GaN insulated-gate HEMTs

S. Decoutere, S. Bahl, M. Van Hove, 2013, 2013 25th International Symposium on Power Semiconductor Devices & IC's (ISPSD).

Kinetics of Buffer-Related RON-Increase in GaN-on-Silicon MIS-HEMTs

S. Decoutere, M. Meneghini, G. Meneghesso, 2014, IEEE Electron Device Letters.

Demonstration of Field- and Power-Dependent ESD Failure in AlGaN/GaN RF HEMTs

M. Meneghini, G. Meneghesso, F. Rampazzo, 2015, IEEE Transactions on Electron Devices.

A comprehensive reliability investigation of the voltage-, temperature- and device geometry-dependence of the gate degradation on state-of-the-art GaN-on-Si HEMTs

G. Meneghesso, S. Decoutere, M. Van Hove, 2010, 2010 International Electron Devices Meeting.

Time-dependent degradation of AlGaN/GaN high electron mobility transistors under reverse bias

Gaudenzio Meneghesso, Denis Marcon, Enrico Zanoni, 2012 .

AlGaN/GaN-Based HEMTs Failure Physics and Reliability: Mechanisms Affecting Gate Edge and Schottky Junction

Gaudenzio Meneghesso, Denis Marcon, Enrico Zanoni, 2013, IEEE Transactions on Electron Devices.

Trapping in GaN-based metal-insulator-semiconductor transistors: Role of high drain bias and hot electrons

Gaudenzio Meneghesso, Denis Marcon, Enrico Zanoni, 2014 .

HBM ESD robustness of GaN-on-Si Schottky diodes

D. Linten, S. Decoutere, G. Groeseneken, 2011, EOS/ESD Symposium Proceedings.

Positive bias temperature instability evaluation in fully recessed gate GaN MIS-FETs

Guido Groeseneken, Jacopo Franco, Denis Marcon, 2016, 2016 IEEE International Reliability Physics Symposium (IRPS).

Toward Understanding Positive Bias Temperature Instability in Fully Recessed-Gate GaN MISFETs

Guido Groeseneken, Jacopo Franco, Denis Marcon, 2016, IEEE Transactions on Electron Devices.

AlGaN/GaN field effect transistors for power electronics—Effect of finite GaN layer thickness on thermal characteristics

M. Kuball, S. Stoffels, D. Marcon, 2013 .

Si Trench Around Drain (STAD) technology of GaN-DHFETs on Si substrate for boosting power performance

S. Decoutere, I. De Wolf, R. Mertens, 2011, 2011 International Electron Devices Meeting.

Degradation of AlGaN/GaN Schottky diodes on silicon: Role of defects at the AlGaN/GaN interface

Gaudenzio Meneghesso, Denis Marcon, Enrico Zanoni, 2013 .

GaN-on-Silicon CMOS-Compatible Process

S. Stoffels, D. Marcon, 2017 .

Device breakdown optimization of AhOs/GaN MISFETs

S. Decoutere, B. de Jaeger, D. Wellekens, 2016, 2016 IEEE International Reliability Physics Symposium (IRPS).

GaN-on-Si power field effect transistors

S. Decoutere, G. Borghs, M. Germain, 2010, Proceedings of 2010 International Symposium on VLSI Technology, System and Application.

650 V Dispersion-free enhancement-mode GaN-on-Si HEMTs processed in a 200 mm CMOS Fab

S. Decoutere, W. Luo, D. Marcon, 2017, 2017 14th China International Forum on Solid State Lighting: International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS).

2 kV Breakdown Voltage GaN – on-Si DHFETs with Submicron Thin AlGaN Buffer

S. Decoutere, M. V. Hove, R. Mertens, 2011 .

ON-State Degradation in AlGaN/GaN-on-Silicon Schottky Barrier Diodes: Investigation of the Geometry Dependence

S. Decoutere, A. Tallarico, C. Fiegna, 2016, IEEE Transactions on Electron Devices.

Reliability of Au-Free AlGaN/GaN-on-Silicon Schottky Barrier Diodes Under ON-State Stress

S. Decoutere, A. Tallarico, C. Fiegna, 2016, IEEE Transactions on Electron Devices.

GAN-on-Si HEMTs for 50V RF applications

S. Decoutere, F. Vanaverbeke, R. Venegas, 2012, 2012 7th European Microwave Integrated Circuit Conference.

Field-effect saccharide sensing using AlGaN/GaN heterostructures and boronic acid based chemical receptors

Stephen E. Flower, M. Germain, T. James, 2011 .

A novel degradation mechanism of AlGaN/GaN/Silicon heterostructures related to the generation of interface traps

M. Vanzi, M. Meneghini, G. Meneghesso, 2012, 2012 International Electron Devices Meeting.

Understanding the degradation sources under ON-state stress in AlGaN/GaN-on-Si SBD: Investigation of the anode-cathode spacing length dependence

S. Decoutere, A. Tallarico, C. Fiegna, 2016, 2016 IEEE International Reliability Physics Symposium (IRPS).

The 2018 GaN power electronics roadmap

Alex Q. Huang, Yuhao Zhang, Xu Li, 2018, Journal of Physics D: Applied Physics.

Trapping and Reliability Assessment in D-Mode GaN-Based MIS-HEMTs for Power Applications

Gaudenzio Meneghesso, Denis Marcon, Enrico Zanoni, 2014, IEEE transactions on power electronics.

Impact of gate insulator on the dc and dynamic performance of AlGaN/GaN MIS-HEMTs

Gaudenzio Meneghesso, Denis Marcon, Enrico Zanoni, 2015, Microelectron. Reliab..

Trapping mechanisms in GaN‐based MIS‐HEMTs grown on silicon substrate

Gaudenzio Meneghesso, Denis Marcon, Enrico Zanoni, 2015 .

Analysis of slow de-trapping phenomena after a positive gate bias on AlGaN/GaN MIS-HEMTs with in-situ Si3N4/Al2O3 bilayer gate dielectrics

Guido Groeseneken, Denis Marcon, Stefaan Decoutere, 2015 .

Breakdown investigation in GaN-based MIS-HEMT devices

Fabio Alessio Marino, Gaudenzio Meneghesso, Denis Marcon, 2014, 2014 44th European Solid State Device Research Conference (ESSDERC).

Reliability Analysis of Permanent Degradations on AlGaN/GaN HEMTs

Gaudenzio Meneghesso, Denis Marcon, Enrico Zanoni, 2013, IEEE Transactions on Electron Devices.

Reliability of AlGaN/GaN HEMTs: Permanent leakage current increase and output current drop

Denis Marcon, Stefaan Decoutere, Xuanwu Kang, 2012, Proceedings of the 20th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA).

GaN-based HEMTs tested under high temperature storage test

Denis Marcon, Stefaan Decoutere, G. Borghs, 2011, Microelectron. Reliab..

GaN‐on‐Si HEMT stress under high electric field condition

Denis Marcon, Robert Mertens, Gustaaf Borghs, 2009 .

Gate Stability of GaN-Based HEMTs with P-Type Gate

Gaudenzio Meneghesso, Niels Posthuma, Denis Marcon, 2016 .

Stability evaluation of Au-free Ohmic contacts on AlGaN/GaN HEMTs under a constant current stress

Guido Groeseneken, Denis Marcon, Stefaan Decoutere, 2014, Microelectron. Reliab..

IV, noise and electroluminescence analysis of stress-induced percolation paths in AlGaN/GaN high electron mobility transistors

Sergey Bychikhin, Dionyz Pogany, Gaudenzio Meneghesso, 2012, Microelectron. Reliab..

Electroluminescence analysis of time-dependent reverse-bias degradation of HEMTs: A complete model

Gaudenzio Meneghesso, Denis Marcon, Enrico Zanoni, 2011, 2011 International Electron Devices Meeting.

Time dependent dielectric breakdown (TDDB) evaluation of PE-ALD SiN gate dielectrics on AlGaN/GaN recessed gate D-mode MIS-HEMTs and E-mode MIS-FETs

Guido Groeseneken, Denis Marcon, Stefaan Decoutere, 2015, 2015 IEEE International Reliability Physics Symposium.

PBTI in GaN-HEMTs With p-Type Gate: Role of the Aluminum Content on $\Delta V_{\mathrm {TH}}$ and Underlying Degradation Mechanisms

Enrico Sangiorgi, Paolo Magnone, Niels Posthuma, 2018, IEEE Transactions on Electron Devices.

Failure mode for p-GaN gates under forward gate stress with varying Mg concentration

S. Decoutere, C. Fiegna, B. Bakeroot, 2017, 2017 IEEE International Reliability Physics Symposium (IRPS).

Study of the stability of e-mode GaN HEMTs with p-GaN gate based on combined DC and optical analysis

Gaudenzio Meneghesso, Denis Marcon, Enrico Zanoni, 2016, Microelectron. Reliab..

Forward Bias Gate Breakdown Mechanism in Enhancement-Mode p-GaN Gate AlGaN/GaN High-Electron Mobility Transistors

Guido Groeseneken, Niels Posthuma, Denis Marcon, 2015, IEEE Electron Device Letters.

Comprehensive investigation of on-state stress on D-mode AlGaN/GaN MIS-HEMTs

S. Decoutere, M. Van Hove, G. Groeseneken, 2013, 2013 IEEE International Reliability Physics Symposium (IRPS).

Switching assessment of GaN transistors for power conversion applications

M. Van Hove, M. Germain, G. Borghs, 2009, 2009 13th European Conference on Power Electronics and Applications.

Integration of 650 V GaN Power ICs on 200 mm Engineered Substrates

S. Decoutere, G. Groeseneken, D. Wellekens, 2020, IEEE Transactions on Semiconductor Manufacturing.

Preliminary reliability at 50 V of state-of-the-art RF power GaN-on-Si HEMTs

S. Decoutere, M. Germain, J. Das, 2010, 68th Device Research Conference.

Low On-Resistance High-Breakdown Normally Off AlN/GaN/AlGaN DHFET on Si Substrate

M. Van Hove, M. Germain, G. Borghs, 2010, IEEE Electron Device Letters.

Direct comparison of GaN-based e-mode architectures (recessed MISHEMT and p-GaN HEMTs) processed on 200mm GaN-on-Si with Au-free technology

Denis Marcon, Marleen Van Hove, Brice De Jaeger, 2015, Photonics West - Optoelectronic Materials and Devices.

Record Breakdown Voltage (2200 V) of GaN DHFETs on Si With 2- $\mu\hbox{m}$ Buffer Thickness by Local Substrate Removal

Denis Marcon, Gustaaf Borghs, Marleen Van Hove, 2011, IEEE Electron Device Letters.

Correlation of interface states/border traps and threshold voltage shift on AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors

Guido Groeseneken, Jacopo Franco, Denis Marcon, 2015 .

High temperature behaviour of GaN-on-Si high power MISHEMT devices

Denis Marcon, Dirk Wellekens, Stefaan Decoutere, 2012, 2012 Proceedings of the European Solid-State Device Research Conference (ESSDERC).

Time-Dependent Breakdown Mechanisms and Reliability Improvement in Edge Terminated AlGaN/GaN Schottky Diodes Under HTRB Tests

Guido Groeseneken, Ben Kaczer, Denis Marcon, 2017, IEEE Electron Device Letters.

GaN-on-SOI: Monolithically Integrated All-GaN ICs for Power Conversion

S. Decoutere, D. Wellekens, B. Bakeroot, 2019, 2019 IEEE International Electron Devices Meeting (IEDM).

Trapping and reliability issues in GaN-based MIS HEMTs with partially recessed gate

Gaudenzio Meneghesso, Denis Marcon, Enrico Zanoni, 2016, Microelectron. Reliab..

Evaluation of Reliability and Lifetime of 650-V GaN-on-Si Power Devices Fabricated on 200-mm CMOS-Compatible Process Platform for High-Density Power Converter Application

S. Yin, D. Marcon, H. Chiu, 2022, 2022 IEEE 34th International Symposium on Power Semiconductor Devices and ICs (ISPSD).

The impact of the gate dielectric quality in developing Au-free D-mode and E-mode recessed gate AlGaN/GaN transistors on a 200mm Si substrate

Guido Groeseneken, Denis Marcon, Marleen Van Hove, 2015, 2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD).

Localization of off-stress-induced damage in AlGaN/GaN high electron mobility transistors by means of low frequency 1/f noise measurements

Denis Marcon, Martin Kuball, Michael J. Uren, 2013 .

Analysis of off-state leakage mechanisms in GaN-based MIS-HEMTs: Experimental data and numerical simulation

S. Decoutere, M. V. Hove, G. Verzellesi, 2015 .